NTNS3164NZ Advance Information Small Signal MOSFET 20 V, 245 mA, Single N−Channel, SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package http://onsemi.com V(BR)DSS Features ID Max 1.5 W @ 4.5 V • Single N−Channel MOSFET • Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for • • • RDS(on) MAX Extremely Thin Environments Such as Portable Electronics Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm Package 1.5 V Gate Drive These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2.0 W @ 2.5 V 20 V 245 mA 4.0 W @ 1.8 V 6.8 W @ 1.5 V N−CHANNEL MOSFET Applications • High Side Switch • High Speed Interfacing • Optimized for Power Management in Ultra Portable Solutions D (3) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter G (1) Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±8 V Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State TA = 25°C t≤5s TA = 25°C Steady State TA = 85°C TA = 25°C 245 ID 176 S (2) mA 287 PD t≤5s MARKING DIAGRAM 154 mW 3 212 XX M IDM 732 mA TJ, TSTG −55 to 150 °C SOT−883 (XDFN3) CASE 506CB Source Current (Body Diode) (Note 2) IS 128 mA XX M Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C tp = 10 ms Operating Junction and Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% This document contains information on a new product. Specifications and information herein are subject to change without notice. © Semiconductor Components Industries, LLC, 2012 June, 2012 − Rev. P1 1 2 1 = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping† NTNS3164NZT5G SOT−883 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTNS3164NZ/D NTNS3164NZ THERMAL RESISTANCE RATINGS Symbol Max Junction−to−Ambient – Steady State (Note 3) Parameter RθJA 814 Junction−to−Ambient – t ≤ 5 s (Note 3) RθJA 589 Unit °C/W 3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS ID = 250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 20 V Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5 V VGS(TH) VGS = VDS, ID = 250 mA V 20 TJ = 25°C mV/°C 1 mA ±10 mA 1.0 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Source−Drain Diode Voltage VGS(TH)/TJ 0.4 1.7 RDS(on) VSD mV/°C VGS = 4.5 V, ID = 200 mA 0.5 1.5 VGS = 2.5 V, ID = 100 mA 0.7 2.0 VGS = 1.8 V, ID = 50 mA 1.0 4.0 VGS= 1.5 V, ID = 10 mA 1.3 6.8 VGS = 0 V, IS = 100 mA 0.75 1.2 W V CHARGES & CAPACITANCES Input Capacitance CISS 23 Output Capacitance COSS Reverse Transfer Capacitance CRSS 3.3 Total Gate Charge QG(TOT) 0.8 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 0 V, freq = 1 MHz, VDS = 10 V VGS = 4.5 V, VDS = 10 V; ID = 200 mA 5.0 0.1 0.2 pF nC 0.1 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 12 VGS = 4.5 V, VDD = 10 V, ID = 200 mA, RG = 2 W tf 17 90 42 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 ns NTNS3164NZ RDS(on), NORMALIZED DRAIN−TO−SOURCE RESISTANCE (W) 1.8 1.7 1.6 VGS = 4.5 V ID = 200 mA 1.5 1.4 1.3 1.2 VGS = 1.8 V ID = 50 mA 1.1 1.0 0.9 0.8 0.7 0.6 −50 −25 0 25 50 75 100 125 VGS(th), GATE−TO−SOURCE THRESHOLD VOLTAGE (V) TYPICAL CHARACTERISTICS 150 0.85 0.80 ID = 250 mA 0.75 0.70 0.65 0.60 0.55 0.50 0.45 −50 TJ, JUNCTION TEMPERATURE (°C) −25 0 25 50 75 100 TJ, TEMPERATURE JUNCTION (°C) Figure 1. On Resistance Variation with Temperature Figure 2. Threshold Voltage http://onsemi.com 3 125 150 NTNS3164NZ PACKAGE DIMENSIONS SOT−883 (XDFN3), 1.0x0.6, 0.35P CASE 506CB ISSUE A PIN ONE REFERENCE 0.10 C ÉÉÉ 0.10 C E DIM A A1 b D D2 e E E2 L TOP VIEW NOTE 3 0.10 C 0.10 C 3X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. EXPOSED COPPER ALLOWED AS SHOWN. A B D A1 SIDE VIEW A C SEATING PLANE RECOMMENDED SOLDER FOOTPRINT* 1.10 D2 2X E2 e/2 1 e 0.10 M b C A B 0.05 M C 2X 3X MILLIMETERS MIN MAX 0.340 0.440 0.000 0.030 0.075 0.200 0.950 1.075 0.620 BSC 0.350 BSC 0.550 0.675 0.425 0.550 0.170 0.300 L 2X 0.41 0.43 1 0.55 0.20 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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