MCH6629 Ordering number : EN8239A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6629 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High ESD voltage (TYP 300V) [Built-in one side diode for protection between Gate-to-Source]. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage (*1) VGSS --10 V ID --0.4 A Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation IDP PD PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit --1.6 A 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C (*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source. Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS Conditions ID=--1mA, VGS=0V VDS=--30V, VGS=0V Ratings min typ Unit max --30 VGS=--8V, VDS=0V VDS=--10V, ID=--100µA --0.4 VDS=--10V, ID=--0.2A 0.25 V --1 µA --1 µA --1.4 V 1.9 Ω Ω Forward Transfer Admittance VGS(off) yfs ID=--0.2A, VGS=--4V ID=--0.1A, VGS=--2.5V 1.5 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 2.0 2.8 ID=--10mA, VGS=--1.5V VDS=--10V, f=1MHz 4.0 8.0 Input Capacitance RDS(on)3 Ciss 0.42 S 40 Ω pF Output Capacitance Coss VDS=--10V, f=1MHz 8 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 4.5 pF Marking : YL Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1306 TI IM TC-00000383 / 22805PE TS IM TB-00001232 No.8239-1/5 MCH6629 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr td(off) See specified Test Circuit. 5 ns See specified Test Circuit. 10 ns tf See specified Test Circuit. 5 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg nC Qgs VDS=--10V, VGS=--4V, ID=--0.4A VDS=--10V, VGS=--4V, ID=--0.4A 0.83 Gate-to-Source Charge 0.25 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--0.4A 0.17 Diode Forward Voltage VSD IS=--0.4A, VGS=0V --1.0 Package Dimensions 0.25 6 5 4 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Top view 3 0.65 0.3 0.85 0.07 5 4 2.1 1.6 0.25 2 6 0.15 0 to 0.02 1 V Electrical Connection unit : mm (typ) 7022A-006 2.0 nC --1.5 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 6 5 4 SANYO : MCPH6 Switching Time Test Circuit VDD= --15V VIN 0V --4V ID= --0.2A RL=75Ω VOUT VIN D PW=10µs D.C.≤1% G P.G MCH6629 50Ω S No.8239-2/5 MCH6629 ID -- VDS --0.45 --0.40 --0.15 Drain Current, ID -- A Drain Current, ID -- A --0.20 Ta= --25 °C 75° C 25° C V --3. 5 V --2.0 --6. --4.5V 0V --4. 0V --0.25 ID -- VGS --0.50 --3 .0V --2 .5 V --0.30 --0.35 VDS= --10V --0.30 --0.25 VGS= --1.5V --0.20 --0.10 25° C --0.10 --0.05 Ta= 75 ° C --25 °C --0.15 --0.05 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 0 --1.0 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 5.0 --0.5 IT07653 --3.5 IT07654 RDS(on) -- Ta 4.0 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 3.0 --0.1A 2.5 2.0 1.5 1.0 0.5 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V 0.1 °C 25 7 1.5 1.0 0.5 --40 --20 5 3 0 20 40 60 80 100 120 140 IT09248 IS -- VSD --1.0 7 5 Source Current, IS -- A Forward Transfer Admittance, yfs -- S C 5° --2 = °C Ta 75 2 V = --4.0 A, V GS Ambient Temperature, Ta -- °C 5 3 = --2 VGS .1A, 0.2 I D= -- IT09247 VDS= --10V 7 --0 I D= 2.0 0 --60 --10 yfs -- ID 1.0 VGS=0V 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 2 0.01 --0.001 2 3 5 7 --0.01 2 3 5 7 --0.1 2 3 Drain Current, ID -- A 5 7 --1.0 IT07657 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V SW Time -- ID --1.4 IT09249 Ciss, Coss, Crss -- VDS 60 VDS= --15V VGS= --4V 2 50 td(on) 10 td (off) 7 tr 5 tf Ciss 40 30 20 10 3 2 --0.1 --0.001 --0.2 Ciss, Coss, Crss -- pF 3 Switching Time, SW Time -- ns --9 .5V 2.5 °C 0 3.0 --25°C ID= --0.2A 3.5 3.5 25°C 4.0 Ta=7 5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 4.5 Coss Crss 0 2 3 Drain Current, ID -- A 5 7 IT09250 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT08163 No.8239-3/5 MCH6629 VGS -- Qg --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Total Gate Charge, Qg -- nC --25°C 1.0 7 2 3 5 7 2 --0.1 3 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25°C 1.0 2 3 5 7 2 --0.1 3 5 Drain Current, ID -- A s 1m --1.0 7 ID= --0.4A --1.0 IT08165 PW≤10µs 10 0µ s 10 3 DC 2 10 m 0m op s s er --0.1 ati on Operation in this area is limited by RDS(on). 7 5 3 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 Ta=75°C --25°C 25°C 3 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 5 7 5 IT09252 3 5 7 --1.0 IT08166 PD -- Ta 0.8 M ou nt ed on a 0.6 0.4 ce ra m ic bo ar d 0.2 0 3 2 --0.1 Drain Current, ID -- A 1.0 IDP= --1.6A 7 --1.0 IT08164 RDS(on) -- ID 2 --0.01 7 ASO 3 5 Drain Current, ID -- A Allowable Power Dissipation, PD -- W Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25°C VGS= --1.5V --25°C 7 --0.01 Drain Current, ID -- A Ta=75°C 7 Ta=75°C 2 2 VGS= --2.5V 2 5 3 IT09251 3 2 VGS= --4V 5 --0.01 0.9 RDS(on) -- ID 5 RDS(on) -- ID 5 VDS= --10V ID= --0.4A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Gate-to-Source Voltage, VGS -- V --4.0 0 20 40 60 80 (9 00 m m2 ✕0 .8m m )1 un it 100 120 Ambient Temperature, Ta -- °C 140 160 IT09253 No.8239-4/5 MCH6629 Note on usage : Since the MCH6629 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. PS No.8239-5/5