STMICROELECTRONICS STTH60L06W

STTH60L06
®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Table 1: Main Product Characteristics
IF(AV)
60 A
VRRM
600 V
Tj
175°C
VF (typ)
0.95 V
trr (max)
70 ns
A
K
DO-247
STTH60L06W
FEATURES AND BENEFITS
■
■
■
■
Ultrafast switching
Low reverse current
Low thermal resistance
Reduces switching & conduction losses
DESCRIPTION
The STTH60L06, which is using ST Turbo 2 600V
technology, is specially suited for use in switching
power supplies, and industrial applications, as
rectification and discontinuous mode PFC boost
diode. Thanks to its low VF characteristics, this
device exhibits high performances in freewheeling applications.
Table 2: Order Codes
Part Number
STTH60L06W
Marking
STTH60L06W
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS)
RMS forward voltage
Value
Unit
600
V
90
A
IF(AV)
Average forward current
Tc = 110°C
δ = 0.5
60
A
IFSM
Surge non repetitive forward current
tp = 10ms sinusoidal
400
A
Tstg
Storage temperature range
-65 to + 175
°C
175
°C
Tj
Maximum operating junction temperature
September 2004
REV. 2
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STTH60L06
Table 4: Thermal Resistance
Symbol
Rth(j-c)
Parameter
Value (max).
Unit
0.75
°C/W
Junction to case
Table 5: Static Electrical Characteristics
Symbol
IR *
Parameter
Test conditions
Reverse leakage current Tj = 25°C
Min.
Typ
VR = VRRM
Tj = 150°C
VF **
Forward voltage drop
Tj = 25°C
160
IF = 60A
Unit
50
µA
1600
1.55
Tj = 150°C
Pulse test:
Max.
0.95
V
1.2
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
2
To evaluate the conduction losses use the following equation: P = 0.93 x IF(AV) + 0.0045 IF (RMS)
Table 6: Dynamic Characteristics
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
trr
Reverse recovery
time
Tj = 25°C
IRM
Reverse recovery
current
Tj = 125°C IF = 60A
VR = 400V
dIF/dt = 100 A/µs
tfr
Forward recovery
time
Tj = 25°C
IF = 60A
dIF/dt = 200 A/µs
VFR = 1.1 x VFmax
VFP
Forward recovery
voltage
Tj = 25°C
IF = 60A dIF/dt = 200 A/µs
VFR = 1.1 x VFmax
IF = 0.5A Irr = 0.25A IR =1A
70
IF = 1A dIF/dt = 50 A/µs VR =30V
Figure 1: Conduction losses versus average
forward current
ns
75
105
14
19
A
500
ns
3
V
Figure 2: Forward voltage drop versus forward
current
IFM(A)
P(W)
200
140
δ = 0.5
120
180
δ = 0.2
Tj=150°C
(maximum values)
160
δ = 0.1
100
140
δ = 0.05
δ=1
80
120
Tj=150°C
(typical values)
100
60
80
40
Tj=25°C
(maximum values)
60
T
40
20
δ=tp/T
IF(AV)(A)
20
tp
0
0
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VFM(V)
0
10
20
30
40
50
60
70
80
90
100
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
STTH60L06
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 4: Peak reverse recovery current versus
dIF/dt (typical values)
IRM(A)
Zth(j-c)/Rth(j-c)
1.0
55
0.9
50
VR=400V
Tj=125°C
IF=2 x IF(AV)
45
0.8
40
0.7
IF=IF(AV)
35
0.6
IF=0.5 x IF(AV)
30
0.5
25
0.4
20
0.3
15
0.2
10
Single pulse
0.1
5
tp(s)
0.0
dIF/dt(A/µs)
0
1.E-03
1.E-02
1.E-01
1.E+00
Figure 5: Reverse recovery time versus dIF/dt
(typical values)
0
50
100
150
200
250
300
350
400
450
500
Figure 6: Reverse recovery charges versus
dIF/dt (typical values)
trr(ns)
Qrr(µC)
1000
4.5
VR=400V
Tj=125°C
900
VR=400V
Tj=125°C
4.0
IF=2 x IF(AV)
800
3.5
700
3.0
IF=2 x IF(AV)
600
IF=IF(AV)
2.5
500
IF=IF(AV)
2.0
IF=0.5 x IF(AV)
400
IF=0.5 x IF(AV)
1.5
300
1.0
200
0.5
100
dIF/dt(A/µs)
dIF/dt(A/µs)
0.0
0
0
50
100
150
200
250
300
350
400
450
0
500
Figure 7: Reverse recovery softness factor
versus dIF/dt (typical values)
100
200
300
400
500
Figure 8: Relative variations of dynamic
parameters versus junction temperature
S factor
1.6
1.4
IF< 2 x IF(AV)
VR=400V
Tj=125°C
1.4
S factor
1.2
1.2
1.0
1.0
0.8
0.8
QRR
0.6
0.6
IF=IF(AV)
VR=400V
Reference: Tj=125°C
trr
IRM
0.4
0.4
0.2
0.2
Tj(°C)
dIF/dt(A/µs)
0.0
0.0
0
50
100
150
200
250
300
350
400
450
500
25
50
75
100
125
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STTH60L06
Figure 9: Transient peak forward voltage
versus dIF/dt (typical values)
Figure 10: Forward recovery time versus dIF/dt
(typical values)
tfr(ns)
VFP(V)
400
8
IF=IF(AV)
Tj=125°C
7
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
350
6
300
5
250
4
200
3
150
2
100
1
50
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
0
50
100
150
200
250
300
350
400
450
500
Figure 11: Junction capacitance versus
reverse voltage applied (typical values)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
VR(V)
10
1
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10
100
1000
0
100
200
300
400
500
STTH60L06
Figure 12: DO-247 Package Mechanical Data
DIMENSIONS
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A
4.85
5.15 0.191
0.203
D
2.20
2.60 0.086
0.102
E
0.40
0.80 0.015
0.031
F
1.00
1.40 0.039
0.055
F2
2.00
0.078
F3 2.00
2.40 0.078
0.094
G
10.90
0.429
H 15.45
15.75 0.608
0.620
L 19.85
20.15 0.781
0.793
L1 3.70
4.30 0.145
0.169
L2
18.50
0.728
L3 14.20
14.80 0.559
0.582
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00 0.078
0.118
V
5°
5°
V2
60°
60°
Dia. 3.55
3.65 0.139
0.143
REF.
V
Dia.
V
A
H
L5
L
L2 L4
F2
L3
L1
F3
D
V2
F
M
G
E
Table 7: Ordering Information
Ordering type
STTH60L06W
■
■
■
■
Marking
STTH60L06W
Package
DO-247
Weight
4.40 g
Base qty
30
Delivery mode
Tube
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 m.N.
Maximum torque value: 1.0 m.N.
Table 8: Revision History
Date
07-Sep-2004
10-Sep-2004
Revision
1
2
Description of Changes
First issue
Junction to case value (page 2) changed from 0.70 °C/W
to 0.75°C/W
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STTH60L06
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners
© 2004 STMicroelectronics - All rights reserved
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