TSC5904 Low Vcesat NPN Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Base 2. Emitter 3. Collector BVCBO 80V BVCEO 60V IC 3A VCE(SAT) Features ● ● Ordering Information High Collector-Emitter BVCEO=60V High Collector Current IC =3A Part No. TSC5904CX RF Structure ● ● 0.60V @ IC / IB = 3 / 300mA Package Packing SOT-23 3Kpcs / 7” Reel Epitaxial Planar Type NPN Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Symbol Limit Unit VCBO VCEO VEBO IC Ptot TJ TSTG 80 60 5 3 500 +150 - 55 to +150 V V V A mW o C o C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage IC = 10uA, IE = 0 IC = 1mA, IB = 0 BVCBO BVCEO 80 60 --- --- V V Emitter-Base Breakdown Voltage Collector Cutoff Current IE = 10uA, IC = 0 VCB = 40V, IE = 0 BVEBO ICBO 5 -- --- -0.1 V uA Emitter Cutoff Current VEB = 4V, IC = 0 IC = 1A, IB = 100mA IC = 3A, IB = 300mA IEBO VCE(SAT) 1 VCE(SAT) 2 --- -0.12 0.43 0.1 0.3 0.6 uA IC = 1A, IB = 100mA VCE = 2V, IC = 1A VBE(SAT) VBE(ON) --- 0.9 0.8 1.25 1.0 V V VCE = 2V, IC = 50mA VCE = 2V, IC = 1A hFE 1 hFE 2 70 100 --- -300 VCE = 2V, IC = 3A VCE = 2V, IC = 500mA hFE 3 hFE 4 80 40 --- --- Transition Frequency Output Capacitance VCE = 5V, IC=-100mA VCB = 10V, f=1MHz fT Cob 140 -- -- -30 MHz pF Switching Times VCC= 10V, IC= 500mA, IB1=-IB2=50mA Ton Toff --- 45 800 --- nS nS Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter on Voltage DC Current Transfer Ratio 1/4 V Version: A08 TSC5904 Low Vcesat NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. VBE(SAT Figure 4. Power Derating 2/4 Version: A08 TSC5904 Low Vcesat NPN Transistor SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º Marking Diagram CF = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 3/4 Version: A08 TSC5904 Low Vcesat NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A08