Central CQ39BS CQ39DS CQ39MS CQ39NS TM Semiconductor Corp. TRIAC 4.0 AMP, 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ39BS series type is a hermetically sealed silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQ39BS CQ39DS CQ39MS CQ39NS 200 400 Peak Repetitive Off-State Voltage VDRM RMS On-State Current (TC=80°C) IT(RMS) 4.0 A Peak One Cycle Surge (t=10ms) ITSM 35 A I2t Value for Fusing (t=10ms) I 2t 2.0 A2 s Peak Gate Power (tp=10µs) PGM PG (AV) 3.0 W Average Gate Power Dissipation 0.2 W Peak Gate Current (tp=10µs) IGM 1.2 A Storage Temperature Tstg -40 to +150 °C Junction Temperature TJ -40 to +125 °C Thermal Resistance ΘJA 160 °C/W Thermal Resistance ΘJC 9.0 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN 600 UNITS TYP 800 V MAX UNITS IDRM Rated VDRM, RGK=1KΩ 10 µA IDRM Rated VDRM, RGK=1KΩ, TC=125°C 200 µA IGT VD=12V, QUAD I, II, III 2.5 5.0 mA IGT VD=12V, QUAD IV 5.5 9.0 mA IH RGK=1KΩ 1.6 5.0 mA VGT VD=12V, QUAD I, II, III, IV 2.0 V VTM ITM=6.0A, tp=380µs 1.75 V dv/dt VD=2 /3 VDRM, TC=125°C 11 V/µs R1 (18-August 2004) Central TM CQ39BS CQ39DS CQ39MS CQ39NS Semiconductor Corp. TRIAC 4.0 AMP, 200 THRU 800 VOLTS TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) GATE 3) MT2 MARKING CODE: FULL PART NUMBER DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A (DIA) 0.335 0.370 8.51 9.40 B (DIA) 0.315 0.335 8.00 8.51 C 0.040 1.02 D 0.240 0.260 6.10 6.60 E 0.500 12.70 F (DIA) 0.016 0.021 0.41 0.53 G (DIA) 0.200 5.08 H 0.100 2.54 I 0.028 0.034 0.71 0.86 J 0.029 0.045 0.74 1.14 TO-39 (REV: R1) R1 (18-August 2004)