STTH20004TV1 ® Ultrafast high voltage rectifier Table 1: Main product characteristics IF(AV) Up to 2 x 120 A VRRM 400 V Tj (max) 150°C VF (typ) 0.83 V trr (max) 60 ns A1 K1 A2 K2 K1 A1 K2 Features and benefits ■ ■ ■ ■ A2 Ultrafast switching Low reverse current Low thermal resistance Reduces switching & conduction losses ISOTOP STTH20004TV1 Description The STTH20004TV1 uses ST new 400V technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode. Table 2: Order codes Part number STTH20004TV1 Marking STTH20004TV1 Table 3: Absolute ratings (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) Parameter Value Unit Repetitive peak reverse voltage 400 V RMS forward current 200 A A Average forward current Tc = 90 °C δ = 0.5 Per diode 100 Tc = 73 °C δ = 0.5 Per diode 120 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range Tj Maximum operating junction temperature October 2005 REV. 1 900 A -55 to + 150 °C 150 °C 1/6 STTH20004TV Table 4: Thermal resistance Symbol Rth(j-c) Rth(c) Parameter Junction to case Value (max). Unit Per diode 0.50 °C/W Total 0.30 Coupling 0.10 °C/W When diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 5: Static electrical characteristics (per diode) Symbol IR * Parameter Test conditions Reverse leakage current Tj = 25 °C Min. VR = VRRM Tj = 125 °C VF ** Forward voltage drop Tj = 25 °C 100 IF = 100 A Max. Unit 100 µA 1000 1.2 Tj = 150 °C Pulse test: Typ 0.83 V 1.0 * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% 2 To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.002 IF (RMS) Table 6: Dynamic characteristics (per diode) Symbol trr IRM Sfactor 2/6 Parameter Test conditions Reverse recovery Tj = 25 °C time Min Typ Max Unit IF = 1 A dIF/dt = 50 A/µs VR = 30 V 75 100 IF = 1 A dIF/dt = 200 A/µs VR = 30 V 45 60 Reverse recovery Tj = 125 °C IF = 100 A VR = 200 V current dIF/dt = 100 A/µs Softness factor Tj = 125 °C IF = 100 A VR = 200 V dIF/dt = 100 A/µs tfr Forward recovery Tj = 25 °C time IF = 100 A dIF/dt = 200 A/µs VFR = 1.1 x VFmax VFP Forward recovery Tj = 25 °C voltage IF = 100 A dIF/dt = 200 A/µs VFR = 1.1 x VFmax ns 18 A 800 ns 0.4 2.6 V STTH20004TV Figure 1: Conduction losses versus average forward current (per diode) Figure 2: Forward voltage drop versus forward current (per diode) I FM (A) P(W) 200 180 δ=1 δ=0.5 160 180 δ=0.2 140 160 δ=0.1 Tj=150°C (Maximum values) 140 δ=0.05 120 120 100 100 80 Tj=150°C (Typical values) 80 60 60 T 40 20 δ=tp/T I F(AV) (A) 0 0 10 20 30 40 50 60 70 80 40 20 tp 0 0.0 90 100 110 120 130 140 150 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration 0.6 0.8 1.0 1.2 1.4 IF=IF(AV) VR=200V Tj=125°C 45 0.8 40 0.7 35 0.6 30 0.5 25 0.4 20 0.3 15 0.2 0.4 IRM (A) 50 Single pulse 0.2 Figure 4: Peak reverse recovery current versus dIF/dt (typical values, per diode) Zth(j-c) /Rth( j-c) 1.0 0.9 Tj=25°C (Maximum values) VFM (V) 10 0.1 5 t P (s) 0.0 1.E-03 dIF/dt(A/µs) 0 1.E-02 1.E-01 1.E+00 1.E+01 Figure 5: Reverse recovery time versus dIF/dt (typical values, per diode) 0 50 100 150 200 250 300 350 400 450 500 Figure 6: Reverse recovery charges versus dIF/dt (typical values, per diode) t rr (ns) Q rr (nC) 300 3500 IF=IF(AV) VR=200V Tj=125°C 250 IF=IF(AV) VR=200V Tj=125°C 3000 2500 200 2000 150 1500 100 1000 50 500 dIF/dt(A/µs) 0 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 3/6 STTH20004TV Figure 7: Reverse recovery softness factor versus dIF/dt (typical values, per diode) 0.8 S FACTOR Figure 8: Relative variations of dynamic parameters versus junction temperature 1.6 SFACTOR 1.4 IF < 2 x IF(AV) VR=200V Tj=125°C 0.7 1.2 0.6 1.0 0.5 0.8 0.4 tRR 0.6 0.3 IRM 0.4 0.2 QRR 0.2 0.1 0.0 dIF/dt(A/µs) 0.0 0 50 100 150 200 250 300 25 350 400 450 50 75 100 125 500 Figure 9: Transient peak forward voltage versus dIF/dt (typical values, per diode) 6.0 IF=IF(AV) VR=200V Reference: Tj=125°C Tj (°C) Figure 10: Forward recovery time versus dIF/dt (typical values, per diode) t fr (ns) VFP (V) 1800 IF=IF(AV) Tj=125°C 5.5 5.0 IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 1600 4.5 1400 4.0 1200 3.5 1000 3.0 2.5 800 2.0 600 1.5 400 1.0 dIF/dt(A/µs) 0.5 200 0.0 0 50 100 150 200 250 300 350 400 450 500 Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 10000 F=1MHz VOSC=30mVRMS Tj=25°C 1000 VR(V) 100 1 4/6 10 100 1000 dIF /dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 STTH20004TV Figure 12: ISOTOP Package mechanical data REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S DIMENSIONS Millimeters Inches Min. Max. Min. Max. 11.80 12.20 0.465 0.480 8.90 9.10 0.350 0.358 7.8 8.20 0.307 0.323 0.75 0.85 0.030 0.033 1.95 2.05 0.077 0.081 37.80 38.20 1.488 1.504 31.50 31.70 1.240 1.248 25.15 25.50 0.990 1.004 23.85 24.15 0.939 0.951 24.80 typ. 0.976 typ. 14.90 15.10 0.587 0.594 12.60 12.80 0.496 0.504 3.50 4.30 0.138 0.169 4.10 4.30 0.161 0.169 4.60 5.00 0.181 0.197 4.00 4.30 0.157 0.69 4.00 4.40 0.157 0.173 30.10 30.30 1.185 1.193 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 7: Ordering information Ordering type Marking Package STTH20004TV1 STTH20004TV1 ISOTOP Weight 27 g (without screws) Base qty 10 (with screws) Delivery mode Tube Epoxy meets UL94, V0 ■ Cooling method: by conduction (C) Table 8: Revision history ■ Date Revision 18-Oct-2005 1 Description of Changes First issue 5/6 STTH20004TV Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 6/6