STB22NS25Z - STP22NS25Z N-channel 250V - 0.13Ω - 22A - TO-220 / D2PAK Zener-protected MESH OVERLAY™ Power MOSFET General features Type VDSS RDS(on) ID STB22NS25Z 250V <0.15Ω 22A STP22NS25Z 250V <0.15Ω 22A ■ 100% avalanche tested ■ Extremely high dv/dt capability 3 3 1 TO-220 2 1 D²PAK Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STB22NS25Z B22NS25Z D²PAK Tape & reel STP22NS25Z P22NS25Z TO-220 Tube June 2006 Rev 2 1/14 www.st.com 14 Contents STB22NS25Z - STP22NS25Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/14 .............................................. 8 STB22NS25Z - STP22NS25Z 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source voltage (VGS = 0) 250 V Drain-gate voltage (RGS = 20 kΩ) 250 V Gate- source voltage ± 20 V ID Drain current (continuos) at TC = 25°C 22 A ID Drain current (continuos) at TC = 100°C 13.9 A Drain current (pulsed) 88 A Total dissipation at TC = 25°C 135 W Derating factor 1.07 W/°C 2500 V 5 V/ns –55 to 150 °C Rthj-case Thermal resistance junction-case Max 0.93 °C/W Rthj-amb Thermal resistance junction-ambient Max 62.5 °C/W 300 °C IDM (1) PTOT VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) dv/dt (2) Tstg Tj Peak diode recovery voltage slope Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD < 22A, di/dt < 200A/µs, VDD = 80% V(BR)DSS Table 2. Tl Table 3. Symbol Thermal data Maximum lead temperature for soldering purpose Avalanche Characteristics Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 22 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V, Rg = 47Ω) 350 mJ 3/14 Electrical characteristics 2 STB22NS25Z - STP22NS25Z Electrical characteristics (Tcase =25°C unless otherwise specified) Table 4. Symbol On /off states Parameter Test conditions Typ. Max. Unit Drain-source breakdown voltage ID = 250µA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125°C 10 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ±18V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 3 4 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 11A 0.13 0.15 Ω V(BR)DSS Table 5. Symbol 250 2 V Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS > ID(on) x RDS(on)max, ID = 11A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge Min. Typ. Max. Unit 22 S VDS = 25V, f = 1MHz, VGS = 0 2400 340 120 pF pF pF VDD = 200V, ID = 20A, VGS = 10V (see Figure 13) 108 11 40 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 4/14 Min. 151 nC nC nC STB22NS25Z - STP22NS25Z Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr Turn-on delay time Rise time VDD = 125V, ID = 11A RG = 4.7Ω VGS = 10V (see Figure 12) 20 30 ns ns td(Voff) tf Turn-off- delay time Fall time VDD = 125V, ID = 11 A, RG = 4.7Ω, VGS = 10V (see Figure 12) 100 78 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time Vclamp = 200V, ID = 22 A, RG = 4.7Ω, VGS = 10V (see Figure 12) 37 65 110 ns ns ns Table 7. Symbol ISD Source drain diode Parameter Test conditions Min. Typ. Max. Unit Source-drain current 22 A ISDM (1) Source-drain current (pulsed) 88 A VSD (2) Forward on voltage ISD = 22 A, VGS = 0 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22 A, di/dt = 100A/µs VDD = 50V, Tj = 150°C (see Figure 17) trr Qrr IRRM 292 3065 21 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Table 8. Symbol BVGSO(1) Gate-source zener diode Parameter Gate-source breakdown voltage Test conditions Igs=± 500µA (open drain) Min Typ Max Unit 20 V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components 5/14 Electrical characteristics STB22NS25Z - STP22NS25Z 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/14 STB22NS25Z - STP22NS25Z Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/14 Test circuits 3 STB22NS25Z - STP22NS25Z Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/14 Figure 17. Switching time waveform STB22NS25Z - STP22NS25Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 Package mechanical data STB22NS25Z - STP22NS25Z TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 10/14 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STB22NS25Z - STP22NS25Z Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 10.4 0.393 D1 E 8 10 E1 0.315 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 R 0º 0.126 0.015 4º 3 V2 0.4 1 11/14 Packaging mechanical data 5 STB22NS25Z - STP22NS25Z Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 12/14 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB22NS25Z - STP22NS25Z 6 Revision history Revision history Table 9. Date Revision 06-Jun-2006 2 Changes New template 13/14 STB22NS25Z - STP22NS25Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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