ONSEMI NGTB30N120LWG

NGTB30N120LWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications. Offering
both low on−state voltage and minimal switching loss, the IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
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30 A, 1200 V
VCEsat = 1.75 V
Eoff = 1.0 mJ
Features
•
•
•
•
•
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Low Gate Charge
5 ms Short−Circuit Capability
These are Pb−Free Devices
C
Typical Applications
•
•
•
•
Inverter Welding Machines
Microwave Ovens
Industrial Switching
Motor Control Inverter
G
E
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Collector−emitter voltage
Rating
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
ICM
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
Diode pulsed current, Tpulse limited
by TJmax
IFM
240
Gate−emitter voltage
VGE
$20
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Short−Circuit Withstand Time
VGE = 15 V, VCE = 600 V, TJ ≤ 150°C
Tsc
5
ms
Operating junction temperature range
TJ
−55 to +150
°C
Storage temperature range
Tstg
−55 to +150
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
A
60
30
240
G
C
TO−247
CASE 340L
STYLE 4
E
A
A
60
30
MARKING DIAGRAM
A
V
30N120L
AYWWG
W
260
104
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB30N120LWG
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB30N120L/D
NGTB30N120LWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.48
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
1.5
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 30 A
VGE = 15 V, IC = 30 A, TJ = 150°C
VCEsat
1.35
−
1.75
2.1
2.2
−
V
VGE = VCE, IC = 400 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
ICES
−
−
−
−
0.5
2.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
100
nA
Cies
−
10,400
−
pF
Coes
−
245
−
Cres
−
185
−
Qg
−
420
−
Qge
−
94
−
Qgc
−
178
−
td(on)
−
136
−
tr
−
36
−
td(off)
−
360
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 600 V, IC = 30 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
TJ = 25°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15 V
Turn-off switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
TJ = 125°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15 V
Turn-off switching loss
tf
−
150
−
Eon
−
4.4
−
Eoff
−
1.0
−
td(on)
−
131
−
tr
−
36
−
td(off)
−
380
−
tf
−
216
−
Eon
−
5.3
−
Eoff
−
2.0
−
VF
−
−
ns
mJ
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 30 A
VGE = 0 V, IF = 30 A, TJ = 150°C
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2
1.5
1.7
1.7
−
V
NGTB30N120LWG
TYPICAL CHARACTERISTICS
TJ = 25°C
10 V
120
100
80
9V
60
40
20
8V
7V
0
1
2
4
5
9V
60
8V
40
20
7V
0
1
2
3
4
Figure 1. Output Characteristics
Figure 2. Output Characteristics
140
10 V
TJ = −40°C
80
60
9V
40
7V
20
8V
0
1
2
5
160
100
0
80
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE = 20 to 11 V
120
10 V
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
160
IC, COLLECTOR CURRENT (A)
3
VGE = 20 to 13 V
TJ = 150°C
120
0
IC, COLLECTOR CURRENT (A)
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
140
140
VGE = 20 to 11 V
3
4
140
120
100
80
60
TJ = 150°C
40
TJ = 25°C
20
0
5
0
4
8
12
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
100,000
3.0
IC = 60 A
2.5
2.0
IC = 30 A
1.5
IC = 10 A
1.0
IC = 5 A
Cies
10,000
CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
160
1000
Coes
100
0.5
0
−50
Cres
−20
10
40
70
100
130
10
160
0
20
40
60
80
100 120 140 160 180 200
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB30N120LWG
TYPICAL CHARACTERISTICS
20
120
VGE, GATE−EMITTER VOLTAGE (V)
IF, FORWARD CURRENT (A)
140
TJ = 25°C
100
TJ = 150°C
80
60
40
20
0
0
0.5
1.0
2.0
1.5
2.5
3.0
5
0
0
120
180
240
300
360
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
480
td(off)
VCE = 600 V
VGE = 15 V
IC = 30 A
Rg = 10 W
3
2
SWITCHING TIME (ns)
Eon
4
Eoff
tf
td(on)
100
tr
10
VCE = 600 V
VGE = 15 V
IC = 30 A
Rg = 10 W
1
0
12
20
40
60
80
8
100
120
140
1
160
0
20
40
60
80
100
140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
1000
td(off)
Eon
6
4
Eoff
tf
td(on)
100
tr
10
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
2
16
120
TJ, JUNCTION TEMPERATURE (°C)
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
10
0
420
1000
5
0
60
QG, GATE CHARGE (nC)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
10
VF, FORWARD VOLTAGE (V)
6
SWITCHING LOSS (mJ)
VCE = 600 V
15
24
32
40
48
56
1
64
16
24
32
40
48
56
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
64
NGTB30N120LWG
TYPICAL CHARACTERISTICS
14
10,000
VCE = 600 V
VGE = 15 V
IC = 30 A
TJ = 150°C
10
Eon
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
12
8
6
Eoff
4
td(off)
1000
tf
td(on)
100
tr
VCE = 600 V
VGE = 15 V
IC = 30 A
TJ = 150°C
10
2
0
5
15
25
35
45
55
65
75
1
85
15
55
75
85
725
775
65
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
td(off)
SWITCHING TIME (ns)
6
Eon
5
4
3
Eoff
2
tf
td(on)
100
tr
10
VGE = 15 V
IC = 30 A
Rg = 10 W
TJ = 150°C
1
375 425
475
525
575
625
675
725
1
775
375
425
475
525
575
625
675
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
100 ms
100
IC, COLLECTOR CURRENT (A)
1000
IC, COLLECTOR CURRENT (A)
45
Rg, GATE RESISTOR (W)
VGE = 15 V
IC = 30 A
Rg = 10 W
TJ = 150°C
7
50 ms
1 ms
10
dc operation
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
35
1000
8
0
25
Rg, GATE RESISTOR (W)
9
SWITCHING LOSS (mJ)
5
1
10
100
100
10
VGE = 15 V, TC = 125°C
1
1000
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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5
NGTB30N120LWG
TYPICAL CHARACTERISTICS
1
R(t) (°C/W)
50% Duty Cycle
0.1
RqJC = 0.48
20%
10%
R1
Junction
5%
0.01
R2
1%
0.000001
Case
Ci = ti/Ri
2%
C1
0.00001
Cn
C2
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.001
Rn
0.0001
0.001
0.01
0.1
1
10
Ri (°C/W)
ti (sec)
0.01616
0.04030
0.060
0.090
0.176
0.093
1.0E−4
1.76E−4
0.002
0.03
0.1
2.0
100
1000
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
10
R(t) (°C/W)
1
RqJC = 1.5
50% Duty Cycle
20%
10%
0.1 5%
2%
1%
R1
Junction
C1
Case
0.00001
Cn
C2
Ri (°C/W)
ti (sec)
0.19655
0.414
0.5
0.345
0.0934
1.48E−4
0.002
0.03
0.1
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.000001
Rn
Ci = ti/Ri
0.01
0.001
R2
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 20. Diode Transient Thermal Impedance
Figure 21. Test Circuit for Switching Characteristics
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6
10
100
1000
NGTB30N120LWG
Figure 22. Definition of Turn On Waveform
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7
NGTB30N120LWG
Figure 23. Definition of Turn Off Waveform
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8
NGTB30N120LWG
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE F
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
F 2 PL
W
J
D 3 PL
0.25 (0.010)
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
STYLE 4:
PIN 1.
2.
3.
4.
H
G
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
S
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
GATE
COLLECTOR
EMITTER
COLLECTOR
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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NGTB30N120L/D