ULBM25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM25 is Designed for PACKAGE STYLE .500 6L FLG FEATURES: A C • • • Omnigold™ Metalization System 2x ØN FULL R D B MAXIMUM RATINGS E .725/18,42 F G M K 4.8 A IC VCBO 36 V VCEO 16 V H 36 V VEBO 4.0 V PDISS 70 W @ TC = 25 OC O TJ -65 C to +200 C TSTG -65 OC to +150 OC θ JC 2.5 OC/W CHARACTERISTICS SYMBOL MINIMUM inches / mm inches / mm A .150 / 3.43 .160 / 4.06 MAXIMUM .045 / 1.14 C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 H .725 / 18.42 I O L DIM B VCES J I J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .285 / 7.24 M .120 / 3.05 N .135 / 3.43 ORDER CODE: ASI10683 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 16 V BVCES IC = 10 mA 36 V BVEBO IE = 5.0 mA 4.0 V ICES VCE = 12.5 V hFE VCE = 5.0 V COB VCB = 12.5 V PG ηC VCC = 12.5 V IC = 1.0 A 10 f = 1.0 MHz POUT = 25 W f = 470 MHz 6.5 mA --- --- 80 pF dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5 % REV. A 1/1