TPV5051 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TPV5051 is Designed for AB Push Pull, Common Emitter from 470 to 860 MHz Applications. PACKAGE STYLE BMA-2 FEATURES: • Gold Metalization DIM A B C D E G H J K N Q U • Diffused Ballast Resistor MAXIMUM RATINGS IC 9.0 A VCEO 30 V VCBO 45 V PDISS 97 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 1.8 °C/W CHARACTERISTICS 1 = BASE 2 = BASE 4 = COLLECTOR INCHES MIN 0.790 0.250 0.165 0.055 0.055 0.060 0.076 0.003 0.190 0.258 0.125 0.552 MAX 0.810 0.270 0.198 0.065 0.065 0.070 0.096 0.005 0.210 0.268 0.135 0.572 3 = COLLECTOR 5 = EMITTER TC = 25 °C NONETEST CONDITIONS SYMBOL MILLIMETER S MIN MAX 20.07 20.57 6.35 6.85 4.20 5.02 1.40 1.65 1.40 1.65 1.27 1.77 1.34 2.43 0.08 0.12 4.83 5.33 6.56 6.80 3.18 3.42 14.03 14.52 MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 60 mA 30 V BVCBO IC = 20 mA 45 V BVEBO IE = 6.0 mA 4.0 V BVCER IC = 10 mA 40 V ICEO VCE = 28 V hFE VCE = 20 V Cob VCB = 28 V PG ηC VCE = 28 V RBE = 50 Ω 10 IC = 800 mA Pout = 50 W --- 10 f = 1.0 MHz (EACH SIDE) Iq = 2X50 mA f = 860 MHz 40 6.5 45 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mA pF dB % REV. A 1/1