STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC(Collector dissipation)=2W (Ceramic substate of 40×40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766 Ordering Information Type NO. Marking STB1188 B1 Package Code SOT-89 : hFE rank, monthly code Outline Dimensions unit : mm 4.0 0.50±0.1 2.5 -0.3 +0.5 -0.3 +0.2 1.00±0.3 KST-8002-001 -0.02 +0.04 0.42 0~0.1 1.5 -0.1 +0.2 0.42±0.05 1 0.15 Typ. 2 0.52±0.05 4.5 -0.1 +0.2 1.82±0.05 3 PIN Connections 1. Base 2. Collector 3. Emitter 1 STB1188 (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -32 V Emitter-Base voltage VEBO -5 V IC -2 A PC 0.5 Collector current Collector dissipation PC * W 2 Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C * : When mounted on 40×40×0.8mm ceramic substate (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -40 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -32 - - V Emitter-Base breakdown voltage BVEBO IE=-50µA, IC=0 -5 - - V Collector cut-off current ICBO VCB=-20V, IE=0 - - -1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 - - -1 µA 100 - 320 - IC=-2A, IB=-200mA - -0.5 -0.8 V VCB=-5V, IC=-500mA, f=30MHz - 150 - MHz VCB=-10V, IE=0, f=1MHz - 50 - pF DC current gain Collector-Emitter on voltage Transition frequency Collector output capacitance hFE * VCE(sat) fT Cob VCE=-3V, IC=-0.1A * : hFE rank / O : 100~200, Y : 160~320 KST-8002-001 2 STB1188 Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC - VBE Fig. 3 I C - VCE Fig. 4 VCE(sat) - IC Fig. 5 hFE - IC KST-8002-001 3