TSM4459 30V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain -30 Features ID (A) 5.2 @ VGS = -10V -17 9.5 @ VGS = -4.5V Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● DC-DC Converter ● Battery Power System Ordering Information Part No. Package Packing TSM4459CS RLG SOP-8 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product P-Channel MOSFET Absolute Maximum Rating (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol Limit Unit VDS -30 V VGS ±20 V o TA = 25 C Continuous Drain Current ID o TA = 70 C Pulsed Drain Current IDM o Maximum Power Dissipation Note a. TA = 25 C PD o TA = 70 C Operating Junction Temperature A -13.6 -68 A 2.5 W 1.6 +150 o TJ, TSTG - 55 to +150 o Symbol Limit TJ Operating Junction and Storage Temperature Range -17 C C Thermal Performance Parameter Note a. Junction to Ambient Thermal Resistance RӨJA Notes: 2 a. The Device Surface Mounted on 1inch FR4 Board with 2oz copper. 1/4 50 Unit o C/W Version: A12 TSM4459 30V P-Channel MOSFET Electrical Specifications (TA = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit VGS = 0V, ID = -250uA BVDSS -30 -- -- V Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -1 -- -3 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = -30V, VGS = 0V IDSS -- -- -1.0 µA -- 4 5.2 -- 7 9.5 VSD -- 0.8 -- Qg -- 78.4 -- Qgs -- 25.1 -- Qgd -- 38.7 -- Rg -- 2.88 -- Ciss -- 6205 -- Coss -- 963 -- Crss -- 330 -- td(on) -- 75.2 -- tr -- 33.8 -- td(off) -- 275 -- tf -- 92.1 -- Static Drain-Source Breakdown Voltage a Drain-Source On-State Resistance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = -10V, ID = -9A VGS = -4.5V, ID = -9A IS = -18A, VGS = 0V VDS = -24V, ID = -17A, VGS = -4.5V f = 1.0MHz VDS = -15V, VGS = 0V, f = 1.0MHz RDS(ON) mΩ V nC Ω pF Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = -15V, RL = 15Ω, VGEN = -10V, RG = 4.7Ω Turn-Off Fall Time Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% 2/4 nS Version: A12 TSM4459 30V P-Channel MOSFET SOP-8 Mechanical Drawing DIM A B C D F G K M P R 3/4 SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0º 7º 0º 7º 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019 Version: A12 TSM4459 30V P-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A12