NTMS4816N Power MOSFET 30 V, 11 A, N-Channel, SO-8 Features •Low RDS(on) to Minimize Conduction Losses •Low Capacitance to Minimize Driver Losses •Optimized Gate Charge to Minimize Switching Losses •This is a Pb-Free Device http://onsemi.com V(BR)DSS Applications •Disk Drives •DC-DC Converters •Printers RDS(ON) MAX ID MAX 10 mW @ 10 V 30 V 11 A 16 mW @ 4.5 V N-Channel MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Symbol Value Unit VDSS 30 V VGS ±20 V ID 9.0 A Continuous Drain Current RqJA (Note 1) Steady State TA = 25°C Power Dissipation RqJA (Note 1) Steady State TA = 25°C PD 1.37 W Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C ID 6.8 A TA = 70°C G 7.2 TA = 70°C TA = 25°C Power Dissipation RqJA (Note 2) D S MARKING DIAGRAM/ PIN ASSIGNMENT 5.4 PD 0.78 W 1 Continuous Drain Current RqJA, t v 10 s (Note 1) Steady State ID Power Dissipation RqJA, t v 10 s(Note 1) Steady State TA = 25°C PD 2.04 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 33 A TJ, Tstg -55 to 150 °C IS 2.7 A EAS 78 mJ 260 °C TA = 25°C TA = 70°C Operating Junction and Storage Temperature 8.8 Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 12.5 Apk, L = 1.0 mH, RG = 25 W) A 11 8 Drain Drain Drain Drain Top View 4816N = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL Device NTMS4816NR2G THERMAL RESISTANCE MAXIMUM RATINGS Parameter SO-8 CASE 751 STYLE 12 Source Source Source Gate 4816N AYWWG G 1 Symbol Value Unit Junction-to-Ambient – Steady State (Note 1) RqJA 91.5 °C/W Junction-to-Ambient – t v 10 s (Note 1) RqJA 61.3 Junction-to-Foot (Drain) RqJF 22.5 Junction-to-Ambient – Steady State (Note 2) RqJA 159.5 Package Shipping† SO-8 (Pb-Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surfacemounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2007 December, 2007 - Rev. 0 1 Publication Order Number: NTMS4816N/D NTMS4816N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS 26 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 100°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA Gate-to-Source Leakage Current V ±100 mA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance RDS(on) Forward Transconductance 1.5 3.0 6.0 gFS V mV/°C VGS = 10 V, ID = 9 A 8.2 10 mW VGS = 4.5 V, ID = 7.2 A 12.7 16 VDS = 1.5 V, ID = 9 A 26 S 1060 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 126 Total Gate Charge QG(TOT) 9.2 Threshold Gate Charge QG(TH) 2.4 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Total Gate Charge QG(TOT) VGS = 0 V, f = 1.0 MHz, VDS = 25 V VGS = 4.5 V, VDS = 15 V, ID = 9 A 220 nC 4.4 3.8 VGS = 10 V, VDS = 15 V, ID = 9 A 18.3 nC td(on) 8.0 ns tr 3.8 SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(off) VGS = 10 V, VDS = 15 V, ID = 1.0 A, RG = 6.0 W tf 21.6 8.0 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD VGS = 0 V, IS = 2.7 A TJ = 25°C 0.75 TJ = 125°C 0.55 tRR 20 Charge Time ta 9.0 Discharge Time tb Reverse Recovery Charge VGS = 0 V, dIS/dt = 100 A/ms, IS = 2.7 A QRR 1.0 V ns 11 9.0 nC PACKAGE PARASITIC VALUES LS TA = 25°C 0.66 nH Drain Inductance LD TA = 25°C 0.20 nH Gate Inductance LG TA = 25°C 1.5 nH Gate Resistance RG TA = 25°C 1.5 Source Inductance 3. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 2.3 W NTMS4816N TYPICAL PERFORMANCE CURVES 20 ID, DRAIN CURRENT (AMPS) 3.4 V 3.2 V 5 3.0 V 2.8 V 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 3.6 V 3.8 V 10 VDS ≥ 10 V 0 0.5 1.0 1.5 2.0 2.5 10 3.0 TJ = 25°C 1 2 TJ = -55°C 3 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C ID = 9 A 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0.02 0.015 VGS = 4.5 V 0.0125 0.01 0.0075 0.005 VGS = 10 V 0.0025 0 5 10 15 20 ID, DRAIN CURRENT (AMPS) Figure 4. On-Resistance vs. Drain Current and Gate Voltage 100000 1.6 1.5 TJ = 25°C 0.0175 Figure 3. On-Resistance vs. Gate-to-Source Voltage VGS = 0 V ID = 9 A VGS = 10 V 1.4 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TJ = 100°C 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0.050 0.005 15 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 15 20 TJ = 25°C 10V 6V 5V 4.5 V 4.2 V 4V 1.3 1.2 1.1 1.0 0.9 10000 TJ = 150°C 1000 TJ = 100°C 0.8 0.7 0.6 -50 100 -25 0 25 50 75 100 125 150 3 6 9 12 15 18 21 24 27 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTMS4816N TYPICAL PERFORMANCE CURVES VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TJ = 25°C Ciss C, CAPACITANCE (pF) 1200 VGS = 0 V 900 600 Coss 300 Crss 0 0 5 10 15 20 25 DRAIN-TO-SOURCE VOLTAGE (VOLTS) QT 9 VDS 8 7 12 6 5 8 3 4 2 ID = 9 A TJ = 25°C 1 0 0 30 4 0 20 4.5 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 1 A VGS = 10 V td(off) 100 t, TIME (ns) 16 8 12 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge 1000 tf tr td(on) 10 1 10 3.5 3 2.5 2 1.5 1 0.5 0.5 0.6 0.7 0.8 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 ms 1 ms 1 10 ms VGS = 20 V SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 dc 10 100 EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 10 0.01 0.1 VGS = 0 V TJ = 25°C RG, GATE RESISTANCE (OHMS) 10 ms 0.1 4 0 0.4 100 100 ID, DRAIN CURRENT (AMPS) QGD QGS 4 Figure 7. Capacitance Variation 1 16 VGS VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 20 10 1500 80 ID = 12.5 A 60 40 20 0 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 125 50 75 100 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 150 NTMS4816N PACKAGE DIMENSIONS SOIC-8 CASE 751-07 ISSUE AJ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. -XA 8 5 S B 0.25 (0.010) M Y M 1 4 K -YG C N X 45 _ DIM A B C D G H J K M N S SEATING PLANE -Z- 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S SOLDERING FOOTPRINT* INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN 1.52 0.060 7.0 0.275 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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