STMICROELECTRONICS EMIF10

EMIF10-COM01F2
10-line IPAD™, EMI filter including ESD protection
Features
■
EMI symmetrical (I/O) low-pass filter
■
Lead free package
■
Very low PCB space consuming: < 6 mm2
■
Very thin package: 0.65 mm
■
High efficiency in ESD suppression on both
input & output pins
■
High reliability offered by monolithic integration
Complies with the following standard:
■
Flip Chip
(25 bumps)
Figure 1.
IEC 61000-4-2 level 4
– 15 kV (air discharge)
– 8 kV (contact discharge)
Applications
EMI filtering and ESD protection for:
■
Computers and printers
■
Communication systems
■
Mobile phones
Description
Figure 2.
The EMIF10-COM01F2 is a highly integrated
device designed to suppress EMI / RFI noise in all
systems subjected to electromagnetic
interferences. The EMIF10 Flip-Chip packaging
means the package size is equal to the die size.
Pin configuration (bump side)
5
4
3
2
1
I5
I4
I3
I2
I1
A
I10
I9
I8
I7
I6
B
GND
GND
GND
GND
GND
C
010
09
08
07
06
D
05
04
03
02
01
E
Basic cell configuration
Low-pass Filter
Input
Additionally, this filter includes an ESD protection
circuitry which prevents damage to the application
when subjected to ESD surges up to 15 kV.
Output
RI/O = 200Ω
Cline = 45 pF
TM: IPAD is a trademark of STMicroelectronics.
April 2008
Rev 5
1/7
www.st.com
7
Characteristics
1
EMIF10-COM01F2
Characteristics
Table 1.
Absolute ratings (Tamb = 25 °C)
Symbol
VPP
Tj
Parameter and test conditions
Value
Unit
ESD discharge IEC61000-4-2, air discharge
ESD discharge IEC61000-4-2, contact discharge
15
8
kV
Junction temperature
125
°C
Top
Operating temperature range
- 40 to + 85
°C
Tstg
Storage temperature range
- 55 to + 150
°C
Table 2.
Electrical characteristics (Tamb = 25 °C)
Symbol
Parameter
I
VBR
Breakdown voltage
IRM
Leakage current @ VRM
VRM
Stand-off voltage
VCL
Clamping voltage
Rd
Dynamic impedance
IPP
Peak pulse current
RI/O
Resistance between Input and Output
Cline
Input capacitance per line
Symbol
VCL VBR VRM
slope : 1 / R d
Test conditions
VBR
IR = 1 mA
IRM
VRM = 3 V per line
Rd
IPP = 10 A, tp = 2.5 µs
tLH
Figure 3.
Min.
Typ.
Max.
Unit
6
8
10
V
500
nA
180
At 0 V bias
Vinput = 2.8 V
IPP
Ω
1
RI/O
Cline
200
220
Ω
45
50
pF
25
ns
Rload = 100 kΩ
S21(db) attenuation
measurement(1)
V
IRM
IR
Figure 4.
Analog crosstalk
0.00
0.00
dB
dB
-10.00
-10.00
-20.00
-30.00
-20.00
-40.00
-50.00
-30.00
-60.00
-70.00
-40.00
-80.00
-90.00
-50.00
100.0k
1.0M
10.0M
100.0M
f/Hz
1.0G
1. Spikes at high frequencies are induced by the PCB layout
2/7
-100.00
100.0k
1.0M
Xtalk 1/2
10.0M
f/Hz
100.0M
1.0G
EMIF10-COM01F2
Figure 5.
Characteristics
Figure 6.
ESD response to IEC 61000-4-2
(+15 kV air discharge) on one input
(Vin) and on one output (Vout)
ESD response to IEC 61000-4-2
(-15 kV air discharge) on one input
(Vin) and on one output (Vout)
V(in1)
V(in1)
V(out1)
V(out1)
Figure 7.
Rise time measurement
EMIF10-COM01F2
In
Square signal
Generator Vc = 2.8V
Figure 8.
Vin
Out
100k
Vout
Capacitance versus reverse applied voltage
C(pF)
50
F=1MHz
Vosc=30mV
40
30
20
10
0
1
2
3
4
5
VR(V)
3/7
Application information
2
EMIF10-COM01F2
Application information
Figure 9.
Aplac model
200R
out
in
MODEL = demif10
MODEL = demif10
Demif10 model
BV = 7
IBV = 1m
CJO = 25p
M = 0.3333
RS = 1
VJ = 0.6
TT = 100n
sub
2.1
PCB grounding recommendations
In order to ensure a good efficiency in terms of ESD protection and filtering behavior, we
recommend to implement microvias (100 µm dia.) between the GND bumps and the GND
layer. GND bumps can be connected together in PCB layer 1, and in addition, if possible,
use through hole vias (200 µm dia.) in both sides of filter to improve contact to GND (layer).
This layout will minimize the distance to the ground and thus parasitic inductances. In
addition, we recommend to have GND plane wherever possible.
3
Ordering information scheme
Figure 10. Ordering information scheme
EMIF
EMI Filter
Number of lines
Information
x = resistance value (Ohms)
z = capacitance value / 10(pF)
or
3 letters = application
2 digits = version
Package
F = Flip Chip
x = 2: Lead-free, pitch = 500 µm, bump = 315 µm
4/7
yy
-
xxx zz
Fx
EMIF10-COM01F2
Package information
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the inner box label, in compliance with JEDEC
Standard JESD97. The maximum ratings related to soldering conditions are also marked on
the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at
www.st.com.
Figure 11. Flip Chip package dimensions
500 µm ± 50
650 µm ± 65
315 µm ± 50
2.39 mm ± 30 µm
500 µm ± 50
4
Package information
2.39 mm ± 30 µm
Figure 12. Footprint recommendations
Copper pad Diameter:
250 µm recommended, 300 µm max
Figure 13. Marking
Dot, ST logo
xx = marking
z = manufacturing location
yww = datecode
(y = year
ww = week)
E
Solder stencil opening: 330 µm
Solder mask opening recommendation:
340 µm min for 300 µm copper pad diameter
x x z
y ww
5/7
Ordering information
EMIF10-COM01F2
Figure 14. Flip Chip tape and reel specification
Dot identifying Pin A1 location
3.5 ± 0.1
2.6
ST E
User direction of unreeling
Ordering information
Table 3.
Note:
2.6
4 ± 0.1
All dimensions in mm
5
xxz
yww
xxz
yww
ST E
xxz
yww
ST E
8 ± 0.3
0.73 ± 0.05
1.75 ± 0.1
Ø 1.5 ± 0.1
4 ± 0.1
Ordering information
Order code
Marking
Package
Weight
Base qty
Delivery mode
EMIF10-COM01F2
FE
Flip Chip
8.3 mg
5000
Tape and reel
More information is available in the application notes:
AN1235: “Flip Chip: Package description and recommendations for use”
AN1751: "EMI Filters: Recommendations and measurements"
6
Revision history
Table 4.
6/7
Document revision history
Date
Revision
Description of changes
14-Dec-2004
1
First issue.
08-Apr-2005
2
Die shrink.
19-Oct-2005
3
Replaced Figures 3 and 13. Added ECOPACK
statement.
03-Apr-2006
4
Reformatted to current standard. Pin identification in
Figure 1 updated.
17-Apr-2008
5
Updated ECOPACK statement. Updated Figure 10,
Figure 11 and Figure 14. Reformatted to current
standards.
EMIF10-COM01F2
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