CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. MARKING CODE: CC8 APPLICATIONS: • Load switch/Level shifting • Battery charging • Boost switch • Electro-luminescent backlighting FEATURES: • ESD protection up to 1800V (Human Body Model) • 350mW power dissipation • Very low rDS(ON) • Low threshold voltage • Logic level compatible • Small, SOT-563 surface mount package • Complementary dual N-Channel device: CMLDM7005 MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage SYMBOL VDS 20 VGS ID 8.0 V 650 mA IS IDM PD 250 mA 1.0 A 350 mW PD PD 300 mW 150 mW TJ, Tstg ΘJA -65 to +150 °C 357 °C/W SOT-563 CASE Gate-Source Voltage Continuous Drain Current (Steady State - Note 1) Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 2) Operating and Storage Junction Temperature Thermal Resistance (Note 1) UNITS V ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IGSSF, IGSSR VGS=4.5V, VDS=0 10 IDSS VDS=16V, VGS=0 100 BVDSS VGS(th) VGS=0, ID=250μA VDS=VGS, ID=250μA VSD rDS(ON) VGS=0, IS=250mA VGS=4.5V, ID=350mA rDS(ON) VGS=2.5V, ID=300mA VGS=1.8V, ID=150mA rDS(ON) 20 UNITS μA nA V 0.5 1.0 0.25 0.37 V 1.1 V 0.36 Ω 0.5 Ω 0.8 Ω Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 R4 (5-June 2013) CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP UNITS gFS VDS=10V, ID=200mA 0.2 S Crss VDS=16V, VGS=0, f=1.0MHz 25 pF Ciss Coss Qg(tot) Qgs Qgd ton toff VDS=16V, VGS=0, f=1.0MHz VDS=16V, VGS=0, f=1.0MHz VDS=10V, VGS=4.5V, VDS=10V, VGS=4.5V, VDS=10V, VGS=4.5V, ID=200mA ID=200mA ID=200mA VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω 100 pF 21 pF 1.2 nC 0.24 nC 0.36 38 nC ns 48 ns SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: CC8 R4 (5-June 2013) w w w. c e n t r a l s e m i . c o m CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R4 (5-June 2013) w w w. c e n t r a l s e m i . c o m