DYNEX DCR1376SBA

DCR1376SBA
DCR1376SBA
Phase Control Thyristor
Advance Information
Replaces October 2000 version, DS4598 -5.0
DS4598-6.0 July 2001
FEATURES
KEY PARAMETERS
■ Double Side Cooling
VDRM
3600V
■ High Surge Capability
IT(AV)
1690A
ITSM
25000A
dVdt
1000V/µs
dI/dt
300A/µs
■ Low Turn-on Losses
APPLICATIONS
■ High Voltage Power Converters
■ High Voltage Power Supplies
■ Motor Control
VOLTAGE RATINGS
Type Number
DCR1376SBA36
DCR1376SBA34
DCR1376SBA32
DCR1376SBA30
DCR1376SBA28
Repetitive Peak
Voltages
VDRM VRRM
V
Conditions
3600
3400
3200
3000
2800
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 150mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
ORDERING INFORMATION
Outline type code: MU140.
See Package Details for further information.
Fig.1 Package outline
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1376SBA34
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DCR1376SBA
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Symbol
Parameter
Conditions
Max.
Units
1690
A
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
2655
A
Continuous (direct) on-state current
-
2440
A
1270
A
IT
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1990
A
Continuous (direct) on-state current
-
1740
A
Conditions
Max.
Units
1335
A
IT
Half wave resistive load
CURRENT RATINGS
Tcase = 80˚C unless stated otherwise.
Symbol
Parameter
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
2095
A
Continuous (direct) on-state current
-
1890
A
990
A
IT
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1550
A
Continuous (direct) on-state current
-
1340
A
IT
Half wave resistive load
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DCR1376SBA
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
Surge (non-repetitive) on-state current
Conditions
Max.
Units
10ms half sine; Tcase = 125oC
20
kA
VR = 50% VRRM - 1/4 sine
2.0 x 106
A2s
10ms half sine; Tcase = 125oC
25
kA
VR = 0
3.12 x 106
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Min.
Max.
Units
dc
-
0.013
o
Anode dc
-
0.021
o
Cathode dc
-
0.034
o
C/W
Double side
-
0.003
o
C/W
Single side
-
0.006
o
C/W
On-state (conducting)
-
135
o
Reverse (blocking)
-
125
o
Storage temperature range
-55
125
o
Clamping force
36.0
44.0
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 40kN
with mounting compound
C
Virtual junction temperature
C
C
kN
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DCR1376SBA
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Typ.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
150
mA
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% VDRM Tj = 125oC.
-
1000
V/µs
-
150
A/µs
Rate of rise of on-state current
From 67% VDRM to 2800A
Gate source 20V, 20Ω
tr ≤ 1.0µs. Tj = 125oC.
Repetitive 50Hz
dI/dt
Non-repetitive
-
300
A/µs
IRRM/IDRM
Threshold voltage
At Tvj = 125oC
-
1.1
V
rT
On-state slope resistance
At Tvj = 125oC
-
0.39
mΩ
tgd
Delay time
VD = 67% VDRM, Gate source 30V, 15Ω
Rise time 0.5µs, Tj = 25oC
-
1.5
ns
tq
Turn-off time
IT = 800A, tp = 1ms, Tj = 125˚C,
VR = 50V, dIRR/dt = 20A/µs,
VDR = 67% VDRM, dVDR/dt = 20V/µs linear
550
-
µs
IL
Latching current
Tj = 25oC, VD = 5V
-
400
mA
IH
Holding current
Tj = 25oC, VG-K = ∞
-
200
mA
Max.
Units
VT(TO)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
3.0
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
350
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
0.25
V
VRGM
Peak reverse gate voltage
5
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
10
A
PGM
Peak gate power
See table Fig.5
150
W
PG(AV)
Mean gate power
10
W
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DCR1376SBA
CURVES
5000
8000
Measured under pulse conditions
Tj = 125˚C
7000
6000
Mean power dissipation - (W)
Instantaneous on-state current, IT - (A)
4000
5000
4000
3000
3000
2000
2000
1000
d.c.
Half wave
3 phase
6 phase
1000
0
1.0
2.0
3.0
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
4.0
0
0
500
1000
1500
2000
Mean on-state current, IT(AV) - (A)
2500
Fig.3 Dissipation curves
VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT
Where
A = 1.459103
B = –0.07503561
C = 3.442677 x 10–4
D = 7.82981 x 10–3
these values are valid for Tj = 125˚C for IT 500A to 8000A
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DCR1376SBA
100
Conditions:
Tj = 125˚C
IT = 800A
VR = 100V
tp = 3ms - Trapezoidal
Table gives pulse power PGM in Watts
Pulse width
µs
Pulse frequency Hz
VGD
Lo
rl
we
imi
t 5%
dI/dt
100
0.1
IRR
1.0
10
Rate of decay of on-state current, dI/dt - (A/µs)
100
0.1
0.001
0.01
Tj = –40˚C
Tj = 25˚C
Gate trigger voltage VGT - (V)
5%
W
it 9
Region of certain
triggering
0.1
1
10
IFGM
Gate trigger current, IGT - (A)
Fig.4 Stored charge
0W
50
Total stored charge, QS - (µC)
10
lim
W
W
U
1
r
ppe
20
QS
10
5W
IT
400
150
125
100
25
-
10
1000
100
150
150
150
100
-
50
150
150
150
150
20
100
200
500
1ms
10ms
Tj = 125˚C
10000
Fig.5 Gate characteristics
0.1
40
Double side cooled
0.01
0.001
Conduction
0.0001
0.001
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.01
0.1
1
Time - (s)
30
20
2.0
I2t
1.5
10
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0130
0.0141
0.0170
0.0200
1.0
Anode side
0.0210
0.0221
0.0250
0.0280
0.5
0
10
100
1
10
ms
Fig.6 Transient thermal impedance - junction to case
1
2 3 45
10
I2t value - (A2s x 106)
Thermal impedance - (˚C/W)
Anode side cooled
Peak half sine wave on-state current - (kA)
I2t = Î2 x t
2
0
20 30 50
Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRSM at Tcase = 125˚C)
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DCR1376SBA
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole Ø3.6 x 2.1 approx (In both electrodes)
Cathode tab
Cathode
Ø102 max
Ø63 ± 1
33.5 ± 0.6
Ø1.5
Gate
Ø63 ± 1
Anode
Ø92 max
Nominal weight: 1100g
Clamping force: 40kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outine type code: MU140
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DCR1376SBA
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4598-6 Issue No. 6.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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