STMICROELECTRONICS 2STW4468

2STW4468
High power NPN epitaxial planar bipolar transistor
Features
■
High breakdown voltage VCEO = 140 V
■
Complementary to 2STW1695
■
Fast-switching speed
■
Typical ft = 20 MHz
■
Fully characterized at 125 oC
3
2
Applications
■
1
TO-247
Audio power amplifier
Description
Figure 1.
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity
audio frequency amplifier output stage.
Table 1.
Internal schematic diagram
Device summary
Order code
Marking
Package
Packaging
2STW4468
2STW4468
TO-247
Tube
October 2008
Rev 4
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www.st.com
9
2STW4468
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum rating
Symbol
Value
Unit
VCBO
Collector-base voltage (IE = 0)
200
V
VCEO
Collector-emitter voltage (IB = 0)
140
V
VEBO
Emitter-base voltage (IC = 0)
6
V
Collector current
10
A
ICM
Collector peak current (tP < 5 ms)
20
A
Ptot
Total dissipation at Tc = 25 °C
100
W
Tstg
Storage temperature
-65 to 150
°C
150
°C
Value
Unit
1.25
°C/W
IC
TJ
Table 3.
Symbol
Rthj-case
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Parameter
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction-case ____max
2STW4468
2
Electrical characteristics
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 200 V
0.1
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 6 V
0.1
µA
V(BR)CEO(1)
Collector-emitter
I = 50 mA
breakdown voltage (IB = 0) C
140
V
V(BR)CBO
Collector-base breakdown
IC = 100 µA
voltage (IE = 0)
200
V
6
V
V(BR)EBO (1)
Emitter-base breakdown
voltage (IC = 0)
IE = 1 mA
Collector-emitter
saturation voltage
IC = 5 A
IB = 500 mA
IC = 7 A
VBE
Base-emitter voltage
hFE
DC current gain
VCE(sat) (1)
fT
CCBO
IB = 700 mA
0.5
0.7
V
V
VCE = 5 V
IC = 5 A
1.3
V
IC = 3 A
VCE = 4 V
70
IC = 5 A
VCE = 4 V
50
Transition frequency
IC = 0.5 A
VCE = 12 V
20
MHz
Collector-base
capacitance
(IE = 0)
VCB = 10 V
f = 1 MHz
150
pF
Turn-on time
VCC = 60 V
IC = 5 A
0.22
µs
Storage time
IB1 = -IB2 = 0.5 A
4.3
µs
0.5
µs
140
Resistive Load
ton
tstg
tf
Fall time
1. Pulse duration = 300 µs, duty cycle ≤ 1.5 %
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2STW4468
Electrical characteristics
2.1
4/9
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Output characteristics
Figure 4.
DC current gain
Figure 5.
Collector-emitter saturation
voltage
Figure 6.
Base-emitter voltage
Figure 7.
Base-emitter voltage
2STW4468
2.2
Electrical characteristics
Test circuit
Figure 8.
Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
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Package mechanical data
3
2STW4468
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
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2STW4468
Package mechanical data
TO-247 Mechanical data
mm.
Dim.
A
Min.
4.85
Typ
Max.
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.45
L
14.20
L1
3.70
L2
4.30
18.50
øP
3.55
øR
4.50
S
14.80
3.65
5.50
5.50
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2STW4468
Revision history
4
Revision history
Table 5.
8/9
Document revision history
Date
Revision
Changes
23-Oct-2006
1
Initial release
09-Feb-2007
2
New graphics
20-Feb-2007
3
Document status promoted from preliminary data to datasheet.
13-Oct-2008
4
Content reworked to improve readability, no technical changes.
2STW4468
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