TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ITO-220AB MECHANICAL DATA Case : ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal：Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity : As marked Mounting torque : 5 in-lbs. max. Weight：1.7 gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) SYMBOL TSF20H100C TSF20H120C TSF20H150C PARAMETER VRRM Maximum repetitive peak reverse voltage per device Maximum average forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode 100 120 UNIT 150 V 20 IF(AV) A 10 IFSM 110 A dV/dt 10000 V/μs Isolation voltage from terminal to heatsink t = 1 min VAC 1500 V Breakdown voltage ( IR =1.0mA, Ta =25°C ) VBR Voltage rate of change (Rated VR) IF = 5A Instantaneous forward voltage per diode ( Note1 ) IF = 10A IF = 5A IF = 10A Instantaneous reverse current per diode at rated reverse voltage TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C VF VF IR Typical thermal resistance per diode RθjC Operating junction temperature range TJ Storage temperature range TSTG 100 150 120 V Typ. Max. Typ. Max Typ. Max. 0.64 - 0.68 - 0.73 - 0.74 0.81 0.78 0.87 0.81 1.10 0.55 - 0.56 - 0.59 - 0.63 0.70 0.63 0.69 0.67 0.73 - 200 - 250 - 150 1.5 10 5 15 3 10 2.5 4.9 3.8 V μA mA O C/W - 55 to + 150 O C - 55 to + 150 O C Note 1: Pulse Test with Pulse Width=300us, 1% Duty Cycle Document Number：DS_DS_D1401006 Version:D14 TSF20H100C thru TSF20H150C Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE PACKAGE PACKING TSF20HXXXC C0 ITO-220AB 50 / Tube Note 1: "xxx" defines voltage from 100V (TSF20H100C) to 150V (TSF20H150C) EXAMPLE PREFERRED P/N PART NO. PACKING CODE TSF20H120C C0 TSF20H120C C0 TSF20H120C C0G TSF20H120C C0 GREEN COMPOUND DESCRIPTION CODE Green compound G RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG. 2 TYPICAL FORWARD CHARACTERISTICS FIG. 1 FORWARD CURRENT DERATING CURVE 100 30 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) TSF20H100C 25 TSF20H100C 20 15 10 TSF20H120C WITH HEATSINK 4in x 6in x 0.25in Al-Plate 5 TSF20H150C 0 0 25 50 75 100 125 10 Tj=150oC 1 Tj=125oC Tj=100oC 0.1 Tj=25oC 0.01 150 0 0.2 CASE TEMPERATURE (oC) 0.6 0.8 1 FORWARD VOLTAGE (V) FIG. 3 TYPICAL FORWARD CHARACTERISTICS FIG. 4 TYPICAL FORWARD CHARACTERISTICS 100 100 10 INSTANTANEOUS FORWARD CURRENT (A) TSF20H120C INSTANTANEOUS FORWARD CURRENT (A) 0.4 Tj=150oC 1 Tj=125oC Tj=100oC 0.1 TSF20H150C 10 Tj=150oC 1 Tj=125oC Tj=100oC 0.1 Tj=25oC Tj=25oC 0.01 0.01 0 0.2 0.4 0.6 FORWARD VOLTAGE (V) Document Number：DS_DS_D1401006 0.8 1 0 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGE (V) Version:D14 TSF20H100C thru TSF20H150C Taiwan Semiconductor FIG. 5 TYPICAL REVERSE CHARACTERISTICS FIG. 6 TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS REVERSE CURRENT (mA) 100 TSF20H100C 10 Tj=150oC Tj=125o 1 0.1 Tj=100oC 0.01 Tj=25oC 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 TSF20H120C Tj=150oC 10 Tj=125oC 1 Tj=100oC 0.1 0.01 Tj=25oC 0.001 0.0001 10 20 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) 50 60 70 80 90 100 FIG. 8 TYPICAL JUNCTION CAPACITANCE 10 10000 TSF20H150C Tj=150oC Tj=125oC CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (mA) 40 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 7 TYPICAL REVERSE CHARACTERISTICS 1 30 Tj=100oC 0.1 0.01 1000 100 Tj=25oC 0.001 f=1.0MHz Vslg=50mVp-p 0.0001 10 20 30 40 50 60 70 80 90 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 10 0.1 1 10 100 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DIM. Unit(mm) Unit(inch) Min Max Min Max A 4.30 4.70 0.169 0.185 B 2.50 3.16 0.098 0.124 C 2.30 2.96 0.091 0.117 D 0.46 0.76 0.018 0.030 E 6.30 6.90 0.248 0.272 F 9.60 10.30 0.378 0.406 G 3.00 3.40 0.118 0.134 H 0.95 1.45 0.037 0.057 I 0.50 0.90 0.020 0.035 J 2.40 3.20 0.094 0.126 K 14.80 15.50 0.583 0.610 L - 4.10 - 0.161 M 12.60 13.80 0.496 0.543 N - 1.80 - 0.071 O 2.41 2.67 0.095 0.105 MARKING DIAGRAM P/N = Specific Device Code YWW = Date Code F = Factory Code Document Number：DS_DS_D1401006 Version:D14