STB18N65M5, STD18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages Datasheet — production data Features Order codes STB18N65M5 STD18N65M5 VDSS @ TJmax RDS(on) max ID TAB TAB 710 V < 0.22 Ω 15 A 2 2 3 3 1 D2PAK ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Applications ■ 1 Figure 1. DPAK Internal schematic diagram Switching applications $4!" Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. ' 3 !-V Device summary Order codes Marking Package D2PAK STB18N65M5 Tape and reel 18N65M5 STD18N65M5 July 2012 This is information on a product in full production. Packaging DPAK Doc ID 023446 Rev 1 1/18 www.st.com 18 Contents STB18N65M5, STD18N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 .............................................. 9 Doc ID 023446 Rev 1 STB18N65M5, STD18N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Gate-source voltage VGS Unit D2PAK DPAK ± 25 V ID Drain current (continuous) at TC = 25 °C 15 A ID Drain current (continuous) at TC = 100 °C 9.4 A Drain current (pulsed) 60 A Total dissipation at TC = 25 °C 110 W Peak diode recovery voltage slope 15 V/ns - 55 to 150 °C 150 °C IDM (1) PTOT dv/dt (1) Tstg Storage temperature Tj Max. operating junction temperature 1. ISD ≤ 15 A, di/dt ≤400 A/µs; VDSPeak < V(BR)DSS, VDD = 400 V Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-pcb (1) Thermal resistance junction-pcb max Unit D2PAK DPAK 1.14 30 °C/W 50 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Table 4. Symbol Avalanche characteristics Parameter IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax ) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID= IAR; VDD=50 V) Doc ID 023446 Rev 1 Value Unit 4 A 210 mJ 3/18 Electrical characteristics 2 STB18N65M5, STD18N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onVGS = 10 V, ID = 7.5 A resistance Symbol Ciss Coss Crss Co(tr)(1) Co(er) (2) Typ. Max. Unit 650 V 1 100 µA µA ± 100 nA 4 5 V 0.198 0.22 Ω Min. Typ. Max. Unit - 1240 32 3.2 - pF pF pF - 99 - pF - 30 - pF - 3 - Ω - 31 8 14 - nC nC nC VGS = ± 25 V VGS(th) Table 6. Min. 3 Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 Equivalent capacitance time related VDS = 0 to 520 V, VGS = 0 Equivalent capacitance energy related RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 7.5 A, VGS = 10 V (see Figure 18) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/18 Doc ID 023446 Rev 1 STB18N65M5, STD18N65M5 Table 7. Symbol td (V) tr (V) tf(i) tc(off) Table 8. Electrical characteristics Switching times Parameter Test conditions Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 9.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19 and Figure 22) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Typ. - 36 7 9 11 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol trr Qrr Min. Test conditions Max. Unit - 15 60 A A ISD = 15 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 15 A, di/dt = 100 A/µs VDD = 100 V (see Figure 22) - 290 3.4 23.5 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 15 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 22) - 352 4 24 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 023446 Rev 1 5/18 Electrical characteristics STB18N65M5, STD18N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK Figure 3. Thermal impedance for D2PAK Figure 5. Thermal impedance for DPAK Figure 7. Transfer characteristics AM12487v1 S( on ) Op Lim era ite tion d by in th m is ax ar RD ea is ID (A) 10 10µs 100µs 1ms 1 Tj=150°C Tc=25°C 10ms Single pulse 0.1 0.1 Figure 4. 10 1 VDS(V) 100 Safe operating area for DPAK AM124871v1 (o n) 10µs DS Op Lim era ite tion d by in th m is ax ar R e a is ID (A) 10 100µs 1 0.1 0.1 Figure 6. 1 Tj=150°C Tc=25°C 1ms Single pulse 10ms 10 VDS(V) 100 Output characteristics AM12472v1 ID (A) VGS= 9, 10 V 35 35 VGS= 8 V 25 25 20 20 VGS= 7 V 15 15 10 10 VGS= 6 V 5 6/18 VDS= 25 V 30 30 0 0 AM12486v1 ID (A) 5 10 15 20 5 VDS(V) 0 3 Doc ID 023446 Rev 1 4 5 6 7 8 9 VGS(V) STB18N65M5, STD18N65M5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM12474v1 VGS (V) VDS (V) 500 VDD=520V 12 ID=7.5A VDS Static drain-source on-resistance RDS(on) (Ω) 0.24 AM12475v1 VGS=10V 0.23 10 400 8 300 0.22 0.21 0.2 6 200 4 0.19 0.18 100 2 0 0 Figure 10. 0.17 5 10 15 20 25 30 0 Qg(nC) Capacitance variations 2 4 6 8 10 12 14 ID(A) Figure 11. Output capacitance stored energy AM12476v1 C (pF) 0.16 0 AM12484v1 Eoss (µJ) 6 10000 5 Ciss 1000 4 3 100 2 Coss 10 1 Crss 1 0.1 1 100 10 Figure 12. Normalized gate threshold voltage vs temperature AM12471v1 VGS(th) (norm) 1.10 0 0 VDS(V) ID = 250 µA VDS = VGS 600 VDS(V) Figure 13. Normalized on-resistance vs temperature AM12483v1 RDS(on) (norm) 2.1 1.9 1.00 400 200 VGS= 10V ID= 7.5 A 1.7 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) 0.5 -50 -25 Doc ID 023446 Rev 1 0 25 50 75 100 TJ(°C) 7/18 Electrical characteristics STB18N65M5, STD18N65M5 Figure 14. Drain-source diode forward characteristics Figure 15. Normalized BVDSS vs temperature AM05461v1 VSD (V) AM10399v1 VDS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0 0.94 0 10 30 20 40 50 ISD(A) 0.92 -50 -25 Figure 16. Switching losses vs gate resistance (1) AM12485v1 E (μJ) VDD=400V VGS=10V ID=9.5A 160 140 Eon 120 100 80 60 Eoff 40 20 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/18 Doc ID 023446 Rev 1 0 25 50 75 100 TJ(°C) STB18N65M5, STD18N65M5 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit 6$$ 6 K K N& & 2, & 6'3 )'#/.34 6$$ 6I66'-!8 6$ 2' & $54 $54 6' K 07 K K 07 !-V !-V Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit ! ! $54 &!34 $)/$% " " , ! $ ' 3 6$ , ( & " & $ 6$$ & & 6$$ )$ ' 2' 3 6I $54 0W !-V Figure 21. Unclamped inductive waveform 6"2$33 !-V Figure 22. Switching time waveform Concept waveform for Inductive Load Turn-off Id 6$ 90%Vds 90%Id Tdelay-off -off )$Vgs 90%Vgs on )$ Vgs(I(t)) )) 6$$ 6$$ 10%Id 10%Vds Vds Trise !-V Doc ID 023446 Rev 1 Tfall Tcross --over AM05540v2 9/18 Package mechanical data 4 STB18N65M5, STD18N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/18 Typ. 0.4 0° 8° Doc ID 023446 Rev 1 STB18N65M5, STD18N65M5 Package mechanical data Figure 23. D²PAK (TO-263) drawing 0079457_T Figure 24. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimensions are in millimeters Doc ID 023446 Rev 1 11/18 Package mechanical data Table 10. STB18N65M5, STD18N65M5 DPAK (TO-252) mechanical data mm Dim. Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 R V2 12/18 Typ. 1 0.20 0° 8° Doc ID 023446 Rev 1 STB18N65M5, STD18N65M5 Package mechanical data Figure 25. DPAK (TO-252) drawing 0068772_I Figure 26. DPAK footprint(b) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 b. All dimensions are in millimeters Doc ID 023446 Rev 1 13/18 Packaging mechanical data 5 STB18N65M5, STD18N65M5 Packaging mechanical data Table 11. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Table 12. 18.4 22.4 D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 14/18 Max. Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 Doc ID 023446 Rev 1 Max. 330 13.2 26.4 30.4 STB18N65M5, STD18N65M5 Table 12. Packaging mechanical data D²PAK (TO-263) tape and reel mechanical data (continued) Tape Reel mm mm Dim. Dim. Min. Max. R 50 T 0.25 0.35 W 23.7 24.3 Min. Max. Figure 27. Tape for D²PAK (TO-263) and DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Doc ID 023446 Rev 1 15/18 Packaging mechanical data STB18N65M5, STD18N65M5 Figure 28. Reel for D²PAK (TO-263) and DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 16/18 Doc ID 023446 Rev 1 STB18N65M5, STD18N65M5 6 Revision history Revision history Table 13. Document revision history Date Revision 18-Jul-2012 1 Changes First release. Doc ID 023446 Rev 1 17/18 STB18N65M5, STD18N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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