PROCESS CP315V Power Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 40 x 40 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 8.7 MILS Emitter Bonding Pad Area 9.0 x 14 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 6,936 PRINCIPAL DEVICE TYPES CXT3150 CZT3150 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (5- January 2006)