STD60N55-1 STD60N55 N-channel 55V - 8.0mΩ - 65A - DPAK - IPAK MDmesh™ low voltage Power MOSFET PRELIMINARY DATA General features Type VDSS RDS(on) ID Pw STD60N55 55V <10.5mΩ 65A 110W STD60N55-1 55V <10.5mΩ 65A 110W ■ Standard threshold drive ■ 100% avalanche tested 3 3 2 1 DPAK 1 IPAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STD60N55 D60N55 DPAK Tape & reel STD60N55-1 D60N55-1 IPAK Tube July 2006 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/12 www.st.com 12 Contents STD60N55 - STD60N55-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/12 ................................................ 6 STD60N55 - STD60N55-1 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS=0) VGS Gate-source voltage Value Unit 55 V ± 20 V ID Drain current (continuous) at TC = 25°C 65 A ID Drain current (continuous) at TC = 100°C 46 A IDM (1) Drain current (pulsed) 260 A PTOT Total dissipation at TC = 25°C 110 W Derating factor 0.73 W/°C 8 V/ns dv/dt (2) Peak diode recovery voltage slope EAS (3) Single pulse avalanche energy 390 mJ Tj Operating junction temperature Storage temperature -55 to 175 °C Value Unit 1.36 °C/W 50 °C/W 275 °C Tstg 1. Pulse width limited by safe operating area 2. ISD <65A, di/dt <300A/µs, VDD< V(BR)DSS. Tj < Tjmax 3. Starting Tj=25°C, Id=32A, Vdd=40V Table 2. Symbol Rthj-case Thermal resistance Parameter Thermal resistance junction-case max Rthj-pcb (1) Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose 1. When mounted on FR-4 board of 1inch², 2oz Cu 3/12 Electrical characteristics 2 STD60N55 - STD60N55-1 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS Static Parameter Drain-source breakdown voltage Test conditions ID = 250µA, VGS= 0 55 V VDS = Max rating, VDS = Max rating,Tc = 125°C 10 100 µA µA Gate body leakage current (VDS = 0) VGS = ±20V ±200 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 4 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 32A 10.5 mΩ IDSS Zero gate voltage drain current (VGS = 0) IGSS Table 4. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd 2 8.0 Dynamic Parameter Test conditions Forward transconductance VDS =25V, ID=32A Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS=0 Total gate charge Gate-source charge Gate-drain charge VDD = 27V, ID = 65A VGS =10V (see Figure 2) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/12 Min. Typ. Max. Unit Min Typ. Max. Unit 50 S 2200 500 25 pF pF pF 33.5 12.5 9.5 45 nC nC nC STD60N55 - STD60N55-1 Table 5. Symbol td(on) tr td(off) tf Table 6. Symbol ISD ISDM (1) VSD trr Qrr IRRM Electrical characteristics Switching on/off (inductive load) Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. VDD = 27V, ID = 32A, RG = 4.7Ω, VGS = 10V (see Figure 3) VDD = 27V, ID = 32A, RG = 4.7Ω, VGS = 10V (see Figure 3) Typ. Max. Unit 20 50 ns ns 35 11.5 ns ns Source drain diode Parameter Test conditions Min. Typ. Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 65A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 65A, VDD = 30V di/dt = 100A/µs, Tj = 150°C(see Figure 5) 47 87 3.7 Max. Unit 65 260 A A 1.5 V ns nC A 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/12 Test circuit STD60N55 - STD60N55-1 3 Test circuit Figure 1. Unclamped inductive load test circuit Figure 2. Unclamped inductive wafeform Figure 3. Switching times test circuit for resistive load Figure 4. Gate charge test circuit Figure 5. Test circuit for inductive load Figure 6. switching and diode recovery times 6/12 Switching time waveform STD60N55 - STD60N55-1 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/12 Package mechanical data STD60N55 - STD60N55-1 DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 6.6 0.252 5.1 6.4 0.260 0.090 4.6 10.1 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.185 2.28 0.6 MAX. 0.200 4.7 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 8/12 STD60N55 - STD60N55-1 Package mechanical data TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 9/12 Packaging mechanical data 5 STD60N55 - STD60N55-1 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 10/12 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD60N55 - STD60N55-1 6 Revision history Revision history Table 7. Revision history Date Revision 17-Jul-2005 1 Changes First release 11/12 STD60N55 - STD60N55-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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