STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STB12NM50 550V <0.35Ω 12A STB12NM50-1 550V <0.35Ω 12A STP12NM50 550V <0.35Ω 12A STP12NM50FP 550V <0.35Ω 12A ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge ■ 100% avalanche tested ■ Low gate input resistance ■ Tight process control and high manufacturing yields 3 1 3 2 1 TO-220 TO-220FP 3 3 12 1 D²PAK 2 I²PAK Internal schematic diagram Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Applications ■ Switching application Order codes Part number Marking Package Packaging STB12NM50T4 B12NM50 D²PAK Tape & reel STB12NM50-1 B12NM50 I²PAK Tube STP12NM50 P12NM50 TO-220 Tube STP12NM50FP P12NM50FP TO-220FP Tube July 2006 Rev 11 1/17 www.st.com 17 Contents STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 ................................................ 9 STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Value Symbol VGS ID ID Parameter Unit TO-220/D²PAK/I²PAK Gate-source voltage TO-220FP ± 30 Drain current (continuous) at TC = 25°C V 12 12 (1) A (1) A Drain current (continuous) at TC=100°C 7.5 7.5 IDM(2) Drain current (pulsed) 48 48(1) A PTOT Total dissipation at TC = 25°C 160 35 W Derating Factor 1.28 0.28 W/°C -- 2500 V VISO Insulation winthstand voltage (DC) dv/dt(3) Peak diode recovery voltage slope TJ Tstg Operating junction temperature Storage temperature 15 V/ns -65 to 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤12A, di/dt ≤400A/µs, VDD =80%V(BR)DSS Table 2. Thermal data Value Symbol Parameter TO-220/D²PAK/ I² PAK Rthj-case Thermal resistance junction-case Max Unit TO-220FP 0.78 3.57 °C/W Rthj-a Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Symbol Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value Unit 6 A 400 mJ 3/17 Electrical characteristics 2 STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±30V VGS(th) Gate threshold voltage VDS= VGS, ID = 50µA RDS(on) Static drain-source on resistance VGS= 10V, ID= 6A Symbol Typ. Max. 500 1 10 µA µA ± 100 nA 4 5 V 0.30 0.35 Ω VDS = Max rating @125°C 3 Unit V VDS = Max rating, IDSS Table 5. Min. Dynamic Parameter gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Equivalent output Coss eq(2). capacitance Test conditions VDS =15V, ID = 6A Min. Typ. Max. Unit 5.5 S 1000 250 20 pF pF pF VGS=0, VDS =0V to 400V 90 pF ns ns VDS =25V, f=1 MHz, VGS=0 td(on) tr Turn-on Delay Time Rise Time VDD = 250V, ID = 6A, RG = 4.7Ω, VGS = 10V (see Figure 14) 20 10 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=400V, ID = 12A VGS =10V (see Figure 15) 28 8 18 Rg Gate input resistance f=1MHz Gate DC Bias=0 test signal level=20mV open drain 1.6 39 nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS 4/17 Ω STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Table 6. Symbol Electrical characteristics Source drain diode Max Unit Source-drain current 11 A ISDM(1) Source-drain current (pulsed) 48 A VSD(2) Forward on voltage 1.5 V ISD trr Qrr IRRM trr Qrr IRRM Parameter Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions Min Typ. ISD=12A, VGS=0 ISD=12A, di/dt = 100A/µs, VDD=100V, Tj=25°C (see Figure 16) ISD=12A, di/dt = 100A/µs, VDD=100V, Tj=150°C (see Figure 16) 270 2.23 16.5 ns µC A 340 3 18 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/17 Electrical characteristics STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/17 STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 8. Electrical characteristics Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/17 Electrical characteristics Figure 13. Source-drain diode forward characteristics 8/17 STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 3 Test circuit Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 9/17 Package mechanical data 4 STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/17 STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/17 Package mechanical data STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 12/17 L5 1 2 3 L4 STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 10.4 0.393 D1 E 8 10 E1 0.315 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 R 0º 0.126 0.015 4º 3 V2 0.4 1 13/17 Package mechanical data STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MIN. 14/17 MAX. MIN. A 4.40 TYP 4.60 0.173 TYP. MAX. A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 0.181 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 15/17 Revision history 6 STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Revision history Table 7. 16/17 Revision history Date Revision Changes 14-Mar-2004 8 Preliminary version 15-Feb-2006 9 New voltage value on first page at tjmax. 05-Apr-2006 10 Inserted ecopack indication 27-Jul-2006 11 New template, no content change STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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