MSQA6V1W5T2 Quad Array for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium. http://onsemi.com 1 5 2 Features 3 • SC−88A Package Allows Four Separate Unidirectional • • • • • Configurations Low Leakage < 1 mA @ 3 V Breakdown Voltage: 6.1 V − 7.2 V @ 1 mA Low Capacitance (90 pF typical) ESD Protection Meeting IEC1000−4−2 Pb−Free Package is Available* SC−88A/SOT−323 CASE 419A Mechanical Characteristics: • • • • 4 Void Free, Transfer−Molded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit 150 W PD 385 mW Thermal Resistance, Junction−to−Ambient Above 25°C, Derate RqJA 325 3.1 °C/W mW/°C Maximum Junction Temperature TJmax 150 °C Operating Junction and Storage Temperature Range TJ Tstg −55 to +150 °C Peak Power Dissipation @ 20 ms @TA ≤ 25°C (Note 1) Ppk Steady State Power − 1 Diode (Note 2) ESD Discharge MIL STD 883C − Method 3015−6 IEC1000−4−2, Air Discharge IEC1000−4−2, Contact Discharge Lead Solder Temperature (10 s duration) VPP ORDERING INFORMATION °C 260 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Non−repetitive current per Figure 1. Derate per Figure 2. 2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR−4 board with min pad. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 4 61 = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) kV 16 16 9 TL 61 M G G 1 Device Package Shipping † MSQA6V1W5T2 SC−88A 3000/Tape & Reel SC−88A (Pb−Free) 3000/Tape & Reel MSQA6V1W5T2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *T2 Suffix Devices are Packaged with Pin 1 Opposing Sprocket Hole. Publication Order Number: MSQA6V1W5T2/D MSQA6V1W5T2 ELECTRICAL CHARACTERISTICS Breakdown Voltage VBR @ 1 mA (Volts) Device MSQA6V1W5 Min Nom Max Leakage Current IRM @ VRWM = 3 V (mA) 6.1 6.6 7.2 1.0 100 tr 90 % OF PEAK PULSE CURRENT Ppk , PEAK SURGE POWER (WATTS) 1000 100 10 NOTE: Non−Repetitive Surge. Capacitance @ 0 V Bias (pF) Max VF @ IF = 200 mA (V) 90 1.25 PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 1 1 10 100 0 1000 t, TIME (ms) 0 90 80 80 TYPICAL CAPACITANCE (pF) 1 MHz FREQUENCY PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25 ° C 100 90 70 60 50 40 30 20 10 25 50 75 100 60 80 Figure 2. 8 x 20 ms Pulse Waveform 100 0 40 t, TIME (ms) Figure 1. Pulse Width 0 20 125 150 175 200 70 60 50 40 30 20 10 0 0 TA, AMBIENT TEMPERATURE (°C) 1.0 2.0 3.0 BIAS VOLTAGE (VOLTS) Figure 3. Pulse Derating Curve Figure 4. Capacitance http://onsemi.com 2 4.0 5.0 MSQA6V1W5T2 Ipp, PEAK PULSE CURRENT (AMPS) 100 0.1 0.01 0.001 0.6 0.7 0.8 1.0 0.9 1.1 10 2.5 ms SQUARE WAVE 1.0 1.2 0 5.0 10 15 20 25 VF, FORWARD VOLTAGE (VOLTS) VC, CLAMPING VOLTAGE (VOLTS) Figure 5. Forward Voltage Figure 6. Clamping Voltage versus Peak Pulse Current (Reverse Direction) Ipp, PEAK FORWARD PULSE CURRENT (AMPS) IF , FORWARD CURRENT (A) 1.0 100 10 1.0 2.5 ms SQUARE WAVE 0.1 0 2.0 4.0 6.0 8.0 10 VC, FORWARD CLAMPING VOLTAGE (VOLTS) Figure 7. Clamping Voltage versus Peak Pulse Current (Forward Direction) http://onsemi.com 3 12 30 MSQA6V1W5T2 PACKAGE DIMENSIONS SC−88A / SOT−353 / SC−70 CASE 419A−02 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) M B M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J C H K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 4 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MSQA6V1W5T2/D