MSC81090 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .230 4L STUD DESCRIPTION: The ASI MSC81090 is Designed for General Purpose Class A Power Amplifier Applications from 0.4 - 1.2 GHz. FEATURES: • PG = 10 dB min. at 2.0 W/ 1.0 GHz • Hermetically sealed Package • Omnigold™ Metalization System • Emitter Ballasted MAXIMUM RATINGS IC 200 A VCC 35 V PDISS 6.25 W @ TC ≤ 75 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 20 °C/W CHARACTERISTICS COMMON EMITTER TC = 25 °C NONETEST CONDITIONS SYMBOL BVCBO IC = 1.0 mA BVCER IC = 5.0 mA BVEBO IE = 1.0 mA ICBO VCB = 28 V hFE VCE = 5.0 V Cob VCB = 18 V POUT ηC GP VCE = 18 V RBE = 10 Ω IC = 100 mA MINIMUM TYPICAL MAXIMUM 45 V 45 V 3.5 V 15 f = 1.0 MHz PIN = 0.2 W f = 1.0 GHz UNITS 2.0 50 10 2.2 55 10.4 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 120 --- 3.2 pF W % dB REV. A 1/1