SCH2815 Ordering number : ENA0369 SANYO Semiconductors DATA SHEET SCH2815 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a Schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • 1.5V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage (*1) Drain Current (DC) VDSS VGSS 30 10 V V ID 0.7 A Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 2.8 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C VRRM VRSM 15 V 15 V Average Output Current IO 150 mA Surge Forward Current IFSM [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 2 A Junction Temperature Tj 50Hz sine wave, 1 cycle --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : QQ (*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91306PE MS IM TC-00000165 No. A0369-1/6 SCH2815 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=8V, VDS=0V VDS=10V, ID=100µA 0.4 Forward Transfer Admittance yfs RDS(on)1 VDS=10V, ID=350mA 0.45 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Cutoff Voltage ID=350mA, VGS=4V ID=200mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V, f=1MHz VDS=10V, f=1MHz Turn-ON Delay Time td(on) Rise Time tr td(off) Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge 30 V 1 µA 1 µA 1.3 0.8 V S 0.7 0.9 Ω 0.8 1.15 Ω 1.6 2.4 30 Ω pF 7 pF 3.5 pF See specified Test Circuit. 8 ns See specified Test Circuit. 6 ns See specified Test Circuit. 10 ns See specified Test Circuit. 8 ns VDS=10V, VGS=4V, ID=0.7A 1 nC 0.4 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=0.7A VDS=10V, VGS=4V, ID=0.7A Diode Forward Voltage VSD IS=0.7A, VGS=0V VR VF 1 IR=0.5mA IF=100mA VF 2 Interterminal Capacitance IR C IF=150mA VR=6V VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=10mA, See specified Test Circuit. 0.2 nC 0.93 1.2 V 0.32 0.35 V 0.35 0.40 V 45 µA [SBD] Reverse Voltage Forward Voltage Reverse Current Package Dimensions 15 V 9 pF 10 ns Electrical Connection unit : mm (typ) 7028-003 6 5 4 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain 1 2 3 Top view 1.6 0.2 1.5 2 3 0.5 0.56 1 0.25 0.05 1.6 0.05 0.2 6 5 4 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6 No. A0369-2/6 SCH2815 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD=15V VIN Duty≤10% ID=350mA RL=42Ω D 50Ω VOUT PW=10µs D.C.≤1% 100Ω 10Ω 10mA VIN 1mA 10mA 4V 0V 10µs G --5V trr SCH2815 50Ω S ID -- VGS C Ta= --25 ° V 25° C 5°C --25 °C 0.4 0.2 25° C 0.1 0.6 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 0 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 3.0 350mA 2.0 ID=200mA 1.0 0 2.0 3.0 4.0 5.0 6.0 Gate-to-Source Voltage, VGS -- V 7.0 8.0 IT10876 1.5 2.0 2.5 3.0 3.5 IT07511 RDS(on) -- Ta 1.6 4.0 1.0 1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 0 0.5 IT07510 RDS(on) -- VGS 5.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω VDS=10V Ta= 7 VGS=1.5V 0.2 Drain Current, ID -- A 0.3 2.0 V 2.5 4. 6.0V 0V 3.5V Drain Current, ID -- A 3.0 V 0.8 C ID -- VDS 0.4 75° P.G 1.4 1.2 =2.5V VGS mA, 0 0 2 I D= 4.0V V S= 0mA, G 5 3 = ID 1.0 0.8 0.6 0.4 0.2 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 IT10877 No. A0369-3/6 SCH2815 yfs -- ID 1.0 2 25 °C 0.1 7 5 3 0.1 2 7 2 3 5 7 2 0.1 3 5 0.01 0.2 7 1.0 IT07514 td(on) tf 7 tr 5 0.8 1.0 1.2 1.4 IT07515 f=1MHz 7 5 Ciss, Coss, Crss -- pF td(off) 10 0.6 Ciss, Coss, Crss -- VDS 100 VDD=15V VGS=4V 2 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 3 Switching Time, SW Time -- ns 2 C °C 75 3 3 --25° Ta= 5 5°C 5 °C --25 Ta= 7 7 7 25°C 1.0 Drain Current, ID -- A 3 Ciss 3 2 10 Coss 7 Crss 5 3 2 2 0.1 1.0 2 5 3 7 Drain Current, ID -- A 0 1.0 IT07516 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2.5 2.0 1.5 1.0 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Total Gate Charge, Qg -- nC 25 30 IT08960 RDS(on) -- ID Ta=75°C 25°C --25°C 7 5 3 5 7 0.1 2 Drain Current, ID -- A 3 Ta=75°C 25°C --25°C 7 5 2 3 5 7 1.0 IT07520 5 7 2 0.1 Drain Current, ID -- A 3 5 7 1.0 IT07519 RDS(on) -- ID 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2 1.0 1.0 IT10878 VGS=2.5V 2 20 2 3 0.01 1.0 RDS(on) -- ID 3 3 0.01 15 VGS=4V 3.0 0 10 3 VDS=10V ID=0.7A 3.5 5 Drain-to-Source Voltage, VDS -- V VGS -- Qg 4.0 Gate-to-Source Voltage, VGS -- V VGS=0V 2 2 5 0.01 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω IS -- VSD 3 VDS=10V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 3 VGS=1.5V 5 3 Ta=75°C 2 --25°C 25°C 1.0 7 5 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 IT07521 No. A0369-4/6 SCH2815 ASO 5 [MOSFET] 3 10 Drain Current, ID -- A 2 1.0 10 ID=0.7A 7 5 ms DC 3 0m op s er ati on Operation in this area is limited by RDS(on). 7 5 s 10 2 0.1 0µ s 1m (T a= 25 °C ) 3 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 2 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 ic bo ard (9 00 mm 0.2 2 ✕0 .8 mm )1 un it 20 40 60 80 100 120 140 160 IT10880 IR -- VR Ta=125°C 100°C 1000 7 5 3 2 75°C 100 7 5 3 2 50°C 25°C 10 7 5 3 2 1.0 0 0.1 0.2 0.3 0.5 0.4 Forward Voltage, VF -- V 0 0.6 (1) (2) (4) (3) 360° Sine wave 0.3 180° 360° (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.1 0 0 0.1 0.2 8 10 12 14 16 IT06809 C -- VR f=1MHz θ 0.2 6 5 Rectangular wave 0.4 4 Reverse Voltage, VR -- V PF(AV) -- IO 0.5 2 IT06808 Interterminal Capacitance, C -- pF Average Forward Power Dissipation, PF(AV) -- W ce ram 0.4 Ambient Temperature, Ta -- °C 3 2 0.3 0.4 0.5 0.6 Average Output Current, IO -- A 0.7 IT06810 3 2 10 7 5 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 IT06811 IFSM -- t 2.8 Surge Forward Current, IFSM(Peak) -- A na 0 Reverse Current, IR -- µA 5°C 12 Ta = 1.0 7 5 do 10000 7 5 3 2 100 ° 75° C 50° C C 25° C Forward Current, IF -- mA 3 2 nte IT10879 100 7 5 10 7 5 M ou 0.6 5 3 2 3 2 [MOSFET] 0 IF -- VF 7 5 PD -- Ta 0.8 Allowable Power Dissipation, PD -- W ≤10µs IDP=2.8A Current waveform 50Hz sine wave 2.4 IS 20ms t 2.0 1.6 1.2 0.8 0.4 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ID00268 No. A0369-5/6 SCH2815 Note on usage : Since the SCH2815 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2006. Specifications and information herein are subject to change without notice. PS No. A0369-6/6