i, L/nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2SB1588
Silicon PNP Darlington Power Transistor
("^011)93
•VWH
yr
DESCRIPTION
• High DC Current Gain: hFE= 5000(Min)@lc= -7A
• Low-Collector Saturation VoltagePIN 1.BASE
: VCE(satr -2.5V(Max.)@lc= -7A
• Complement to Type 2SD2439
2. COLLECTOR
3. EMITTER
1
2
3
TO-3PML package
APPLICATIONS
• Designed for audio, series regulator and general purpose
J;- 1 "'-'""^ ZSC-TF
applications.
\f V: .1
A
. •-'
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-10
A
IB
Base Current- Continuous
-1
A
PC
Collector Power Dissipation
@ TC-25°C
80
W
Tj
Junction Temperature
150
°C
-55-150
•c
|i- IT " f
Z
.4
G
mm
Tstg
Storage Temperature Range
MIN
MAX
DIM
A 19.90 20.10
B 15,90 16.10
5,50
C
5.70
0.90
D
1.10
3.30
3.50
F
3.10
2.90
G
5.90
6.10
H
j 0 595 0605
K 22.30 22.50
1.90
2.10
L
N 10.80 11.00
Q
4.90
5.10
R
3.75
3.95
3.20
3.40
S
L)
9.90 10.10
Y
4.70
4.90
1.90
2.10
Z
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
2SB1588
Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
fc=2B'C unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
lc= -30mA; IB= 0
VcE(sat)
Collector-Emitter Saturation Voltage
|c= -7A; IB= -7mA
-2.5
V
VBE(sat)
Base-Emitter Saturation Voltage
lc= -7 A; IB= -7mA
-3.0
V
ICBO
Collector Cutoff Current
V CB =-160V;I E =0
-100
uA
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
-100
uA
hFE
DC Current Gain
lc= -7A; VCE= -4V
COB
Collector Output Capacitance
lE=0;V CB =-10V;f=1MHz
Current-Gain— Bandwidth Product
I E =2A;V CE =-12V
fr
CONDITIONS
MIN
TYP.
MAX
-150
UNIT
V
5000
30000
230
PF
50
MHz
0.8
11 S
3.0
us
1.2
11 S
Switching Times
ton
Turn-on Time
tstg
Storage Time
lc=-7A; lBi=-lB2=-7mA,
Vcc= -70V, RL= 1 0 a
Fall Time
tf
Classifications
o
P
Y
5000-12000
6500-20000
15000-30000