STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N N-channel 500 V, 0.1 Ω typ., 22 A MDmesh™ II Power MOSFET in D²PAK, TO-220FP, TO-220, TO-247 packages Datasheet — production data Features TAB Order codes VDS RDS(on) max. PTOT ID 2 3 1 STB32NM50N STF32NM50N STP32NM50N STW32NM50N 500 V 0.13 Ω 190 W 35 W 190 W 190 W 22 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 3 D²PAK 1 2 TO-220FP TAB 3 1 2 2 3 1 TO-220 TO-247 Applications ■ Switching applications Figure 1. Internal schematic diagram Description $OR4!" These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. ' 3 !-V Table 1. Device summary Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N Marking Package Packaging 32NM50N D2PAK TO-220FP TO-220 TO-247 Tape and reel Tube Tube Tube August 2012 This is information on a product in full production. Doc ID 023436 Rev 1 1/21 www.st.com 21 Contents STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 .............................................. 9 Doc ID 023436 Rev 1 STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit D²PAK, TO-220, TO-247 TO-220FP VDS Drain-source voltage 500 VGS Gate- source voltage ± 25 V V (1) ID Drain current (continuous) at TC = 25 °C 22 ID Drain current (continuous) at TC = 100 °C 13.86 13.86 (1) A Drain current (pulsed) 88 88 A Total dissipation at TC = 25 °C 190 35 W IDM (2) PTOT 22 A IAR Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) 7 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 340 mJ Peak diode recovery voltage slope 15 V/ns dv/dt(3) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature TJ 2500 V - 55 to 150 °C Max. operating junction temperature 150 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 22 A, di/dt ≤ 400 A/µs, VDS peak ≤V(BR)DSS, VDD ≤ 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Rthj-pcb(1) 1. D²PAK TO-220FP TO-220 TO-247 Unit 0.66 Thermal resistance junction-ambient max Thermal resistance junction-pcb max 3.6 0.66 62.5 50 °C/W 30 When mounted on FR-4 board of 1 inch², 2 oz Cu. Doc ID 023436 Rev 1 3/21 Electrical characteristics 2 STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Value Symbol Parameter Test conditions Unit Min. Drain-source V(BR)DSS breakdown voltage (VGS = 0) ID = 1 mA Typ. Max. 500 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 500 V VDS = 500 V, TC = 125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 25 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 11 A 0.1 0.13 Ω Table 5. Symbol 2 Dynamic Parameter Test conditions Min. Typ. Max. Unit Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 1973 179 9.7 - pF pF pF Coss eq.(1) Equivalent output capacitance VGS = 0, VDS = 0 to 400 V - 325 - pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD =250 V, ID = 11 A RG = 4.7 Ω, VGS = 10 V (see Figure 23), (see Figure 18) - 21.5 9.5 110 23.6 - ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 22 A, VGS = 10 V, (see Figure 19) - 62.5 8.6 33 - nC nC nC Gate input resistance f=1MHz Gate DC Bias=0 Test signal level=20 mV Open drain - 3.8 - Ω Ciss Coss Crss Rg 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/21 Doc ID 023436 Rev 1 STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Table 6. Symbol Electrical characteristics Source drain diode Parameter Test conditions Min. Typ. Max. Unit - 22 88 A A 1.6 V ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 22 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22 A, VDD = 60 V di/dt=100 A/µs (see Figure 20) - 328 5 30.5 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22 A,VDD = 60 V di/dt=100 A/µs, TJ = 150 °C (see Figure 20) - 392 6.5 32.8 ns nC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Doc ID 023436 Rev 1 5/21 Electrical characteristics STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK and Figure 3. TO-220 Thermal impedance for for D2PAK and TO-220 AM13087v1 ID (A) ai DS (o Op Lim erat ite ion d b in y m this ax ar R e n) s Tj=150°C Tc=25°C Single pulse 10 10µs 100µs 1ms 10ms 1 0.1 0.1 Figure 4. 10 1 100 Safe operating area for TO-220FP Thermal impedance for TO-220FP Figure 7. Thermal impedance for TO-247 on ) is Tj=150°C Tc=25°C Single pulse D S( O Li per m at ite io d ni by n m this ax a R rea 1 Figure 5. AM13088v1 ID (A) 10 VDS(V) 10µs 100µs 1ms 10ms 0.1 0.01 0.1 Figure 6. 10 1 100 Safe operating area for TO-247 AM13089v1 ID (A) 10µs DS (o n) a is Tj=150°C Tc=25°C Single pulse Op Lim era ite tion d by in th m is ax ar R e 10 VDS(V) 100µs 1ms 10ms 1 0.1 0.1 6/21 1 10 100 VDS(V) Doc ID 023436 Rev 1 STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Figure 8. Output characteristics Figure 9. AM13090v1 ID (A) Electrical characteristics Transfer characteristics AM13091v1 ID(A) VGS=10V VDS=21V 60 60 6V 50 50 40 40 30 30 5V 20 20 10 10 4V 0 0 5 10 20 15 25 30 VDS(V) 0 0 2 4 6 8 10 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance AM13092v1 VGS (V) VDS VDS (V) VDD=400V ID=22A 12 AM13093v1 RDS(on) (Ω) VGS=10V 400 0.104 350 10 300 8 250 6 200 0.102 0.100 150 4 100 2 0.098 0.096 50 0 0 10 20 30 40 50 60 0 Qg(nC) Figure 12. Capacitance variations 5 10 15 20 ID(A) Figure 13. Output capacitance stored energy AM14903v1 C (pF) 0.094 0 AM14904v1 Eoss (µJ) 10 9 10000 8 Ciss 1000 7 6 5 100 Coss 4 3 10 Crss 2 1 1 0.1 1 10 100 VDS(V) Doc ID 023436 Rev 1 0 0 100 200 300 400 500 VDS(V) 7/21 Electrical characteristics STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Figure 14. Normalized gate threshold voltage vs temperature AM14905v1 VGS(th) (norm) ID=250µA Figure 15. Normalized on-resistance vs temperature AM14906v1 RDS(on) ID=11A (norm) 1.10 2.1 1.9 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Normalized VDS vs temperature AM09028v1 VDS (norm) ID=1mA 1.10 1.08 0.5 -50 -25 0 25 50 75 100 TJ(°C) Figure 17. Source-drain diode forward characteristics AM14908v1 VSD (V) 1.4 TJ=-50°C 1.2 1.06 TJ=25°C 1.0 1.04 1.02 0.8 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.94 0.92 -50 -25 8/21 0.2 0 0 25 50 75 100 TJ(°C) Doc ID 023436 Rev 1 0 2 4 6 8 10 12 14 16 18 20 22 ISD(A) STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 22. Unclamped inductive waveform AM01471v1 Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 023436 Rev 1 10% AM01473v1 9/21 Package mechanical data 4 STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 7. D²PAK (TO-263) mechanical data mm Dim. Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/21 Typ. 0.4 0° 8° Doc ID 023436 Rev 1 STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Package mechanical data Figure 24. D²PAK (TO-263) drawing 0079457_T Figure 25. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimensions are in millimeters Doc ID 023436 Rev 1 11/21 Package mechanical data Table 8. STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N TO-220FP mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/21 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 023436 Rev 1 STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Package mechanical data Figure 26. TO-220FP drawing 7012510_Rev_K_B Doc ID 023436 Rev 1 13/21 Package mechanical data Table 9. STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/21 Typ. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 023436 Rev 1 STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Package mechanical data Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 023436 Rev 1 15/21 Package mechanical data Table 10. STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N TO-247 mechanical data mm. Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 16/21 Typ. 5.45 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 Doc ID 023436 Rev 1 5.50 5.70 STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Package mechanical data Figure 28. TO-247 drawing 0075325_G Doc ID 023436 Rev 1 17/21 Packaging mechanical data 5 STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Packaging mechanical data Table 11. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 18/21 Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 023436 Rev 1 Max. 330 13.2 26.4 30.4 STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Packaging mechanical data Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 30. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 023436 Rev 1 19/21 Revision history 6 STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Revision history Table 12. 20/21 Document revision history Date Revision 01-Aug-2012 1 Changes Initial release. Doc ID 023436 Rev 1 STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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