STMICROELECTRONICS ESDA14V2-4BF

ESDA14V2-4BF2
Quad bidirectional Transil™ array for ESD protection
Features
■
4 Bidirectional Transil functions
■
ESD Protection: IEC 61000-4-2 level 4
■
Stand off voltage: 12 V Min.
■
Low leakage current < 1 µA
■
50 W Peak pulse power (8/20 µs)
Flip Chip
(5 bumps)
Benefits
■
High ESD protection level
■
High integration
■
Suitable for high density boards
Figure 1.
Device configuration
A3
A1
C1
C3
Complies with the following standards
■
■
IEC 61000-4-2
– 15 kV (air discharge)
– 8 kV (contact discharge)
MIL STD 883F- Method 3015-7: class3
– 25 kV (human body model)
GND
Figure 2.
Pin configuration (bump side)
3
Applications
2
1
A
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
B
■
Computers
C
■
Printers
■
Communication systems and cellular phones
■
Video equipment
Description
The ESDA14V2-4BF2 is a monolithic array
designed to protect up to 4 lines (bidirectional)
against ESD transients.
This device is particularly adapted to the
protection of symmetrical signals.
The device is ideal for situations where board
space saving is requested.
April 2008
TM: Transil is a trademark of STMicroelectronics.
Rev 4
1/8
www.st.com
8
Characteristics
1
ESDA14V2-4BF2
Characteristics
Table 1.
Absolute ratings (limiting values)
Symbol
Parameter
MIL STD 883E - Method 3015-7
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
Unit
± 25
± 15
±8
kV
VPP
ESD discharge
PPP
Peak pulse power (8/20 µs)
50
W
Junction temperature
125
°C
-55 to +150
°C
260
°C
-40 to +125
°C
Tj
Tstg
Storage temperature range
TL
Lead solder temperature (10 seconds duration)
Top
Operating temperature range
Table 2.
Electrical characteristics (Tamb = 25 °C)
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current @
VRM
IPP
Peak pulse current
C
Capacitance
Rd
Dynamic resistance
I
VCL VBR VRM
Types
ESDA6V1SC5
V
Slope: 1 / Rd
VBR @ IR
IPP
IRM @ VRM
αT
C
typ.(1)
max.(2)
typ.
0 V bias
max.
V
V
mA
µA
V
Ω
10-4/C
pF
14.2
18
1
1
0.1
12
3
3.2
10
15
2. Δ VBR = αT* (Tamb -25 °C) * VBR (25 °C)
max.
Rd
min.
1. Square pulse, Ipp = 3 A, tp = 2.5 µs.
2/8
Value
ESDA14V2-4BF2
Figure 3.
Characteristics
Clamping voltage versus peak
Figure 4.
pulse current (Tj initial = 25 °C)
(Rectangular waveform, tp = 2.5 µs)
Capacitance versus reverse applied
voltage (typical values)
C(pF)
IPP(A)
10.0
14
tp = 2.5µs
F=1MHz
VOSC=30mVRMS
Tj=25°C
12
10
8
1.0
6
4
2
VCL(V)
VR(V)
0.1
0
0
Figure 5.
10
20
30
40
50
60
Relative variation of leakage
current versus junction
temperature (typical values)
0
2
Figure 6.
4
6
8
10
12
14
ESD response to IEC 61000-4-2
(+15 kV air discharge)
IR[Tj] / IR[Tj=25°C]
1000
100
V(i/o)
10
Tj(°C)
1
25
Figure 7.
50
75
100
ESD response to IEC 61000-4-2
(-15 kV air discharge)
125
Figure 8.
Analog crosstalk
Typical crosstalk response of ESDA14V2-4BF1 (A1/A3 line)
0.00
-10.00
-20.00
-30.00
V(i/o)
-40.00
-50.00
-60.00
-70.00
-80.00
-90.00
-100.0
100.0k
1.0M
10.0M
f/Hz
100.0M
1.0G
3/8
Application information
Figure 9.
ESDA14V2-4BF2
Digital crosstalk
rise time: t10-90% = 3ns
VG1
VIN = A1
V = 0-3V
F = 5MHz
β21VG1
VOUT = C3
2
Application information
Figure 10. Application example
A1
Connector
A3
IC
to be
protected
C1
C3
B2
Figure 11. Aplac model
1.2pF
1.2pF
100m
100m
D02_r
BV = 16
IBV = 1m
CJO = 200p
M = 0.3333
RS = 1
VJ = 0.6
TT = 100n
4/8
1.2pF
100m
D02_r
D02_f
BV = 16
IBV = 1m
CJO = 10.4p
M = 0.3333
RS = 2
VJ = 0.6
TT = 100n
B2
B2
50pH 50m
C3
C1
A3
A1
160pH 1.8
1.2pF
100m
ESDA14V2-4BF2
3
Ordering information scheme
Ordering information scheme
Figure 12. Ordering information scheme
ESDA
14V2 - 4
B
Fx
ESD Array
Breakdown Voltage
14V2 = 14.2 Volts min.
Number of line
4 = 4 lines
Type
B = Bidirectional
Package
F = Flip Chip
x = 2: Lead-free, pitch = 500 µm, bump = 315 µm
Package information
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the inner box label, in compliance with JEDEC
Standard JESD97. The maximum ratings related to soldering conditions are also marked on
the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at
www.st.com.
Figure 13. Flip Chip package mechanical data
700µm ± 50
650µm ± 65
µm
±
40
1.12 mm ± 50µm
315µm ± 50
210 µm
1.12 mm ± 50µm
210 µm
49
5
4
5/8
Package information
ESDA14V2-4BF2
Figure 14. Foot print recommendations Figure 15. Marking
Dot, ST logo
xx = marking
z = manufacturing location
yww = datecode
(y = year
ww = week)
Copper pad Diameter:
250 µm recommended, 300 µm max
E
Solder stencil opening: 330 µm
x x z
y ww
Solder mask opening recommendation:
340 µm min for 315 µm copper pad diameter
Figure 16. Flip Chip tape and reel specification
Dot identifying Pin A1 location
3.5 ± 0.1
1.22
ST E
xxz
yww
1.22
ST E
xxz
yww
6/8
ST E
All dimensions in mm
xxz
yww
8 ± 0.3
0.73 ± 0.05
1.75 ± 0.1
Ø 1.5 ± 0.1
4 ± 0.1
4 ± 0.1
User direction of unreeling
ESDA14V2-4BF2
5
Ordering information
Ordering information
Table 3.
Ordering information
Order code
Marking
Package
Weight
Base qty
Delivery mode
ESDA14V2-4BF2
EA
Flip Chip
2.1 mg
5000
Tape and reel 7”
Note:
More information is available in the application notes:
AN1235:"Flip Chip: Package description and recommendations for use"
AN1751: “EMI filters: Recommendations and measurements”
6
Revision history
Table 4.
Document revision history
Date
Revision
Description of changes
14-Mar-2005
1
First issue.
18-Oct-2005
2
Dimension from center bump to corner bump changed in Figure 16. to
indicate diagonal instead of perpendicular measurement. No values
changed. ECOPACK statement added.
04-Jun-2007
3
Reformatted to current standard.
16-Apr-2008
4
Updated ECOPACK statement. Updated Figure 12, Figure 13 and
Figure 16. Reformatted to current standards.
7/8
ESDA14V2-4BF2
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