BC 807W / BC 808W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 PNP Power dissipation – Verlustleistung 225 mW Plastic case Kunststoffgehäuse SOT-323 Weight approx. – Gewicht ca. 2 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 1.3 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BC 807W BC 808W Collector-Emitter-voltage B open - VCE0 45 V 25 V Collector-Emitter-voltage B shorted - VCES 50 V 30 V Collector-Base-voltage E open - VCB0 50 V 30 V Emitter-Base-voltage C open - VEB0 5V Power dissipation – Verlustleistung Ptot 225 mW 1) Collector current – Kollektorstrom (DC) - IC 500 mA Peak Coll. current – Kollektor-Spitzenstrom - ICM 1000 mA Peak Base current – Basis-Spitzenstrom - IBM 200 mA Peak Emitter current – Emitter-Spitzenstrom IEM 1000 mA Junction temperature – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics, Tj = 25/C Kennwerte, Tj = 25/C Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 1 V, - IC = 100 mA - VCE = 1 V, - IC = 500 mA - VCE = 1 V, - IC = 100 mA 1 BC807W BC808W hFE 100 – 600 hFE 40 – – Group -16W hFE 100 160 250 Group -25W hFE 160 250 400 Group -40W hFE 250 400 600 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 4 01.11.2003 General Purpose Transistors BC 807W / BC 808W Characteristics, Tj = 25/C Kennwerte, Tj = 25/C Min. Typ. Max. – – 0.7 V - VBEsat – – 1.3 V - VBE – – 1.2 V Collector saturation voltage – Kollektor-Sättigungsspg. - IC = 500 mA, - IB = 50 mA - VCEsat Base saturation voltage – Basis-Sättigungsspannung - IC = 500 mA, - IB = 50 mA Base-Emitter voltage – Basis-Emitter-Spannung - VCE = 1 V, - IC = 500 mA Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 20 V - ICB0 – – 100 nA IE = 0, - VCB = 20 V, Tj = 150/C - ICB0 – – 5 :A - IEB0 – – 100 nA 80 MHz 100 MHz – – 10 pF – Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 4 V Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz fT Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking of available current gain groups per type Stempelung der lieferbaren Strom verstärkungsgruppen pro Typ BC 807-16W = 5A 620 K/W 1) BC 817W / BC 818W BC 807-25W = 5B BC 807-40W = 5C BC 808-25W = 5F BC 808-40W = 5G BC 807W = 5D BC 808-16W = 5E BC 808W = 5H 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 5