STD60NF55LA N-channel 55V - 0.012Ω - 60A - DPAK STripFET™ II Power MOSFET General features ■ Type VDSS RDS(on) ID STD60NF55LA 55V <0.015Ω 60A Low threshold drive 3 1 Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. DPAK Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STD60NF55LAT4 D60NF55LA DPAK Tape & reel September 2006 Rev 2 1/14 www.st.com 14 Contents STD60NF55LA Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 9 STD60NF55LA 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate- source voltage Value Unit 55 V ± 15 V ID Drain current (continuous) at TC = 25°C 60 A ID Drain current (continuous) at TC = 100°C 42 A Drain current (pulsed) 240 A Total dissipation at TC = 25°C 110 W Derating Factor 0.73 W/°C Peak diode recovery voltage slope 16 V/ns Single pulse avalanche energy 400 mJ -55 to 175 °C IDM (1) Ptot dv/dt(2) EAS (3) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤40A, di/dt ≤350A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. 3. Starting Tj = 25 oC, ID = 17.5A, VDD =24V Table 2. Thermal data Rthj-case Thermal resistance junction-case max 1.36 °C/W Rthj-amb Thermal resistance junction-to ambient max 100 °C/W 3/14 Electrical characteristics 2 STD60NF55LA Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating,@125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 15V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 30A VGS = 5V, ID = 30A ID(on) On state drain current VGS = 3.5V, VDS >12V -55°C < Tj < 150°C Table 4. Symbol Test conditions Typ. Max. 55 Unit V 1 0.012 0.014 1 10 µA µA ±100 nA 2 V 0.015 0.017 Ω Ω 35 A Dynamic Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS = 10V, ID = 30A 35 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 1950 390 130 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 25V, ID = 30A RG = 4.7Ω VGS = 4.5V (see Figure 13) 30 180 80 35 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 40V, ID = 60A, VGS = 5V, RG = 4.7Ω (see Figure 14) 40 10 20 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 4/14 Min. 56 nC nC nC STD60NF55LA Electrical characteristics Table 5. Symbol Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Test conditions Min. Typ. ISD = 60A, VGS = 0 Reverse recovery time ISD = 40A, di/dt = 100A/µs, Reverse recovery charge VDD = 25V, Tj = 150°C Reverse recovery current (see Figure 15) 65 130 4 Max. Unit 60 240 A A 1.3 V ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/14 Electrical characteristics STD60NF55LA 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/14 STD60NF55LA Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/14 Electrical characteristics STD60NF55LA Figure 12. Allowable IAV vs time in avalanche The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: PD(AVE) = 0.5* (1.3*BVDSS*IAV) EAS(AR) = PD(AVE)*tAV Where: IAV is the allowable current in avalanche, PD(AVE) is the average power dissipation in avalanche (single pulse) tAV is the time in avalanche. To derate above 25°C, at fixed IAV, the following equation must be applied: IAV=2*(Tjmax-TCASE) / (1.3*BVDSS*Zth) Where: Zth= K*Rth is the value coming from normalized thermal response at fixed pulse width equal to TAV 8/14 STD60NF55LA 3 Test circuit Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 9/14 Package mechanical data 4 STD60NF55LA Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/14 STD60NF55LA Package mechanical data DPAK MECHANICAL DATA mm. inch DIM. MAX. MIN. A A1 A2 B b4 MIN. 2.2 0.9 0.03 0.64 5.2 TYP 2.4 1.1 0.23 0.9 5.4 0.086 0.035 0.001 0.025 0.204 0.094 0.043 0.009 0.035 0.212 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 0.45 0.48 6 0.6 0.6 6.2 0.017 0.019 0.236 0.023 0.023 0.244 6.6 0.252 5.1 6.4 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.260 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 4.7 2.28 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 11/14 Packing mechanical data 5 STD60NF55LA Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 12/14 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD60NF55LA 6 Revision history Revision history Table 6. Revision history Date Revision Changes 11-May-2005 1 First release 25-Sep-2006 2 New template 13/14 STD60NF55LA Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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