ULBM5SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5SL is Designed for PACKAGE STYLE .280 4L STUD FEATURES: A 45° • • • Omnigold™ Metalization System B C D MAXIMUM RATINGS J E IC 1.7 A VCBO 36 V VCER 16 V H K 4.0 V VEBO PDISS G 36 V VCES O TJ -65 C to +200 C TSTG -65 OC to +150 OC θ JC 12 OC/W CHARACTERISTICS SYMBOL MAXIMUM MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 .137 / 3.48 .572 / 14.53 .130 / 3.30 G .245 / 6.22 H O #8-32 UNC DIM F 15 W @ TC = 25 C O I F .255 / 6.48 .640 / 16.26 I J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10681 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 16 V BVCES IC = 10 mA 36 V BVEBO IE = 2.0 mA 4.0 V ICER VCE = 10 V ICBO VCB = 15 V hFE VCE = 5.0 V Cob VCB = 7.5 V PG ηC VCC = 7.5 V RBE = 50 Ω IC = 1.0 A 10 f = 1.0 MHz POUT = 5.0 W f = 470 MHz 8.5 mA 1.0 mA 100 --- 22 pF dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 % REV. A 1/1