DYNEX DNB6314

DNB63
DNB63
Rectifier Diode
Replaces January 2000 version, DS4179-5.0
DS4179-6.0 August 2001
APPLICATIONS
KEY PARAMETERS
■ Rectification
VRRM
1500V
■ Freewheel Diode
IF(AV)
5794A
IFSM
57000A
■ DC Motor Control
■ Power Supplies
■ Welding
■ Battery Chargers
FEATURES
■ Double Side Cooling
■ High Surge Capability
VOLTAGE RATINGS
Type Number
DNB63 15
DNB63 14
DNB63 13
DNB63 12
DNB63 11
Repetitive Peak
Reverse Voltage
VRRM
V
1500
1400
1300
1200
1100
Conditions
VRSM = VRRM + 100V
Outline type code: DO200AD
See Package Details for further information.
Fig. 1 Package outline
Lower voltage grades available.
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DNB63
CURRENT RATINGS
Tcase = 75oC unless otherwise stated
Symbol
Parameter
Conditions
Max.
Units
5794
A
Double Side Cooled
Half wave resistive load
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
9101
A
Continuous (direct) forward current
-
7934
A
4230
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
6645
A
Continuous (direct) forward current
-
5468
A
Conditions
Max.
Units
IF
Half wave resistive load
Tcase = 100oC unless otherwise stated
Symbol
Parameter
Double Side Cooled
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 100oC
4850
A
IF(RMS)
RMS value
Tcase = 100oC
7615
A
Continuous (direct) forward current
Tcase = 100oC
6600
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 100oC
3540
A
IF(RMS)
RMS value
Tcase = 100oC
5560
A
Continuous (direct) forward current
Tcase = 100oC
4500
A
IF
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DNB63
SURGE RATINGS
Parameter
Symbol
IFSM
I2t
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
Surge (non-repetitive) forward current
Conditions
Max.
Units
10ms half sine; Tcase = 190oC
52.0
kA
VR = 50% VRRM - 1/4 sine
13.5 x 106
A2s
10ms half sine; Tcase = 190oC
57.0
kA
VR = 0
16.2 x 106
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Min.
Max.
Units
dc
-
0.013
o
Anode dc
-
0.021
o
Cathode dc
-
0.034
o
Double side
-
0.003
o
Single side
-
0.006
o
Forward (conducting)
-
200
o
C
Reverse (blocking)
-
190
o
C
Storage temperature range
-55
190
o
C
Clamping force
40.0
48.0
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 45.0kN
with mounting compound
C/W
C/W
C/W
Virtual junction temperature
kN
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DNB63
CHARACTERISTICS
Symbol
Conditions
Parameter
Min.
Max.
Units
VFM
Forward voltage
At 3000A peak, Tcase = 25oC
-
1.05
V
IRRM
Peak reverse current
At VRRM, Tcase = 190oC
-
60
mA
QS
Total stored charge
-
4000
µC
-
600
A
-
20
µs
IF = 1000A, dIRR/dt = 50A/µs
IRM
Peak recovery current
Tcase = 175˚C, VR = 100V
trr
Reverse recovery time
VTO
rT
Threshold voltage
At Tvj = 190˚C
-
0.75
V
Slope resistance
At Tvj = 190˚C
-
0.046
mΩ
CURVES
10000
10000
Measured under pulse
conditions
6 phase
3 phase Half wave dc
8000
Mean power dissipation - (W)
Instantaneous forward current, IF - (A)
8000
6000
Tj = 190˚C
4000
6000
4000
2000
2000
0
0.5
1.0
1.5
Instantaneous forward voltage, VF - (V)
2.0
0
0
Fig.2 Maximum (limit) forward characteristics
VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF
2000
4000
6000
Mean forward current, IF(AV) - (A)
8000
Fig.3 Dissipation curves
Where
A = 0.517184
B = 0.035583
C = 4.94 x 10–5
D = –0.0011
these values are valid for Tj = 125˚C for IF 500A to 10000A
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DNB63
0.1
140
I2t = Î2 x t
Conduction
2
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
15
80
60
40
I2t
10
20
0
1
10
ms
1
2 3
5
10
20
5
50
Cycles at 50Hz
Duration
Fig.4 Surge (non-repetitive) forward current vs time (with
50% VRRM at Tcase 190˚C)
Thermal impedance - (˚C/W)
100
I2t value - (A2s x 106)
Peak half sine forward current - (kA)
120
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0130
0.0141
0.0170
0.0200
Anode side
0.0210
0.0221
0.0250
0.0280
0.01
Anode side cooled
Double side cooled
0.001
0.0001
0.001
0.01
0.1
1
Time - (s)
10
100
Fig.5 Maximum (limit) transient thermal impedance junction to case
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DNB63
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole Ø3.6 x 2.0 deep
(One in each electrode)
Cathode
Ø102 max
32.9
34.1
Ø63nom
Ø63nom
Anode
Ø92 max
Nominal weight: 1100g
Clamping force: 45kN ±10%
Package outine type code: DO200AD
Note:
1. Package maybe supplied with pins and/or tags.
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DNB63
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current
capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance
or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer
Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4179-6 Issue No. 6.0 August 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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