UTC-IC 8N60

UNISONIC TECHNOLOGIES CO., LTD
8N60
Power MOSFET
7.5 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
„
DESCRIPTION
The UTC 8N60 is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
„
FEATURES
*Pb-free plating product number: 8N60L
* RDS(ON) = 1.2Ω @VGS = 10 V
* Ultra low gate charge ( typical 28 nC )
* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
8N60-x-TA3-T
8N60L-x-TA3-T
8N60-x-TF3-T
8N60L-x-TF3-T
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Copyright © 2007 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
1 of 8
QW-R502-115,B
8N60
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
600
V
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
7.5
A
TC = 25°C
7.5
A
Continuous Drain Current
ID
TC = 100°C
4.6
A
Pulsed Drain Current (Note 1)
IDM
30
A
Single Pulsed (Note 2)
EAS
230
mJ
Avalanche Energy
14.7
mJ
Repetitive (Note 1)
EAR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TO-220
147
W
Power Dissipation
PD
TO-220F
48
W
Junction Temperature
TJ
+150
℃
Operating Temperature
TOPR
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
8N60-A
8N60-B
„
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
„
SYMBOL
TO-220
TO-220F
TO-220
TO-220F
θJA
θJC
RATING
62.5
62.5
0.85
2.6
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
8N60-A
8N60-B
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
BVDSS
VGS = 0 V, ID = 250 µA
IDSS
VDS = 600 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
IGSS
MIN TYP MAX UNIT
600
650
VGS(TH)
RDS(ON)
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.75 A
VDS = 25 V, VGS = 0 V, f = 1MHz
VDD = 300V, ID = 7.5 A, RG = 25Ω
(Note 4, 5)
VDS= 480V,ID= 7.5A, VGS= 10 V
(Note 4, 5)
V
V
µA
nA
nA
10
100
-100
△BVDSS/△TJ ID = 250 µA, Referenced to 25°C
UNISONIC TECHNOLOGIES CO., LTD
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TEST CONDITIONS
0.7
2.0
1.0
V/℃
4.0
1.2
V
Ω
965 1255
105 135
12
16
pF
pF
pF
16.5 45
60.5 130
81 170
64.5 140
28
36
4.5
12
ns
ns
ns
ns
nC
nC
nC
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QW-R502-115,B
8N60
„
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 7.5 A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR
VGS = 0 V, IS = 7.5 A,
dIF/dt = 100 A/µs (Note 4)
Reverse Recovery Charge
QRR
Notes: 1. Repetitive Rating : Pulse width limited by TJ
2. L = 7.3mH, IAS = 7.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 7.5A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
365
3.4
1.4
V
7.5
A
30
A
ns
µC
3 of 8
QW-R502-115,B
8N60
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
Same Type
as D.U.T.
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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4 of 8
QW-R502-115,B
8N60
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
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Time
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-115,B
8N60
TYPICAL CHARACTERISTICS
Body Diode Forward Voltage vs. Source
Current
On-Resistance Variation vs. Drain Current
and Gate Voltage
6
10
5
VGS=10V
4
3
VGS=20V
2
1
0
Note: TJ=25℃
0
5
10
15
20
Drain Current, ID (A)
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance, RDS(ON)
(ohm)
„
Power MOSFET
150℃
25℃
1
Notes:
1. VGS=0V
2. 250µs Test
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source-Drain Voltage, VSD (V)
Capacitance Characteristics
(Non-Repetitive)
1900
1700
1500
1300
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
Ciss
12
10
VDS=300V
8
1100
900
700
Gate Charge Characteristics
Coss
4
2
Note: ID=8A
0
10
Drain-SourceVoltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
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VDS=120V
6
Crss
500
Notes:
300 1. V =0V
GS
100 2. f = 1MHz
0
0.1
1
VDS=480V
0
5
10
15
20
25
30
Total Gate Charge, QG (nC)
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QW-R502-115,B
8N60
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs.
Temperature
On-Resistance Junction Temperature
3.0
1.2
2.5
1.1
2.0
1.0
1.5
1.0
0.9
Note:
1. VGS=0V
2. ID=250µA
0.8
-100
0.0
-100
-50
0
50 100 150 200
Junction Temperature, TJ (℃)
100
Note:
1. VGS=10V
2. ID=4A
0.5
-50 0
50 100 150 200
Junction Temperature, TJ (℃)
Maximum Drain Current vs. Case
Temperature
Maximum Safe Operating Area
10
Operation in This Area is Limited by RDS(on)
Drain Current, ID (A)
100µs
Drain Current, ID (A)
„
Power MOSFET
100µs
10
1ms
DC
1
10ms
Notes:
1. TJ=25℃
2. TJ=150℃
3. Single Pulse
0.1
8
6
4
2
0
1
10
100
1000
Drain-Source Voltage, VDS (V)
25
50
75
100
125
150
Case Temperature, TC (℃)
Transient Thermal Response
Curve
1
D=0.5
D=0.2
D=0.1
0.1 D=0.05
0.02
0.01
Single pulse
0.01
10-5
Notes:
1. θJC (t) = 0.85℃/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
10-4 10-3 10-2 10-1 100
101
Square Wave Pulse Duration, t1 (sec)
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www.unisonic.com.tw
7 of 8
QW-R502-115,B
8N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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