APT10M11B2VR
0.011Ω
100V 100A
POWER MOS V ®
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• New T-MAX™ Package
D
G
(Clip-mounted TO-247 Package)
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT10M1B2VR
UNIT
100
Volts
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
1
6
100
6
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
520
Watts
Linear Derating Factor
4.16
W/°C
VGSM
PD
TJ,TSTG
400
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
6
100
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
100
Volts
100
Amps
On State Drain Current
2
6
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
(VGS = 10V, 0.5 ID[Cont.])
MAX
0.011
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-5617 Rev C
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT10M11B2VR
Characteristic
Test Conditions
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
8600
10300
Coss
Output Capacitance
VDS = 25V
3200
4480
Reverse Transfer Capacitance
f = 1 MHz
1180
1770
Crss
Qg
Total Gate Charge
Qgs
3
VGS = 10V
300
450
VDD = 0.5 VDSS
95
145
ID = 0.5 ID[Cont.] @ 25°C
110
165
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
VGS = 15V
16
32
VDD = 0.5 VDSS
33
66
ID = ID[Cont.] @ 25°C
46
70
RG = 0.6Ω
8
16
TYP
MAX
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Symbol
IS
ISM
VSD
Continuous Source Current
6
MIN
100
(Body Diode)
Pulsed Source Current
1
6
Diode Forward Voltage
2
(VGS = 0V, IS = -ID[Cont.])
400
(Body Diode)
1.5
UNIT
Amps
Volts
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs)
250
ns
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs)
2.5
µC
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.24
40
1 Repetitive Rating: Pulse width limited by maximum T
j
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
D=0.5
0.1
0.2
0.1
0.05
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5617 Rev C
0.3
0.01
0.02
0.005
0.01
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
°C/W
4 Starting T = +25°C, L = 500µH, R = 25Ω, Peak I = 100A
j
G
L
5 These dimensions are equal to the TO-247AD without mounting hole.
6 The maximum current is limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.05
UNIT
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT10M11B2VR
200
VGS=7V, 10V & 15V
VGS=10 & 15V
160
6V
120
5.5V
80
5V
4.5V
40
ID, DRAIN CURRENT (AMPERES)
160
6V
120
5.5V
80
5V
40
4.5V
4V
4V
0
0
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
TJ = +25°C
160
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
120
80
TJ = +125°C
40
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
200
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
V
1.05
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
VGS=10V
1.00
0.95
0.90
VGS=20V
0.85
0.80
0
50
100
150
200
250
300
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50
1.2
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
1.75
1.50
1.25
1.00
0.75
0.50
-50
1.10
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
2.00
7V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5617 Rev C
ID, DRAIN CURRENT (AMPERES)
200
APT10M11B2VR
100µS
OPERATION HERE
LIMITED BY RDS (ON)
30,000
100
1mS
50
10mS
10
100mS
5
DC
TC =+25°C
TJ =+150°C
SINGLE PULSE
IDR, REVERSE DRAIN CURRENT (AMPERES)
D
VDS=20V
16
VDS=50V
12
VDS=80V
8
4
0
5,000
Crss
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I = 0.5 I [Cont.]
D
Coss
500
1
5
10
50
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
Ciss
10,000
1,000
1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Coss
Ciss
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
400
0
100
200
300
400
500
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
400
TJ =+150°C
TJ =+25°C
100
50
10
5
1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
T-MAX™ Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
5
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
Gate
Drain
1.01 (.040)
1.40 (.055)
Source
050-5617 Rev C
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058