SKM 75GB063D
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Symbol Conditions
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Superfast NPT-IGBT
Modules
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Characteristics
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18-06-2007 SCT
© by SEMIKRON
SKM 75GB063D
Characteristics
Symbol Conditions
Inverse Diode
(* 8 (')
SEMITRANS® 2
* 8 >9 -D (' 8 0 (
min.
typ.
max.
Units
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,&
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Superfast NPT-IGBT
Modules
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Features
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Typical Applications
% ! !
2
,
% , 3
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4
5 /06"7
GB
2
GAL
GAR
18-06-2007 SCT
© by SEMIKRON
SKM 75GB063D
®
SEMITRANS 2
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
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?
8/
81
8C
8I
8/
81
8C
190
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00//
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63P
63P
8I
00001
Zth(j-c)D
Superfast NPT-IGBT
Modules
SKM 75GB063D
SKM 75GAR063D
SKM 75GAL063D
Features
!
!
" #$ %
% & ! '
& &
%%& % ()'
(
$ )
)
)
%
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)- !!
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$ ! !
/0 !
!
10 Typical Applications
% ! !
2
,
% , 3
-) ! %
4
5 /06"7
GB
3
GAL
GAR
18-06-2007 SCT
© by SEMIKRON
SKM 75GB063D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
18-06-2007 SCT
© by SEMIKRON
SKM 75GB063D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic, inclusive RCC'+ EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
5
18-06-2007 SCT
© by SEMIKRON
SKM 75GB063D
UL recognized
File no. E 63 532
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6
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18-06-2007 SCT
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. =C S . =/
© by SEMIKRON