SEMIKRON SKM300GB174D

SKM 300GB174D
Absolute Maximum Ratings
Symbol Conditions
IGBT
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38
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SEMITRANSTM 3
Low Loss IGBT Modules
SKM 300GB174D
Preliminary Data
Features
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Characteristics
Symbol Conditions
IGBT
38
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Units
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Inverse diode
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Thermal characteristics
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Mechanical data
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1
08-12-2005 SCT
© by SEMIKRON
SKM 300GB174D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
2
08-12-2005 SCT
© by SEMIKRON
SKM 300GB174D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
08-12-2005 SCT
© by SEMIKRON
SKM 300GB174D
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
File no. E 63 532
Dimensions in mm
)
, 1D
)
, 1D
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
08-12-2005 SCT
© by SEMIKRON