UNISONIC TECHNOLOGIES CO., LTD UT3310 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3310 is a P-channel enhancement mode Power MOSFET. The UTC UT3310 uses advanced technology to provide customers with fast switching, low on-resistance and cost-effectiveness. The UTC UT3310 is generally applied in low voltage and battery power applications. FEATURES * Gate Drive Capability: 2.5V * Simple Drive Requirement SYMBOL D(2) G(1) S(3) ORDERING INFORMATION Ordering Number Package UT3310G-TN3-R TO-252 www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 G Pin Assignment 2 D 3 S Packing Tape Reel 1 of 3 QW-R502-388.a UT3310 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS -20 V Gate to Source Voltage VGSS ±12 V Continuous Drain Current (TA =25°C, VGS=10V) ID -10 A Pulsed Drain Current IDM -24 A Total Power Dissipation (TA =25°C) PD 25 W Linear Derating Factor 0.01 W/°C Junction Temperature TJ 150 ℃ Ambient Operating Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA θJC Junction to Ambient Junction to Case RATINGS 110 5.0 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS VGS=0V, ID=-250µA Reference to 25°C, ID=-1mA VDS=-20V,VGS=0V VDS=0V ,VGS=±12V -20 VDS= VGS, ID=-250µA VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A -0.5 DYNAMIC PARAMETERS Input Capacitance CISS VDS=-6V,VGS=0V,f =1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note2) QG VDS=-6V, VGS=-5V, ID=-2.8A Gate-Source Charge QGS Gate-Drain Charge QGD Turn-ON Delay Time (Note2) tD(ON) VDS=-6V,VGS=-5V, ID=-1A Turn-ON Rise Time tR RG=6Ω, RD=6Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Source Current ( Body Diode ) IS VD=VG=0V , VS=-1.2V Pulsed Source Current ( Body Diode ) ISM (Note1) Drain-Source Diode Forward Voltage VSD IS =-10A, VGS=0V (Note2) Notes:1. Pulse width limited by safe operating area. 2. Pulse width ≤300us , duty cycle ≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -1 ±100 V V/°C µA nA 150 250 V mΩ mΩ -0.1 300 180 60 pF pF pF 6 1.5 0.6 25 60 70 60 nC nC nC ns ns ns ns -10 -24 -1.2 A A V 2 of 3 QW-R502-388.a UT3310 Preliminary Power MOSFET TYPICAL CHARACTERISTICS Gate Charge Circuit Gate Charge Waveform VG VDS D QG -5V 0.3×Rated VDS to the oscilloscope G ID QGS QGD S -1 ~ -3mA IG VGS Charge Q UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-388.a