*P\o<bju±*.t
(Jna.
20 STERN AVE
SPRINQRELD, NEW JERSEY 07081
U.SA
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
50RIA SERIES
Stud Version
MEDIUM POWER THYRISTORS
Features
High current rating
Excellent dynamic characteristics
50 A
dv/dt = 1OOOWus option
Superior surge capabilities
Standard package
Metric threads version available
Types up to 1600V V DRM /V RRM
Typical Applications
Phase control applications in converters
Lighting circuits
Battery charges
Regulated power supplies and temperature and
speed control circuit
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
50RIA
Parameters
r(Av|
@T C
50
50
A
94
90
°C
s. I
80
80
A
1430
1200
A
@60Hz
1490
1257
A
@50Hz
10,18
7.21
KA2S
@60Hz
9.30
6.58
KA2s
100(0 1200
1400to 1600
V
IT3M
w
/w
V ORM' V RRM
tq
140 to 160
@50Hz
'TIRMSI
I2t
Units
10 to 120
typical
L
E E TRI A SPE
110
MS
- 4 0 to 125
°C
Case Style
TO-208AC (TO-65)
I ATIO S
Voltage Ratings
Type number
50RIA
Voltage
Code
VRSM , maximum non-
10
vrWVRRM> max- repetitive
peak and off-stale voltage (1)
V
100
20
200
40
400
repetitive peak voltage (2)
V
150
300
500
60
600
700
ao
800
900
100
1000
1100
1300
120
1200
140
1400
1500
160
1600
1700
'ORM^RRM max '
@ Tj = Tj max
mA
15
(1) Unils may be broken over non-repelitively in the off-slate direction without damage, If dl/dt does not exceed
(2) For voltage pulses with t 5 5ms
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information turnished hy NJ Semi-Cnnductors is helieved to he both accurate and reliable at the time uf going to press. However N.I
Semi-C onduclors assumes no responsibility tor any errors or omissions discovered in its use. NJ Semi-Cuiuluctors encourages
customers to ventv thai datasheets are current before placing orders.
On-state Conduction
50RIA
Parameter
IT
W)
I2t
VT(TO|1
Units
50
50
A
@ Case temperature
94
90
•c
Conditions
160' sinusoidal conduction
80
80
A
Max. peak, one-cyde
1430
1200
A
non-repetitive surge current
1490
1257
t = 8.3ms
reappiied
1200
1010
t = 10ms
100% VRRM
RMS on-state current
1255
1057
10.18
7.21
9.30
7.20
t ~ 10ms
No voltage
1 - 8.3ms
reappiied
Sinusoidal half wave,
t = 10ms
No voltage
Initial T, = T, max.
6.58
t = 8 3ms
reappiied
5.10
t = 10ms
100% VRRM
656
4.65
t = 8.3ms
reappiied
Maximum Wt for fusing
101.8
72.1
KA^s
Low level value of threshold
0.94
1.02
V
1.08
1 17
4.08
4.78
3,34
3.97
Maximum ft for fusing
I2!/!
140to160
Max. average on-state current
Max.
ITSM
1010120
KA2S
t = 0.1 to 10ms, no voltage reappiied, Tj = Tj max.
(1 6.7% x n x IT(AV) < I < n x IT(AV)), Tj - T, max.
voltage
VT(TOJ2
High level value of threshold
( I I xl T ( A V ) <l<20x I rxl T ( A V ) ). Tj-Tjmax.
voltage
rn
Low level value of on-state
mil
(16.7% x * x IT(A¥) < I < K x L(AV)), Tj = Tj max.
slope resistance
r,2
High level value of on-state
<K X IT(AV1 < l< 20 X n x IT(W)), Tj = Tj max.
slope resistance
1.60
Vru
Max. on-state voltage
IH
Maximum holding current
200
IL
Latching current
400
1.78
V
mA
lpk= 157 A, Tj = 25'C
Tj = 25'C. Anode supply 22V, resistive toad,
Initial IT » 2A
Anode supply 6V, resistive load
Switching
Parameter
di/dt
50RIA
Units
current
Conditions
TC = 125'C,VDM = rated VDRM
Max. rate of rise of turned-on
VDnM £ 600V
200
VORU i 1600V
100
ITM = (2x rated di/dt) A
Tc = 25T VDM = rated VDRU LU = 10A dc resistive circuit
td
Typical delay time
0.9
lq
Typical turn-off time
110
A/us
us
Gate pulse = 20V, 15n, t = 6us, t f = 0.1us max
Gate pulse - 10V, 15n source, tn = 20ps
Tc = 125'C, ITU = 50A. reappiied dv/dt = 20V/us
dir/dt = -10A/MS, VR=50V
Blocking
Parameter
dv/dt
Max. critical rate of rise of
off-state voltage
50RIA
200
soon
Units
V/MS
Conditions
Tj = Tj max. linear to 100% rated VDRM
Tj = Tj max. linear to 67% rated VORM
(•) Available with dv/dt = 1000V/MS. to complete code add S90 i.e. 50RIA160S90.
Triggering
Parameter
PGM
50RIA
Maximum peak gate power
PG{AV. Maximum average gate power
2.5
IGM
Max. peak positive gate current
2.5
+VGM
Maximum peak positive
Tj = Tj max, t s 5ms
w
A
V
Maximum peak negative
10
gate voltage
IGT
<s>
DC gate current required
250
to trigger
mA
50
VGT
Conditions
20
gate voltage
-VGM
Units
10
DC gate voltage required
Tj = - 40'C
?,,r
J ~
Tj = 1 25"C
3.5
to (rigger
rn>
V
mA
IGD
DC gate current not to trigger
5.0
VGO
DC gate voltage not to trigger
0.2
L
Max. required gate trigger
current/voltage are the
lowest value which will trigger
J ""
Tj = 25'C
applied
T = T max
VJ Crated voltage
lr'9ger
Wax -
9a(e current/ voltage not to
's the max. value which
V
Tj = Tj max
VORM anode-to-calhode applied
Conditions
Thermal and Mechanical Specification
50RIA
Units
Tj
Parameter
Max. operating temperature range
-40to125
T,,,,
sig
Max. storaga temperature range
- 4 0 to 125
•c
•c
0.35
K/W
DC operation
0,25
K/W
Mounting surface, smooth, flat and greased
Non-lubricated threads
RIhJC
lh ,„
Max. thermal resistance,'
junction to case
R(hcs Max. thermal resistance,
case lo heatstnk
T
Min.
2.8 (25)
Nm
Max.
3.4(30)
(Ibf-in)
28(10)
g(oz)
Mounting torque
wt
Approximate weight
Case style
TO-208AC (TO-65)
See Outline Table
AR(hJC Conduction
(The following table shows the increment of thermal resistance R(UC when devices operate at different conduction angles than DC)
Rectangular conduction Units
Conduction angle
Sinusoidal conduction
180'
0.078
0.057
120°
0.094
0.098
0.130
0.183
0.296
90'
0.120
60*
0.176
30'
0.294
K/W
Ordering Information Table
De i e ode
50 I RIA I
0 IS 0 I M
Current code
Essential part number
Voltage code: Coda x 10 = V RRM (See Voltage Rating Table)
Critical dv/dt: None = 500V/us (Standard value)
S90
= 1000V/us (Special selection)
None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A
M
= Stud base TO-208AC (TO-65) M6 X 1
Conditions
Tj = Tj max.
Outline Table
~
10.59 D I A )
Ft
La
1/<T -29 U N F - 2 A
F o r H e r r i c Q e v i r e M6xl
Case Style TO208AC (TO-65)
AH dimensions in millimeters (inches)