STTH2R02-Y Automotive ultrafast recovery diode Features ■ very low conduction losses ■ negligible switching losses ■ low forward and reverse recovery times ■ high junction temperature ■ AEC-Q101 qualified A K A Description K The STTH2R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. SMB STTH2R02UY Packaged in SMB, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for automotive applications. October 2010 Table 1. Doc ID 17934 Rev 1 Device summary Symbol Value IF(AV) 2A VRRM 200 V Tj (max) 175 °C VF (typ) 0.7 V trr (typ) 15 ns 1/8 www.st.com 8 Characteristics 1 STTH2R02-Y Characteristics Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IFRM Repetitive peak forward current IF(RMS) Unit 200 V 60 A 60 A tp = 5 µs, F = 5 kHz Forward rms current IF(AV) Average forward current, δ = 0.5 Tc = 90 °C 2 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A Tstg Storage temperature range -65 to +175 °C Operating junction temperature range -40 to +175 °C Tj Table 3. Thermal parameters Symbol Rth(j-c) Table 4. Symbol IR(1) Parameter VF(2) Value Unit 30 °C/W Junction to case Static electrical characteristics Parameter Test conditions Reverse leakage current Tj = 25 °C Tj = 125 °C Tj = 25 °C Forward voltage drop VR = VRRM IF = 6 A Tj = 25 °C Tj = 100 °C 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.68 x IF(AV) + 0.06 IF2(RMS) Doc ID 17934 Rev 1 Min. Typ. Max. - - 3 - 2 20 - - 1.20 - 0.89 1.0 - 0.76 0.85 - 0.70 0.80 Unit µA V IF = 2 A Tj = 150 °C 2/8 Value STTH2R02-Y Characteristics Table 5. Dynamic characteristics Symbol Parameter trr Test conditions Min. Typ Max. IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25 °C - 23 30 IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25 °C - 15 20 Reverse recovery current IF = 2 A, dIF/dt = -200 A/µs, VR = 160 V, Tj = 125 °C - 3 4 A Forward recovery time IF = 2 A, dIF/dt = 100 A/µs VFR = 1.1 x VFmax, Tj = 25 °C - 40 - ns Forward recovery voltage IF = 2 A, dIF/dt = 100 A/µs, Tj = 25 °C - 2.0 - V Reverse recovery time IRM tfr VFP Figure 1. Peak current versus duty cycle Figure 2. IM(A) Unit ns Forward voltage drop versus forward current (typical values) IFM(A) 100 50 T IM δd=tp/T 80 tp 40 60 30 20 40 P=5W Tj=150°C P=2W P=1W Tj=25°C 10 20 δ VFM(V) 0 0 0.0 0.0 Figure 3. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.5 1.0 1.5 2.0 2.5 1.0 Forward voltage drop versus forward current (maximum values) Figure 4. Relative variation of thermal impedance junction to case versus pulse duration Zth(j-a) /Rth(j-a) IFM(A) 50 1.0 SMA Scu=1cm² 0.9 40 0.8 0.7 30 0.6 0.5 Tj=150°C 20 0.4 Tj=25°C 0.3 10 0.2 0.1 VFM(V) 0 Single pulse tP(ms) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 1.E-02 Doc ID 17934 Rev 1 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 3/8 Characteristics Figure 5. STTH2R02-Y Junction capacitance versus reverse applied voltage (typical values) Figure 6. C(pF) Reverse recovery charges versus dIF/dt (typical values) QRR(nC) 100 60 F=1MHz Vosc=30mVRMS Tj=25°C IF=2A VR=160V 50 40 Tj=125°C 10 30 20 Tj=25°C 10 VR(V) dIF/dt(A/µs) 1 0 1 10 Figure 7. 100 1000 10 100 Reverse recovery time versus dIF/dt Figure 8. (typical values) tRR(ns) 1000 Peak reverse recovery current versus dIF/dt (typical values) IRM(A) 60 6 IF=2A VR=160V IF=2A VR=160V 50 5 40 4 30 3 Tj=125°C Tj=125°C 20 2 1 Tj=25°C 10 Tj=25°C dIF/dt(A/µs) dIF/dt(A/µs) 0 0 10 100 Figure 9. 1000 Dynamic parameters versus junction temperature 10 100 1000 Figure 10. Thermal resistance, junction to ambient, versus copper surface under each lead Rth(j-a) (°C/W) QRR; IRM [T j] / Q RR; IRM [T j=125°C] 120 1.4 IF=2A VR=160V 1.2 Epoxy printed circuit board, copper thickness = 35 µm 100 1.0 80 IRM 0.8 60 0.6 QRR 40 0.4 20 0.2 Tj(°C) SCU(cm²) 0.0 0 25 4/8 50 75 100 125 150 0.0 Doc ID 17934 Rev 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 STTH2R02-Y 2 Ordering information scheme Ordering information scheme Figure 11. Ordering information scheme STTH 2 R 02 XX Ultrafast switching diode Average forward current 2=2A Model R Repetitive peak reverse voltage 02 = 200 V Package U = SMB in tape and reel Y = Automotive grade Doc ID 17934 Rev 1 5/8 Package information 3 STTH2R02-Y Package information ● Epoxy meets UL94, V0 ● Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. SMB dimensions Dimensions E1 Ref. D E c A1 A2 b L Millimeters Min. Typ. Max. A1 1.90 2.15 2.45 0.075 0.085 0.096 A2 0.05 0.15 0.20 0.002 0.006 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016 E 5.10 5.40 5.60 0.201 0.213 0.220 E1 4.05 4.30 4.60 0.159 0.169 0.181 D 3.30 3.60 3.95 0.130 0.142 0.156 L 0.75 1.15 1.60 0.030 0.045 0.063 Figure 12. SMB footprint (dimensions in mm) 5.25 2.22 1.75 6/8 1.75 Inches 1.75 Doc ID 17934 Rev 1 Min. Typ. Max. STTH2R02-Y 4 Ordering information Ordering information Table 7. 5 Ordering information Order code Marking Package Weight Base qty Delivery mode STTH2R02UY R2UY SMB 0.12 g 2500 Tape and reel Revision history Table 8. Document revision history Date Revision 20-Oct-2010 1 Changes Initial release. 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