DYNEX DCR720E18

DCR720E
DCR720E
Phase Control Thyristor
Preliminary Information
DS5485-1.2 February 2002
FEATURES
■
Double Side Cooling
■
High Surge Capability
■
Low Inductance Internal Construction
KEY PARAMETERS
1800V
VDRM
724A
IT(AV)
9800A
ITSM
dV/dt*
1000V/µs
dI/dt
700A/µs
*Higher dV/dt selections available
APPLICATIONS
■
High Power Converters
■
DC Motor Control
■
High Voltage Power Supplies
VOLTAGE RATINGS
Part and Ordering
Number
DCR720E18
DCR720E16
DCR720E14
DCR720E12
Repetitive Peak
Voltages
VDRM and VDRM
V
1800
1600
1400
1200
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 30mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
Outline type code: E
(See Package Details for further information)
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR720E16
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DCR720E
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Parameter
Symbol
Test Conditions
Max.
Units
724
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1140
A
Continuous (direct) on-state current
-
1025
A
500
A
IT
Half wave resistive load
Single Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
790
A
Continuous (direct) on-state current
-
670
A
Max.
Units
570
A
IT
Half wave resistive load
Tcase = 80˚C unless stated otherwise.
Parameter
Symbol
Test Conditions
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
895
A
Continuous (direct) on-state current
-
790
A
390
A
IT
Half wave resistive load
Single Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
610
A
Continuous (direct) on-state current
-
505
A
IT
Half wave resistive load
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DCR720E
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
Test Conditions
Max.
Units
7.8
kA
0.3 x 106
A2s
9.8
kA
0.48 x 106
A2s
10ms half sine, Tcase = 125˚C
VR = 50% VRRM - 1/4 sine
Surge (non-repetitive) on-state current
10ms half sine, Tcase = 125˚C
I2t for fusing
VR = 0
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125˚C
-
30
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125˚C
-
1000
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 1100A
-
350
A/µs
-
700
A/µs
IRRM/IRRM
Repetitive 50Hz
Gate source 20V, 10Ω, Non-repetitive
tr ≤ 0.5µs, Tj = 125˚C
Threshold voltage
At Tvj = 125˚C
-
0.88
V
rT
On-state slope resistance
At Tvj = 125˚C
-
0.65
mΩ
tgd
Delay time
VD = 67% VDRM, gate source 10V, 5Ω
-
1.5
µs
300
400
µs
VT(TO)
tr = 0.5µs, Tj = 25˚C
tq
Turn-off time
IT = 500A, tp = 1ms, Tj =125˚C,
VR = 50V, dIRR/dt = 20A/µs,
VDR = 67% VDRM,
dVDR/dt = 20V/µs linear
IL
Latching current
Tj = 25˚C, VD = 5V
-
500
mA
IH
Holding current
Tj = 25˚C, VD = 5V
-
70
mA
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DCR720E
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Tvj
Test Conditions
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Min.
Max.
Units
Double side cooled
DC
-
0.041
˚CW
Single side cooled
Anode DC
-
0.074
˚CW
Cathode DC
-
0.092
˚CW
Double side
-
0.018
˚CW
(with mounting compound) Single side
-
0.036
˚CW
On-state (conducting)
-
135
˚C
Reverse (blocking)
-
125
˚C
Clamping force 8.0kN
Tstg
Storage temperature range
–55
125
˚C
Fm
Clamping force
7.2
8.8
kN
GATE TRIGGER CHARACTERISTICS AND RATINGS
Parameter
Symbol
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
3
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
150
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
0.25
V
VRGM
Peak reverse gate voltage
5
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
10
A
PGM
Peak gate power
See table, gate characteristics curve
100
W
PG(AV)
Mean gate power
5
W
-
-
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DCR720E
CURVES
1200
3000
Tj = 125˚C
1000
Mean power dissipation - (W)
Instantaneous on-state current, IT(AV) - (A)
2500
2000
1500
1000
500
0
0.5
800
600
400
dc
1/2 wave
3 phase
6 phase
200
1.0
1.5
2.0
2.5
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
3.0
0
0
200
400
600
800
Mean on-state current, IT(AV) - (A)
1000
Fig.3 Power dissipation
VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT
Where
A = 0.2366
B = 0.1182
C = 0.0005
D = –0.0019
these values are valid for Tj = 125˚C for IT 100A to 3000A
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DCR720E
100
Gate trigger voltage, VGT - (V)
IT = 500A
1000
Pulse width
µs
20
25
100
500
1ms
10ms
Frequency Hz
400
50
100
100
100
100
100
100
100
100
100
100
25
100
100
12.5
100
50
10
-
10
Up
lim
per
it 9
5%
1
QR
100
0.1
VGD
e
L ow
0.25xIRM
dIT/dt
IRM
1.0
10
Rate of decay of on-state current, dIT/dt - (A/µs)
0.1
0.001
100
0.01
0.1
Time - (s)
Effective thermal resistance
Junction to case ˚C/W
Double side
0.041
0.044
0.051
0.061
1.0
Anode side
0.074
0.077
0.084
0.093
Peak half sine on-state current - (kA)
Thermal Impedance - junction to case - (˚C/W)
1
10
IFGM
25
0.75
20
0.6
15
0.45
10
0.3
ITSM (VR = 0)
5
I2t value - (AVs x 106)
0.01
0.001
0.001
0.1
Fig.5 Gate characteristics
Double side cooled
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Region of certain
triggering
Gate trigger current, IGT - (A)
Anode side cooled
Conduction
it 5%
0.01
Fig.4 Stored charge
0.1
r lim
Tj = 125˚C
IT
tp
0W
10
W
50
IT = 1500A
Table gives pulse power PGM in Watts
W
20
W
10
5W
Recovered charge, QR - (µC)
Conditions:
Tj = 125˚C
VR = 50V
tp = 1ms
Tj = 25˚C
Tj = -40˚C
10000
0.15
ITSM (VR = 50% VRRM)
I2t (VR = 0)
I2t (VR = 50% VRRM)
0
10
Fig.6 Maximum (limit) transient thermal impedance junction to case (˚C/W)
0
1
2
3
4
5
6
7
8
9
Pulse lenght, half sine wave (ms)
10
Fig.7 Sub-cycle surge currents
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DCR720E
14
Surge current (VR = 0)
Surge current (VR = 50% VRRM)
Peak half sine wave on-state current - (kA)
12
10
8
6
4
2
0
0
10
20
30
40
number of cycles @ 50Hz
50
60
Fig.8 Multi-cycle surge currents
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DCR720E
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
30˚
15˚
2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep
(One in each electrode)
Cathode tab
Cathode
Ø42max
Ø25nom.
15
14
Ø1.5
Gate
Ø25nom.
Anode
Nominal weight: 82g
Clamping force: 8kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outine type code: E
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DCR720E
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
SALES OFFICES
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 Publication No. DS5485-1 Issue No. 1.2 February 2002
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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