DYNEX DCR1596SW

DCR1596SW
DCR1596SW
Phase Control Thyristor
Replaces January 2000 version, DS4249-4.0
DS4249-5.0 July 2001
FEATURES
KEY PARAMETERS
■
Double Side Cooling
VDRM
■
High Surge Capability
IT(AV)
(max)
2856A
ITSM
(max)
46000A
APPLICATIONS
5200V
dV/dt *
1000V/µs
300A/µs
■
High Power Drives
dI/dt
■
High Voltage Power Supplies
* Higher dV/dt selections available
■
DC Motor Control
■
Welding
■
Battery Chargers
VOLTAGE RATINGS
Part and Ordering
Number
DCR1595SW52
DCR1595SW51
DCR1595SW50
DCR1595SW49
DCR1595SW48
DCR1595SW47
Repetitive Peak
Voltages
VDRM and VDRM
V
5200
5100
5000
4900
4800
4700
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 400mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Outline type code: W
Lower voltage grades available.
(See Package Details for further information)
ORDERING INFORMATION
Fig. 1 Package outline
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1596SW52
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DCR1596SW
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Parameter
Symbol
Test Conditions
Max.
Units
2856
A
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
4487
A
Continuous (direct) on-state current
-
4185
A
1889
A
IT
Single Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
2967
A
Continuous (direct) on-state current
-
2573
A
Max.
Units
2260
A
IT
Tcase = 80˚C unless stated otherwise.
Parameter
Symbol
Test Conditions
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
3550
A
Continuous (direct) on-state current
-
3230
A
1465
A
IT
Single Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
2300
A
Continuous (direct) on-state current
-
1950
A
IT
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DCR1596SW
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
Test Conditions
Units
37
kA
6.85 x 106
A2s
46
kA
10.6 x 106
A2s
10ms half sine, Tcase = 125˚C
VR = 50% VRRM - 1/4 sine
Surge (non-repetitive) on-state current
Max.
10ms half sine, Tcase = 125˚C
I2t for fusing
VR = 0
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Tvj
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Test Conditions
Min.
Max.
Units
Double side cooled
DC
-
0.008
˚CW
Single side cooled
Anode DC
-
0.016
˚CW
Cathode DC
-
0.016
˚CW
Double side
-
0.001
˚CW
(with mounting compound) Single side
-
0.002
˚CW
On-state (conducting)
-
135
˚C
Reverse (blocking)
-
125
˚C
Clamping force 70.0kN
Tstg
Storage temperature range
–55
125
˚C
Fm
Clamping force
63.0
77.0
kN
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DCR1596SW
SURGE RATINGS
Parameter
Symbol
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125˚C
-
400
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125˚C, gate open
-
1000
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV) Repetitive 50Hz
-
120
A/µs
Gate source 20V, 10Ω, Non-repetitive
-
300
A/µs
IRRM/IRRM
tr < 0.5µs, Tj = 125˚C
Threshold voltage
At Tvj = 125˚C
-
1.0
V
rT
On-state slope resistance
At Tvj = 125˚C
-
0.225
mΩ
tgd
Delay time
VD = 67% VDRM, gate source 30V, 15Ω
0.5
1.5
µs
500
1000
µs
VT(TO)
tr = 0.5µs, Tj = 25˚C
tq
Turn-off time
IT = 5000A, tp = 3.5ms, Tj =125˚C,
VR = 900V, dIRR/dt = 4A/µs,
VDR = 67% VDRM,
dVDR/dt = 20V/µs linear
IL
Latching current
Tj = 25˚C, VD = 5V
100
1000
mA
IH
Holding current
Tj = 25˚C, RG–K = ∞, ITM = 500A, IT = 5A
20
150
mA
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DCR1596SW
GATE TRIGGER CHARACTERISTICS AND RATINGS
Parameter
Symbol
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
4
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
400
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
0.25
V
VRGM
Peak reverse gate voltage
5
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
30
A
PGM
Peak gate power
See table fig. 8 and 9
150
W
PG(AV)
Mean gate power
10
W
-
-
CURVES
10000
4000
Tj = 125˚C
Tj = 125˚C
3500
Instantaneous on-state current, IT - (A)
Instantaneous on-state current, IT - (A)
9000
8000
7000
6000
5000
4000
3000
2000
2500
2000
1500
1000
500
1000
0
0.5
3000
1
1.5
2
2.5
3
0
0.6
3.5
Fig.2 Maximum (limit) on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.√IT
0.8
1
1.2
1.4
1.6
1.8
2
Instantaneous on-state voltage, VT - (V)
Instantaneous on-state voltage, VT - (V)
Fig.3 Maximum (limit) on-state characteristics
Where
A = –0.5011559
B = 0.2638417
C = 2.536711x10-4
D = –0.01249303
these values are valid for Tj = 125˚C for IT 500A to 10000A
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DCR1596SW
2000
6000
1800
1600
Mean power dissipation - (W)
Mean power dissipation - (W)
5000
4000
3000
Conduction angle
180˚
120˚
90˚
60˚
30˚
15˚
2000
1000
1400
1200
1000
800
Conduction angle
180˚
120˚
90˚
60˚
30˚
15˚
600
400
200
0
0
0
500
1000
1500
2000
2500
Mean on-state current, IT(AV) - (A)
0
3000
Fig.4 Sine wave power dissipation
200
400
600
800
1000
1200
Mean on-state current, IT(AV) - (A)
1400
Fig.5 Sine wave power dissipation
2000
6000
1800
1600
Mean power dissiaption - (W)
Mean power dissipation - (W)
5000
4000
3000
Conduction angle
D.C.
180˚
120˚
90˚
60˚
30˚
2000
1000
1400
1200
1000
800
Conduction angle
D.C.
180˚
120˚
90˚
60˚
30˚
600
400
200
0
0
0
500
1000
1500
2000 2500
3000
Mean on-state current, IT(AV) - (A)
Fig.6 Square wave power dissipation
3500
0
500
1000
1500
Mean on-state current , IT(AV) - (A)
2000
Fig.7 Square wave power dissipation
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DCR1596SW
10
Upper limit
Lower limit
Table gives pulse power PGM in Watts
9
Pulse Width
µs
100
200
500
1ms
10ms
Gate trigger voltage, VGT - (V)
8
7
Frequency Hz
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
6
Tj = -40˚C
5
Preferred gate drive area
Tj = 25˚C
4
3
Tj = 125˚C
2
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Gate trigger current, IGT - (A)
0.7
0.8
0.9
7
8
9
1
Fig.8 Gate characteristics
30
Upper limit
Lower limit
5W
10W
20W
50W
100W
150W
Gate trigger voltage, VGT - (V)
25
20
15
10
5
0
0
1
2
3
4
5
6
Gate trigger current, IGT - (A)
10
Fig.9 Gate characteristics
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DCR1596SW
100
10000
Peak half sinewave on-state current - (kA)
Max
Min
1000
IT
QS
tp ≥ 2ms
dI/dt
100
0.1
1.0
IRR
10
7.5
75
5.0
50
I2t
2.5
25
0
100
1
10
ms
Rate of decay of on-state current, dI/dt - (A/µs)
5
1
10
I2t value for fusing - (A2s x 106)
Total stored charge, QS - (µC)
Conditions:
IT = 3000A
VR = 500V
Tj = 125˚C
0
50
Cycles at 50Hz
Duration
Fig.10 Stored charge
Fig.11 Surge (non-repetitive) on-state current vs time
(with 50% VRRM at Tcase = 125˚C)
0.1
Anode side cooled
Thermal impedance - ˚C/W
0.01
Double side cooled
0.001
Conduction
Effective thermal resistance
Junction to case - ˚C/W
Double sided
Single sided
d.c.
0.0080
0.0160
half wave
0.0088
0.0168
3 phase 120˚
0.0090
0.0170
6 phase 60˚
0.0100
0.0180
0.0001
0.00001
0.001
0.01
0.1
Time - (s)
1.0
10
Fig.12 Maximum (limit) transient thermal impedance junction to case (˚C/W)
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DCR1596SW
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
2 holes Ø3.6x2.0 deep (in both electrodes)
Cathode
tab
Cathode
27.7
26.0
Ø120 max
Ø84.6 nom
Gate
Ø84.6 nom
Anode
Ø120 max
Nominal weight: 2600g
Clamping force: 70kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: W
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DCR1596SW
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4249-5 Issue No. 5.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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