ULBM2T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2T is Designed for PACKAGE STYLE TO-39 FEATURES: B • • • Omnigold™ Metalization System C 45° ØA ØD E F MAXIMUM RATINGS IC 0.75 A VCB0 36 V VCEO 16 V VCES 36 V PDISS 5 W @ TC = 25 C O O .029 / 0.740 .045 / 1.140 C .028 / 0.720 .034 / 0.860 D .335 / 8.510 .370 / 9.370 E .305 / 7.750 .335 / 8.500 .240 / 6.100 TJ -65 C to +200 C TSTG -65 OC to +150 OC H θ JC 35 OC/W SYMBOL .200 / 5.080 B F CHARACTERISTICS inches / mm inches / mm A O MAXIMUM MINIMUM DIM 4.0 V VEBO H G .260 / 6.600 .500 / 12.700 G .016 / 0.407 .020 / 0.508 ORDER CODE: ASI10676 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 25 mA 16 V BVCES IC = 5 mA 36 V BVEBO IE = 1.0 mA 4.0 V ICBO VCE = 15 V hFE VCE = 5.0 V Cob VCB = 12 V PG ηC VCC = 12.5 V 1.0 IC = 100 mA 20 --- f = 1.0 MHz POUT = 2.0 W f = 470 MHz 10 6.0 pF dB 55 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mA % REV. A 1/1