STTH5L04DEE Turbo 2 ultrafast recovery diode Datasheet production data Features NC ■ Very low switching losses ■ High frequency and high pulse current operation ■ Low thermal resistance ■ High junction temperature ■ ECOPACK®2 compliant component A K A A NC A A A A A A NC Description K K The STTH5L04 series uses ST’s new 400 V planar Pt doping technology. The STTH5L04 is specially suited for switching mode base drive and transistor circuits. PowerFLAT(3.3 x 3.3) STTH5L04DEE-TR Packaged in PowerFLAT™, this device is intended for use in low profile applications. Table 1. Device summary Symbol Value IF(AV) 5A VRRM 400 V Tj (max) 150 °C VF (typ) 0.85 V TRR (typ) 35 ns TM: PowerFLAT is a trademark of STMicroelectronics September 2012 This is information on a product in full production. Doc ID 023261 Rev 1 1/8 www.st.com 8 Characteristics 1 STTH5L04DEE Characteristics Table 2. Absolute ratings (limiting values Tamb = 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V IF(RMS) Forward rms current 15 A 5 A 60 A -65 to +150 °C 150 °C Value Unit Tc = 120 °C, = 0.5 IF(AV) Average forward current IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range Tj Table 3. Maximum operating junction temperature Thermal resistance Symbol Parameter Rth(j-c) Junction to case 4.5 °C/W Rth(j-a) Junction to ambient on printed circuit board (with recommended footprint dimension, copper thickness = 35 µm) 250 °C/W Table 4. Symbol Static electrical characteristics Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Min. VR = VRRM - Max. Unit 2.5 µA 25 µA - 2.5 1.05 1.25 - 0.85 1.05 IF = 5A Tj = 150 °C Typ. V 1. Pulse test: tp = 5 ms, < 2% 2. Pulse test: tp = 380 µs, < 2% To evaluate the conduction losses use the following equation: P = 0.85 x IF(AV) + 0.04 x IF2(RMS) Table 5. Symbol IRM Sfactor trr tfr VFP 2/8 Dynamic electrical characteristics Parameter Test conditions Reverse recovery current I = 5A, VR = 320 V, Tj = 125 °C F dlF/dt = -200 A/µs Softness factor Reverse recovery time Forward recovery time Forward recovery voltage Tj = 25 °C Min. Typ. Max. Unit - 8 - 0.7 IF = 1A, VR = 30 V, dlF/dt = -50 A/µs IF = 1A, VR = 30 V, dlF/dt = -100 A/µs 43 Doc ID 023261 Rev 1 A 60 ns - 35 Tj = 25 °C IF = 5 A, VFR = 1.2 V Tj = 25 °C dlF/dt = 100 A/µs 11 - 2 50 110 ns 3 V STTH5L04DEE Figure 1. 8 Characteristics Average forward power dissipation Figure 2. versus average forward current Forward voltage drop versus forward current IFM(A) PF(AV)(W) δ = 0.2 δ = 0.1 7 100.0 δ = 0.5 δ = 0.05 6 Tj=150 °C (Typical values) δ=1 5 10.0 Tj=150 °C (Maximum values) Tj=25 °C (Maximum values) 4 3 1.0 T 2 1 IF(AV)(A) δ =tp/T 0 0 1 Figure 3. 2 3 4 VFM(V) tp 0.1 5 6 7 0.0 0.2 0.4 Relative variation of thermal Figure 4. impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Peak reverse recovery current versus dlF/dt (typical values) IRM(A) 1.0 16 0.9 14 0.8 IF=I F(AV) VR=320 V Tj=125 °C 12 0.7 10 0.6 8 0.5 0.4 0.3 6 Single pulse 4 0.2 2 0.1 tp(s) 0.0 1.E-04 1.E-03 Figure 5. dIF/dt(A/µs) 0 1.E-02 1.E-01 0 1.E+00 50 100 Reverse recovery time versus dlF/dt Figure 6. (typical values) tRR(ns) 150 200 250 300 350 400 450 500 Reverse recovery charges versus dlF/dt (typical values) Q RR(nC) 400 180 IF=I F(AV) VR=320 V Tj=125 °C 160 140 IF=I F(AV) VR=320 V Tj=125 °C 360 320 280 120 240 100 200 80 160 60 120 40 80 20 40 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 0 50 Doc ID 023261 Rev 1 100 150 200 250 300 350 400 450 500 3/8 Characteristics Figure 7. STTH5L04DEE Reverse recovery softness factor versus dlF/dt (typical values) SFACTOR Figure 8. Relative variation of dynamic parameters versus junction temperature 1.4 1.4 IF=I F(AV) VR=320 V Tj=125 °C 1.2 1.2 SFACTOR 1.0 1.0 0.8 0.8 IRM 0.6 0.6 QRR 0.4 0.4 IF=I F(AV) VR=320 V Reference: T j=125 °C 0.2 0.2 T j(°C) dIF/dt(A/µs) 0.0 0.0 0 50 Figure 9. 100 150 200 250 300 350 400 450 25 500 Transient peak forward voltage versus dlF/dt (typical values) 50 75 100 125 Figure 10. Forward recovery time versus dlF/dt (typical values) VFP (V) tf r (ns) 140 7 IF=I F(AV) Tj=125 °C 6 IF=I F(AV) VFR=1.2V Tj=125 °C 120 5 100 4 80 3 60 2 40 20 1 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 0 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values) 50 100 150 200 250 300 350 400 450 500 Figure 12. Thermal resistance junction to ambient versus copper surface under tab C(pF) Rth(j-a)(°C/W) 100 250 F=1 MHz VOSC=30 mVRMS Tj=25 °C PowerFLAT (3.3x3.3) epoxy printed board FR4, copper thickness=35µm 200 150 10 100 50 SCu(cm²) VR(V) 0 1 1 4/8 10 100 1000 0 Doc ID 023261 Rev 1 1 2 3 4 5 6 7 8 9 10 STTH5L04DEE 2 Package information Package information ● Epoxy meets UL94,V0 ● Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 13. PowerFLAT (3.3 x 3.3) dimensions (definitions) Exposed pad L1 b L E E2 E/2 A3 nc nc D/2 e/2 D D2 e a k a k A Index area (D/2 x E/2) 0.10 mm Ref. 0.10 mm Ref. Projection 0.20 mm Ref. Table 6. PowerFLAT (3.3 x 3.3) dimensions (values) Dimensions Ref. Millimeters Min. A Typ. 0.95 A3 Inches Max. Min. 1.0 0.037 0.2 Typ. Max. 0.039 0.008 b 0.29 0.34 0.39 0.011 0.013 0.015 D 3.20 3.30 3.40 0.126 0.130 0.134 D2 2.24 2.29 2.34 0.088 0.090 0.092 E 3.20 3.30 3.40 0.126 0.130 0.134 E2 1.66 1.71 1.76 0.065 0.067 0.069 e 0.65 0.026 L 0.40 0.016 L1 0.45 0.50 0.55 Doc ID 023261 Rev 1 0.018 0.20 0.22 5/8 Package information STTH5L04DEE Figure 14. Footprint (dimensions in mm) 2.39 1.195 2.21 3.4 0.59 0.6 0.65 0.325 6/8 Doc ID 023261 Rev 1 0.44 STTH5L04DEE 3 Ordering information Ordering information Table 7. 4 Ordering information Order code Marking STTH5L04DEE-TR TH5L04 Package PowerFLAT (3.3 x 3.3) Weight 34 mg Base qty Delivery mode 3000 Tape and reel 13” reel Revision history Table 8. Document revision history Date Revision 11-Sep-2012 1 Changes First issue. Doc ID 023261 Rev 1 7/8 STTH5L04DEE Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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