UTC-IC 10N60L-A-TA3-T

UNISONIC TECHNOLOGIES CO., LTD
10N60
Power MOSFET
10 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
„
DESCRIPTION
The UTC 10N60 is a high voltage and high current power MOSFET,
designed to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
„
FEATURES
* 10A, 600V, RDS(ON) [email protected] =10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
„
*Pb-free plating product number: 10N60L
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
10N60-x-TA3-T
10N60L-x-TA3-T
www.unisonic.com.tw
Copyright © 2007 Unisonic Technologies Co., Ltd
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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QW-R502-119.A
10N60
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
10N60-A
10N60-B
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current
(Note 1)
TC = 25°C
TC = 100°C
Continuous Drain Current
Pulsed Drain Current (Note 1)
Single Pulsed (Note 2)
Avalanche Energy
Repetitive (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
„
SYMBOL
θJA
θJC
RATING
62.5
0.8
UNIT
°C/W
°C/W
VDSS
VGSS
IAR
ID
A
A
mJ
mJ
V/ns
W
℃
℃
℃
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
„
UNIT
V
V
V
A
IDM
EAS
EAR
dv/dt
PD
TJ
TOPR
TSTG
RATINGS
600
650
± 30
9.5
9.5
3.3
38
700
15.6
4.5
156
+150
-55 ~ +150
-55 ~ +150
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
SYMBOL
BVDSS
BVDSS
IDSS
MIN TYP MAX UNIT
VGS = 0V, ID = 250µA
600
VGS = 0V, ID = 250µA
650
Drain-Source Leakage Current
VDS = 600V, VGS = 0V
1
Forward
VGS = 30 V, VDS = 0 V
100
Gate-Source Leakage Current
IGSS
-100
Reverse
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID = 250 µA, Referenced to 25°C
0.7
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250µA
2.0
4.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 4.75A
0.6 0.73
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1570 2040
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
COSS
166 215
Reverse Transfer Capacitance
CRSS
18
24
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
23
55
Turn-On Rise Time
tR
VDD=300V, ID =10A, RG =25Ω
69
150
(Note 4, 5)
Turn-Off Delay Time
tD(OFF)
144 300
Turn-Off Fall Time
tF
77
165
Total Gate Charge
QG
44
57
VDS=480V, ID=10A, VGS=10 V
Gate-Source Charge
QGS
6.7
(Note 4, 5)
18.5
Gate-Drain Charge
QGD
Drain-Source Breakdown Voltage
10N60-A
10N60-B
TEST CONDITIONS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
V
V
µA
nA
nA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
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QW-R502-119.A
10N60
„
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS =10A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR
VGS = 0 V, IS = 10A,
dIF / dt = 100 A/µs (Note 4)
Reverse Recovery Charge
QRR
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
3. ISD ≤ 9.5A, di/dt ≤200A/µs, VDD ≤BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
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MIN
TYP MAX UNIT
420
4.2
1.4
V
10
A
38
A
ns
µC
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QW-R502-119.A
10N60
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
Same Type
as D.U.T.
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
4 of 9
QW-R502-119.A
10N60
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
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Time
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-119.A
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance, RDS(ON) (Ω)
„
Gate-Source Voltage, VCG (V)
Capacitance, (pF)
10N60
Power MOSFET
TYPICAL CHARACTERISTICS
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QW-R502-119.A
6 of 9
10N60
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Drain-Source On-Resistance, RDS(ON)
(Normalized)
Drain-Source Breakdown Voltage,
BVDSS (Normalized)
„
Maximum Drain Current vs. Case Temperature
Maximum Safe Operating Area
102
10
10μs
8
100μs
101
Drain Current, ID (A)
Drain Current, ID (A)
Operation in this Area is United by RDM
1ms
10ms
100ms
DC
100
Notes:
1.TC=25℃
2.TJ=150℃
3.Single Pulse
10-1 0
10
102
101
Drain-Source Voltage, VDS (V)
4
2
103
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6
0
25
50
75
100
125
Case Temperature, TC (℃)
150
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QW-R502-119.A
10N60
Power MOSFET
Transient Thermal Response Curve
100
D=0.5
0.2
NOTES:
1.ZθJC(t)=2.5D/W Max
2.Duty Factor,D=t1/t2
3.TJW-TC=PDW-ZθJC(t)
-1
10
0.1
0.05
0.02
PDW
0.01
10-2
10-5
Single pulse
10-4
10-3
10-2
10-1
Square Wave Pulse Duration, t1 (sec)
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t1
t2
100
101
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QW-R502-119.A
10N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-119.A