NJSEMI 2SB1567

TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2SB1567
Silicon PNP Darlington Power Transistor
DESCRIPTION
• Collector-Emitter Breakdown Voltage: V(BR)CEo=-100V(Min)
• High DC Current Gain-
W
: hFE= 1000(Min)@ (VCE= -2V, lc= -1A)
PIN LEASE
2.COLLECTOR
3. EMITTER
• Complement to Type 2SD2398
1 2
TO-220F package
APPLICATIONS
• Designed for high power switching applications.
Q
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-8
V
Collector Current-Continuous
-2
A
Ic
Collector Current-Peak
-3
Collector Power Dissipation
@Ta=25'C
2
Collector Power Dissipation
@TC=25°C
20
Tj
Junction Temperature
150
•c
Tstg
Storage Temperature
-55-150
"C
ICM
A
W
PC
L ~ -
-R
0
N
J --
mm
DIM
MINI
MAX
A 14.95 15.05
B 10.00 10.10
C
4.40
4.60
D
0.75
0.80
3.10
3.30
F
3.70
H
3.40
J
0.50
0.70
K
13.4
13.6
1.10
1.30
L
5.20
N
5.00
q 2.70 2.90
R
2.20
2.40
s 2.65 2.85
u 6.40 6.60
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon PNP Darlington Power Transistor
2SB1567
ELECTRICAL CHARACTERISTICS
Tj=25"C unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
lc= -5mA; !B= 0
-100
V
V(BR)CBO
Collector-Base Breakdown Voltage
lc= -50 u A; IE= 0
-100
V
VcE(sat)
Collector-Emitter Saturation Voltage
lc=-1A;l B =-1mA
-1.5
V
ICBO
Collector Cutoff Current
V CB =-100V;I E =0
-10
uA
IEBO
Emitter Cutoff Current
VEa= -7V; lc= 0
-3.0
mA
hFE
DC Current Gain
lc=-1A;V CE =-2V
COB
Collector Output Capacitance
l E =0;V C B=-10V;f=1MHz
CONDITIONS
MIN
TYP.
1000
MAX
UNIT
10000
35
PF