SANYO 2SK3746_12

2SK3746
Ordering number : EN8283A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK3746
High-Voltage, High-Speed Switching
Applications
Features
•
•
•
Low ON-resistance, low input capacitance, ultrahigh-speed switching
High reliability (Adoption of HVP process)
Avalanche resistance guarantee
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
ID
IDP
Allowable Power Dissipation
PD
PW≤10μs, duty cycle≤1%
Tc=25°C
Unit
1500
V
±20
V
2
A
4
A
2.5
W
110
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
41
mJ
2
A
Avalanche Current *2
*1 VDD=50V, L=20mH, IAV=2A (Fig.1)
*2 L≤20mH, single pulse
Package Dimensions
Product & Package Information
unit : mm (typ)
7539-002
• Package
: TO-3P-3L
• JEITA, JEDEC : SC-65, TO-247, SOT-199
• Minimum Packing Quantity : 30 pcs./magazine
2SK3746-1E
4.8
15.6
5.0
1.5
Marking
7.0
3.2
Electrical Connection
16.76
10.0
13.6
3.5
18.4
19.9
2
K3746
LOT No.
1.0
20.0
1
2.0
3.0
0.6
3
2
3
1.4
1
5.45
1 : Gate
2 : Drain
3 : Source
5.45
SANYO : TO-3P-3L
http://semicon.sanyo.com/en/network
52312 TKIM TC-00002762/62005QB MSIM TB-00001345 No.8283-1/7
2SK3746
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Ratings
Conditions
min
typ
1500
ID=1mA, VGS=0V
VDS=1200V, VGS=0V
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=16V, VDS=0V
VDS=10V, ID=1mA
2.5
Forward Transfer Admittance
| yfs |
VDS=20V, ID=1A
0.7
Static Drain-to-Source On-State Resistance
RDS(on)
ID=1A, VGS=10V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
r507
RG
μA
±10
μA
1.4
See Fig.2
IS=2A, VGS=0V
V
S
10
VDS=200V, VGS=10V, ID=2A
13
Ω
380
pF
70
pF
40
pF
12
ns
37
ns
152
ns
59
ns
37.5
nC
2.7
nC
20
nC
0.88
1.2
V
Fig.2 Switching Time Test Circuit
L
10V
0V
VIN
VDD=200V
ID=1A
RL=200Ω
2SK3746
VDD
507
100
3.5
VIN
10V
0V
Unit
V
VDS=30V, f=1MHz
Fig.1 Avalanche Resistance Test Circuit
max
VOUT
D
PW=10μs
D.C.≤0.5%
G
2SK3746
P.G
RGS=50Ω
S
Ordering Information
Device
2SK3746-1E
Package
Shipping
memo
TO-3P-3L
30pcs./magazine
Pb Free
No.8283-2/7
2SK3746
ID -- VDS
4.0
8V
2.5
6V
2.0
1.5
5V
1.0
VDS=20V
pulse
Tc= --25°C
2.5
10V
3.0
Drain Current, ID -- A
Drain Current, ID -- A
3.5
ID -- VGS
3.0
Tc=25°C
pulse
2.0
25°C
1.5
75°C
1.0
0.5
0.5
VGS=4V
15
20
25
30
35
40
45
Drain-to-Source Voltage, VDS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
20
Tc=75°C
25°C
--25°C
5
0
2
4
6
8
10
12
14
16
Gate-to-Source Voltage, VGS -- V
| yfs | -- ID
°C
25
1.0
5°C
--2
=
°C
Tc
75
3
2
0.1
5
7
2
0.1
3
5
7
Drain Current, ID -- A
--25
0
75
100
125
150
IT09034
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
0.4
0.6
0.8
1.0
1.2
IT09036
Ciss, Coss, Crss -- VDS
f=1MHz
2
Ciss, Coss, Crss -- pF
5
tr
2
1000
7
5
Ciss
3
2
Co
ss
100
7
5
Crss
3
2
td(on)
10
0.1
50
3
tf
3
25
IS -- VSD
5
100
7
20
IT09032
5
Diode Forward Voltage, VSD -- V
td(off)
2
18
10
IT09035
VDD=200V
VGS=10V
3
16
15
0.01
0.2
3
SW Time -- ID
5
Switching Time, SW Time -- ns
2
1.0
14
20
3
2
3
12
25
10
7
5
2
10
Case Temperature, Tc -- °C
3
5
8
ID=1A
VGS=10V
IT09033
VDS=20V
7
6
RDS(on) -- Tc
0
--50
20
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
5
18
4
30
25
10
2
Gate-to-Source Voltage, VGS -- V
ID=1A
15
0
IT09031
RDS(on) -- VGS
30
0
0
50
--25°C
10
5°C
25°C
5
Tc=
7
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
0
2
3
5
7
1.0
Drain Current, ID -- A
2
3
IT09037
10
0
5
10
15
20
25
30
35
40
Drain-to-Source Voltage, VDS -- V
45
50
IT09038
No.8283-3/7
2SK3746
VGS -- Qg
10
VDS=200V
ID=2A
3
ID=2A
2
7
4
3
2
1.0
7
5
10 10m
0m s
s
s
n
io
at
er
5
0μ
s
op
6
10
1m
C
Drain Current, ID -- A
8
3
2
Operation in this area
is limited by RDS(on).
0.1
7
5
3
Tc=25°C
Single pulse
2
1
0
10
0
20
30
Total Gate Charge, Qg -- nC
0.01
1.0
40
2 3
5 7 10
Allowable Power Dissipation, PD -- W
2.0
1.5
1.0
0.5
5 7 100
2 3
5 71000 2 3
IT16891
PD -- Tc
120
2.5
2 3
Drain-to-Source Voltage, VDS -- V
IT09039
PD -- Ta
3.0
Allowable Power Dissipation, PD -- W
IDP=4A(PW≤10μs)
D
Gate-to-Source Voltage, VGS -- V
9
ASO
7
5
110
100
80
60
40
20
0
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT09041
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT09042
No.8283-4/7
2SK3746
Magazine Specification
2SK3746-1E
No.8283-5/7
2SK3746
Outline Drawing
2SK3746-1E
Mass (g) Unit
1.8
mm
* For reference
No.8283-6/7
2SK3746
Note on usage : Since the 2SK3746 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of May, 2012. Specifications and information herein are subject
to change without notice.
PS No.8283-7/7