, One.. tJ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor D209L DESCRIPTION • High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) i • High Switching Speed • High Reliability PIN 1.BASE 2.COLLECTOR 3. BETTER 1 2 TO-3PN package 3 APPLICATIONS • Switching regulators uQi • Ultrasonic generators • High frequency inverters • General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25r) SYMBOL PARAMETER VALUE UNIT mm VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 9 V Ic Collector Current-Continuous 12 A PC Collector Power Dissipation @ TC=25'C 100 W Tj Junction Temperature 150 •c -55-150 'C WIN DIM MAX A 19.90 20.10 B 15.38 15.42 C 4.75 4.85 D 0.90 1.10 E 1.90 2.10 F G H J K L N q R Tstg Storage Temperature Range s u Y 3.40 2.98 3.20 0.595 19.95 1.98 10.89 4.95 3.35 1.995 5.90 9.90 3.60 3.02 3.40 0.605 20.25 2.02 10.91 5.05 3.45 2.005 'L1L 10.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and presage dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and-reliable at the time of c?^n to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors D209L Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tc=25°C unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage lc=10mA;l B =0 400 V V(BR)CBO Collector-Base Breakdown Voltage l c =1mA; I E =0 700 V IEBO Emitter Cutoff Current VEB= TV; lc=0 hpEi DC Current Gain lc=5A ; VCE= 5V 8 40 hp£2 DC Current Gain lc=8A;V C E=5V 6 30 VcE(sat) Collector-Emitter Saturation Voltage lc= 5A; IB= 1A 1.0 V VBE(sat) Base-Emitter Saturation Voltage I C =8A;I B =1.6A 1.2 V fl Current Gain Bandwidth Product VCE=1 OV,lc=100mA,f=1 MHZ CONDITIONS MIN TYP. MAX 0.01 5 UNIT mA MHZ Switching times ts Storage Time tf Fall Time 3.0 us 0.7 ns I C =8A,I B 1=-IB2=1.6A