110RKI...PbF/111RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A FEATURES • High current and high surge ratings RoHS • Hermetic ceramic housing COMPLIANT • RoHS compliant • Lead (Pb)-free • Designed and qualified for industrial level TO-209AC (TO-94) TYPICAL APPLICATIONS • DC motor controls PRODUCT SUMMARY IT(AV) • Controlled DC power supplies 110 A • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC VALUES UNITS 110 A 90 °C 172 IT(RMS) ITSM I2 t 50 Hz 2080 60 Hz 2180 50 Hz 21.7 60 Hz 19.8 VDRM/VRRM Typical tq TJ A kA2s 400 to 1200 V 110 µs - 40 to 140 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 40 400 500 80 800 900 120 1200 1300 110RKI 111RKI Document Number: 94379 Revision: 11-Aug-08 For technical questions, contact: [email protected] IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 20 www.vishay.com 1 110RKI...PbF/111RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM TEST CONDITIONS 180° conduction, half sine wave I2√t 90 °C t = 10 ms 2080 t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing A 172 t = 10 ms I2 t UNITS 110 DC at 83 °C case temperature t = 8.3 ms Maximum I2t for fusing VALUES No voltage reapplied 100 % VRRM reapplied No voltage reapplied 2180 Sinusoidal half wave, initial TJ = TJ maximum 1830 21.7 19.8 15.3 100 % VRRM reapplied 217 Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.82 VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.02 Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 2.16 High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 1.70 Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.57 VTM Maximum holding current IH Typical latching current IL TJ = 25 °C, anode supply 6 V resistive load kA2s 14.0 t = 0.1 to 10 ms, no voltage reapplied High level value of threshold voltage Maximum on-state voltage A 1750 200 400 kA2√s V mΩ V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM Typical delay time td Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C Typical turn-off time tq ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/µs VR = 50 V, dV/dt = 20 V/µs, gate 0 V 25 Ω VALUES UNITS 300 A/µs 1 µs 110 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum rated VDRM/VRRM applied 20 mA www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94379 Revision: 11-Aug-08 110RKI...PbF/111RKI...PbF Series Phase Control Thyristors (Stud Version), 110 A Vishay High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. MAX. TJ = TJ maximum, tp ≤ 5 ms 12 TJ = TJ maximum, f = 50 Hz, d% = 50 3.0 IGT Maximum required gate trigger/current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 25 °C TJ = - 40 °C VGT TJ = 25 °C 180 - 80 120 40 - 2.5 - 1.6 2 1 - TJ = 140 °C DC gate current not to trigger IGD DC gate voltage not to trigger VGD V 10 TJ = 140 °C DC gate voltage required to trigger A 20 TJ = - 40 °C DC gate current required to trigger W 3.0 TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS mA V 6.0 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range TEST CONDITIONS TJ - 40 to 140 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.27 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.1 Non-lubricated threads 15.5 (137) Lubricated threads 14 (120) Mounting torque, ± 10 % Approximate weight 130 Case style See dimensions - link at the end of datasheet °C K/W N·m (lbf · in) g TO-209AC (TO-94) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.043 0.031 120° 0.052 0.053 90° 0.066 0.071 60° 0.096 0.101 30° 0.167 0.169 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94379 Revision: 11-Aug-08 For technical questions, contact: [email protected] www.vishay.com 3 110RKI...PbF/111RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A 140 111RKI Series RthJC (DC) = 0.27 K/W 130 120 Ø Conduction angle 110 100 90° 90 30° 60° 120 Ø Conduction period 110 100 30° 90 60° 90° 80 120° 120° 180° DC 180° 70 80 0 20 40 60 80 100 0 120 80 100 120 140 160 180 Fig. 2 - Current Ratings Characteristics Conduction angle 20 111RKI Series TJ = 140 °C Maximum Average On-State Power Loss (W) 40 K/ W W 100 R -Δ Ø K/ W 60 1 K/ W 8 K/ RMS limit 120 6 0. 3 0. 180° 120° 90° 60° 30° 0. = 140 SA 140 80 60 Fig. 1 - Current Ratings Characteristics 160 100 40 Average On-State Current (A) 160 120 20 Average On-State Current (A) R th Maximum Average On-State Power Loss (W) 111RKI Series RthJC (DC) = 0.27 K/W 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 140 1.5 80 K/W 2 K/ W 60 40 4 K/W 20 5 K/W 0 0 0 40 20 60 80 100 0 120 40 20 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Average On-State Current (A) Fig. 3 - On-State Power Loss Characteristics 220 220 111RKI Series TJ = 140 °C 20 0 Maximum Average On-State Power Loss (W) Maximum Average On-State Power Loss (W) Conduction period 40 0.6 K 140 60 /W K/W 1K /W 1.5 K/W 2 K/W 40 4 K/W 20 5 K/W R -Δ Ø 60 160 /W 80 K 100 3 120 0. RMS limit 180 = 140 A 160 200 S 180 R th DC 180° 120° 90° 60° 30° 200 0.8 120 100 80 0 0 20 40 60 80 100 120 140 160 180 0 20 Average On-State Current (A) 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94379 Revision: 11-Aug-08 110RKI...PbF/111RKI...PbF Series Phase Control Thyristors (Stud Version), 110 A 2000 1600 Peak Half Sine Wave On-State Current (A) Peak Half Sine Wave On-State Current (A) 2500 At any rated load condition and with rated VRRM applied following surge Initial TJ = 140 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1800 1400 1200 1000 Vishay High Power Products Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. 2000 Initial TJ = 140 °C No voltage reapplied Rated VRRM reapplied 1500 1000 111RKI Series 111RKI Series 800 1 10 500 100 0.01 0.1 1.0 10 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-State Current (A) Number of Equal Amplitude Half Cycle Current Pulse (N) 10 000 TJ = 25 °C 1000 TJ = 140 °C 100 10 111RKI Series 1 0 1 2 3 4 5 Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (K/W) 1.0 Steady state value RthJC = 0.27 K/W (DC operation) 0.1 0.01 111RKI Series 0.001 0.0001 0.001 0.01 0.1 1.0 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic Document Number: 94379 Revision: 11-Aug-08 For technical questions, contact: [email protected] www.vishay.com 5 110RKI...PbF/111RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 30 Ω tr ≤ 0.5 µs, tp ≥ 6 µs b) Recommended load line for ≤ 30 % rated dI/dt: 15 V, 40 Ω tr ≤ 1 µs, tp ≥ 6 µs (a) (b) VGD IGD TJ = 40 °C TJ = 25 °C 1.0 0.1 0.001 (1) PGM = 12 W, tp = 5 ms (2) PGM = 30 W, tp = 2 ms (3) PGM = 60 W, tp = 1 ms (4) PGM = 200 W, tp = 300 µs TJ = 140 °C Instantaneous Gate Voltage (V) 100 (1) 0.1 (3) (4) Frequency limited by PG(AV) Device: 111RKI Series 0.01 (2) 10 1.0 100 1000 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code 11 0 RKI 120 PbF 1 2 3 4 5 1 - IT(AV) rated average output current (rounded/10) 2 - 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) 3 - Thyristor 4 - Voltage code x 100 = VRRM (see Voltage Ratings table) 5 - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 http://www.vishay.com/doc?95003 For technical questions, contact: [email protected] Document Number: 94379 Revision: 11-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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