TSD2118 Low Vcesat NPN Transistor TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 50V BVCEO 20V IC 5A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.35 @ IC / IB = 4A / 100mA (Typ.) Complementary part with TSB1412 Part No. TSD2118CP RO Structure ● ● 1V @ IC / IB = 4A / 100mA Package Packing TO-252 2.5Kpcs / 13” Reel Epitaxial Planar Type NPN Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO 20 6 V V Collector Current Collector Power Dissipation DC Pulse Ta=25ºC 5 10 (note 1) 1 (note 2) IC PD Tc=25ºC Operating Junction Temperature W 10 +150 TJ Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw≤380us, Duty≤2% 2. When mounted on a 40 x 40 x 0.7mm ceramic board. A TSTG o C o - 55 to +150 C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = 50uA, IE = 0 Conditions BVCBO 50 -- -- V Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 40V, IE = 0 BVCEO BVEBO ICBO 20 6 -- ---- --0.5 V V uA Emitter Cutoff Current Collector-Emitter Saturation Voltage VEB = 5V, IC = 0 IC / IB = 4A / 100mA IEBO *VCE(SAT) --- -0.35 0.5 1 uA V *hFE 120 -- 560 fT -- 150 -- MHz Cob -- 35 -- pF DC Current Transfer Ratio VCE = 2V, IC = 500mA VCE =6V, IC=50mA, Transition Frequency f=100MHz Output Capacitance VCB = 20V, f=1MHz * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% 1/4 Version: A07 TSD2118 Low Vcesat NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derating Curve 2/4 Version: A07 TSD2118 Low Vcesat NPN Transistor TO-252 Mechanical Drawing TO-252 DIMENSION DIM A A1 3/4 MILLIMETERS MIN MAX 2.3BSC 4.6BSC INCHES MIN MAX 0.09BSC 0.18BSC B 6.80 7.20 0.268 0.283 C 5.40 5.60 0.213 0.220 D 6.40 6.65 0.252 0.262 E 2.20 2.40 0.087 0.094 F 0.00 0.20 0.000 0.008 G 5.20 5.40 0.205 0.213 G1 0.75 0.85 0.030 0.033 G2 0.55 0.65 0.022 0.026 H 0.35 0.65 0.014 0.026 I 0.90 1.50 0.035 0.059 J 2.20 2.80 0.087 0.110 K 0.50 1.10 0.020 0.043 L 0.90 1.50 0.035 0.059 M 1.30 1.70 0.051 0.67 Version: A07 TSD2118 Low Vcesat NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A07