VISHAY 111RKI120PBF

110RKI...PbF/111RKI...PbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 110 A
FEATURES
• High current and high surge ratings
RoHS
• Hermetic ceramic housing
COMPLIANT
• RoHS compliant
• Lead (Pb)-free
• Designed and qualified for industrial level
TO-209AC (TO-94)
TYPICAL APPLICATIONS
• DC motor controls
PRODUCT SUMMARY
IT(AV)
• Controlled DC power supplies
110 A
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
VALUES
UNITS
110
A
90
°C
172
IT(RMS)
ITSM
I2 t
50 Hz
2080
60 Hz
2180
50 Hz
21.7
60 Hz
19.8
VDRM/VRRM
Typical
tq
TJ
A
kA2s
400 to 1200
V
110
µs
- 40 to 140
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
40
400
500
80
800
900
120
1200
1300
110RKI
111RKI
Document Number: 94379
Revision: 11-Aug-08
For technical questions, contact: [email protected]
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
20
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110RKI...PbF/111RKI...PbF Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 110 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
TEST CONDITIONS
180° conduction, half sine wave
I2√t
90
°C
t = 10 ms
2080
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2√t for fusing
A
172
t = 10 ms
I2 t
UNITS
110
DC at 83 °C case temperature
t = 8.3 ms
Maximum I2t for fusing
VALUES
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
2180
Sinusoidal half wave,
initial TJ = TJ maximum
1830
21.7
19.8
15.3
100 % VRRM
reapplied
217
Low level value of threshold voltage
VT(TO)1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.82
VT(TO)2
(I > π x IT(AV)), TJ = TJ maximum
1.02
Low level value of on-state slope resistance
rt1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
2.16
High level value of on-state slope resistance
rt2
(I > π x IT(AV)), TJ = TJ maximum
1.70
Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.57
VTM
Maximum holding current
IH
Typical latching current
IL
TJ = 25 °C, anode supply 6 V resistive load
kA2s
14.0
t = 0.1 to 10 ms, no voltage reapplied
High level value of threshold voltage
Maximum on-state voltage
A
1750
200
400
kA2√s
V
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 Ω, tr ≤ 1 µs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/µs
Vd = 0.67 % VDRM, TJ = 25 °C
Typical turn-off time
tq
ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/µs
VR = 50 V, dV/dt = 20 V/µs, gate 0 V 25 Ω
VALUES
UNITS
300
A/µs
1
µs
110
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/µs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum rated VDRM/VRRM applied
20
mA
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For technical questions, contact: [email protected]
Document Number: 94379
Revision: 11-Aug-08
110RKI...PbF/111RKI...PbF Series
Phase Control Thyristors
(Stud Version), 110 A
Vishay High Power Products
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
VALUES
TEST CONDITIONS
TYP. MAX.
TJ = TJ maximum, tp ≤ 5 ms
12
TJ = TJ maximum, f = 50 Hz, d% = 50
3.0
IGT
Maximum required gate
trigger/current/voltage are the
lowest value which will
trigger all units 12 V
anode to cathode applied
TJ = 25 °C
TJ = - 40 °C
VGT
TJ = 25 °C
180
-
80
120
40
-
2.5
-
1.6
2
1
-
TJ = 140 °C
DC gate current not to trigger
IGD
DC gate voltage not to trigger
VGD
V
10
TJ = 140 °C
DC gate voltage required to trigger
A
20
TJ = - 40 °C
DC gate current required to trigger
W
3.0
TJ = TJ maximum, tp ≤ 5 ms
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM
anode to cathode applied
UNITS
mA
V
6.0
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction temperature range
TEST CONDITIONS
TJ
- 40 to 140
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance, junction to case
RthJC
DC operation
0.27
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.1
Non-lubricated threads
15.5
(137)
Lubricated threads
14
(120)
Mounting torque, ± 10 %
Approximate weight
130
Case style
See dimensions - link at the end of datasheet
°C
K/W
N·m
(lbf · in)
g
TO-209AC (TO-94)
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
180°
0.043
0.031
120°
0.052
0.053
90°
0.066
0.071
60°
0.096
0.101
30°
0.167
0.169
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94379
Revision: 11-Aug-08
For technical questions, contact: [email protected]hay.com
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110RKI...PbF/111RKI...PbF Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 110 A
140
111RKI Series
RthJC (DC) = 0.27 K/W
130
120
Ø
Conduction angle
110
100
90°
90
30°
60°
120
Ø
Conduction period
110
100
30°
90
60°
90°
80
120°
120°
180°
DC
180°
70
80
0
20
40
60
80
100
0
120
80 100
120 140 160 180
Fig. 2 - Current Ratings Characteristics
Conduction angle
20
111RKI Series
TJ = 140 °C
Maximum Average
On-State Power Loss (W)
40
K/
W
W
100
R
-Δ
Ø
K/
W
60
1
K/
W
8
K/
RMS limit
120
6
0.
3
0.
180°
120°
90°
60°
30°
0.
=
140
SA
140
80
60
Fig. 1 - Current Ratings Characteristics
160
100
40
Average On-State Current (A)
160
120
20
Average On-State Current (A)
R th
Maximum Average
On-State Power Loss (W)
111RKI Series
RthJC (DC) = 0.27 K/W
130
Maximum Allowable
Case Temperature (°C)
Maximum Allowable
Case Temperature (°C)
140
1.5
80
K/W
2 K/
W
60
40
4 K/W
20
5 K/W
0
0
0
40
20
60
80
100
0
120
40
20
60
80
100
120
140
Maximum Allowable
Ambient Temperature (°C)
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
220
220
111RKI Series
TJ = 140 °C
20
0
Maximum Average
On-State Power Loss (W)
Maximum Average
On-State Power Loss (W)
Conduction period
40
0.6
K
140
60
/W
K/W
1K
/W
1.5
K/W
2 K/W
40
4 K/W
20
5 K/W
R
-Δ
Ø
60
160
/W
80
K
100
3
120
0.
RMS limit
180
=
140
A
160
200
S
180
R th
DC
180°
120°
90°
60°
30°
200
0.8
120
100
80
0
0
20
40
60
80
100 120 140 160 180
0
20
Average On-State Current (A)
40
60
80
100
120
140
Maximum Allowable
Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
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For technical questions, contact: [email protected]
Document Number: 94379
Revision: 11-Aug-08
110RKI...PbF/111RKI...PbF Series
Phase Control Thyristors
(Stud Version), 110 A
2000
1600
Peak Half Sine Wave
On-State Current (A)
Peak Half Sine Wave
On-State Current (A)
2500
At any rated load condition and with
rated VRRM applied following surge
Initial TJ = 140 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
1800
1400
1200
1000
Vishay High Power Products
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
2000
Initial TJ = 140 °C
No voltage reapplied
Rated VRRM reapplied
1500
1000
111RKI Series
111RKI Series
800
1
10
500
100
0.01
0.1
1.0
10
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-State Current (A)
Number of Equal Amplitude Half
Cycle Current Pulse (N)
10 000
TJ = 25 °C
1000
TJ = 140 °C
100
10
111RKI Series
1
0
1
2
3
4
5
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
ZthJC - Transient Thermal
Impedance (K/W)
1.0
Steady state value
RthJC = 0.27 K/W
(DC operation)
0.1
0.01
111RKI Series
0.001
0.0001
0.001
0.01
0.1
1.0
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Document Number: 94379
Revision: 11-Aug-08
For technical questions, contact: [email protected]
www.vishay.com
5
110RKI...PbF/111RKI...PbF Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 110 A
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30 Ω
tr ≤ 0.5 µs, tp ≥ 6 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 15 V, 40 Ω
tr ≤ 1 µs, tp ≥ 6 µs
(a)
(b)
VGD
IGD
TJ = 40 °C
TJ = 25 °C
1.0
0.1
0.001
(1) PGM = 12 W, tp = 5 ms
(2) PGM = 30 W, tp = 2 ms
(3) PGM = 60 W, tp = 1 ms
(4) PGM = 200 W, tp = 300 µs
TJ = 140 °C
Instantaneous Gate Voltage (V)
100
(1)
0.1
(3)
(4)
Frequency limited by PG(AV)
Device: 111RKI Series
0.01
(2)
10
1.0
100
1000
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
11
0
RKI
120
PbF
1
2
3
4
5
1
-
IT(AV) rated average output current (rounded/10)
2
-
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
3
-
Thyristor
4
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
5
-
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
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http://www.vishay.com/doc?95003
For technical questions, contact: [email protected]
Document Number: 94379
Revision: 11-Aug-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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