NJSEMI 111RKI

Una.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
110/111RKI SERIES
PHASE CONTROL THYRISTORS
Stud Version
Features
High current and high surge ratings
Hermetic ceramic housing
110A
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
T(AV)
@T C
I2t
TJ
110
A
90
°C
A
@50Hz
2080
A
@60Hz
2180
A
@50Hz
21.7
KA2s
@60Hz
19.8
KA2S
400 to 1200
V
VDR«'VRRM
<q
Units
172
'T(RMS)
'TSM
110/111RKI
typical
110
MS
-40 to 140
"C
Quality Semi-Conductors
case style
TO-209AC (TO-94)
., LJnc.
TELEPHONE: (973) 376-2922
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
(212) 227-6005
FAX: (973) 376-8960
Blocking
Parameter
dv/dt
Maximum critical rate of rise of
off-state voltage
'RRM
IDRM
Max-
110/111RK1
Pealt reuerse and off-state
leakage current
Units Conditions
500
V/us
20
mA
Tj = Tj max. linear to B0% rated VonM '
L =• TJ ma*' rated VDHM'VRR* aPP|ie(1
Triggering
Parameter
110/111RKI
PGM
Maximum peak gate power
12
PG(AV)
Maximum average gate power
3.0
'QM
Max. peak positive gate current
3.0
+VOM
Maximum peak positive
Maximum peak negative
TYP.
Tj = Tj max. t < 6ms
V
T j - TJ, max, t p < 5ms
DC gate current required
180
lo trigger
80
MAX.
Tj = - 40'C
120
mA
T = 25'C
V
Tj = 14Q'C
T =-40°C
''
T j = 25'C
40
VGT
DC gate voltage required
2.5
to trigger
1.6
2
1
IGD
VGD
Tj - Tj max, f = SOHz, d% = 50
A
10
gate voltage
IGT
Tj = Tj max, I < 5ms
w
20
gate voltage
-VGM
Units Conditions
Tj = 140'C
DC gate current not to trigger
6.0
DC gate voltage not to trigger
Max. required gate trigger/ curvoltage are the lowest value
which wiH trigger all units 12V
anode-to-cathode applied
renl/
0.25
mA
V
Tj = Tj max
Max. gate current/ voltage not to
trigger is the max. value which
win not trigger any unit with rated
VDRM anode-to-cathode applied
Thermal and Mechanical Specification
Parameter
110/1 11RKI
Tj
Max. operating temperature range
-4010140
T .
Max. storage temperature range
-4010160
RmJC
Units
•c
Max. thermal resistance,
DC operation
0.27
junction to case
R([lCS
K/W
Max. thermal resistance,
Mounting surface, smooth, flat and greased
0.1
case to heatsink
T
Conditions
Mounting torque, ±10%
Non lubricated threads
15.5
(137)
14
Mm
(Ibf-in) Lubricated threads
(120)
wt
Approximate weight
Case style
130
g
TO-209AC(TO-94)
Quality Semi-Conductors
See Outline Table
<$E.mL~(2on.auci o'i.
, Dna.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
VDRM^RW
max-
VRSM , maximum non-
repetitive
peak and off-state voltage
V
V
40
400
500
80
800
900
120
1200
1300
110/111RKI
WRRM [email protected] Tj = Tj max.
inA
repetitive peak voltage
Code
20
On-state Conduction
110/111RKI
Parameter
'TIAVI
Max- auer39e
on-state current
@ Case temperature
'TIRUSI
ITSM
I2t
! 2 Vt
Max- RMS on-sta'e
Units Conditions
110
A
90
•c
DC @ 83"C case temperature
172
current
Max. peak, one-cycle
2080
non-repetitive surge current
2180
Maximum I2t for fusing
t = 10ms
No voltage
t = 8.3ms
reapplied
1750
t=10ms
100%VBRU
1830
t = 8.3ms
reapplied
Sinusoidal half wave,
21.7
t * 1 Qms
No voltage
Initial Tj = Tj max.
19.8
t - 8.3ms
reapplied
15.3
t=10ms
100%VRRM
14.0
t = 8.3ms
reapplied
217
Maximum l2\/t for fusing
180* conduction, half sine wave
A
KA2s
KA2\'s
t = 0.1 to 10ms. no voltage reapplied
V T(TO)] Low level value of threshold
(16.7% x i x IT(AV) < 1 < * x IT(AV)), Tj = Tj max.
0.82
voltage
V
V T(TO)2 High level value of threshold
1.02
(l> nxl^JJ^Tj max.
voltage
r (1
Low level value of on-state
(16.7% x it x IT(AV) < I < n x IT(AV)), Tj ^ Tj max.
2.16
slope resistance
r|2
mSJ
High level value of on-state
1.70
(l^xl^.VTjma,
slope resistance
VTU
Max. on-state voltage
1.57
IH
Maximum holding current
200
IL
Typical latching current
400
V
mA
I k = 350A, Tj ~ Tj max., 1 = 10ms sine pulse
Tj = 25'C, anode supply 6V resistive load
Switching
Parameter
di/dt
110/111RK1
Max. non-repetitive rate of nse
of turned-an current
td
Typical delay time
300
Units Conditions
A/MS
Typical turn-off time
Quality Semi-Conductors
110
Tj = Tj max, anode voltage S 80% VDRM
Gate current 1A, di /dt = 1 A/ps
1
us
t
Gate drive 20V, 20ft, tr £ 1 1JS
Vd
= °-87%vORM.V2s'c
ITM = 50A. Tj = Tj max., di/dt = -5A/us, VB = 50V
dv/dt = 20V/M3, Gate 0V 2SH